JPS6170718A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS6170718A
JPS6170718A JP59192874A JP19287484A JPS6170718A JP S6170718 A JPS6170718 A JP S6170718A JP 59192874 A JP59192874 A JP 59192874A JP 19287484 A JP19287484 A JP 19287484A JP S6170718 A JPS6170718 A JP S6170718A
Authority
JP
Japan
Prior art keywords
pattern
resist
negative
contrast
inverted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59192874A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0531292B2 (enExample
Inventor
Yasuhiro Takasu
高須 保弘
Yoshihiro Todokoro
義博 戸所
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP59192874A priority Critical patent/JPS6170718A/ja
Publication of JPS6170718A publication Critical patent/JPS6170718A/ja
Publication of JPH0531292B2 publication Critical patent/JPH0531292B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00

Landscapes

  • Electron Beam Exposure (AREA)
JP59192874A 1984-09-14 1984-09-14 パタ−ン形成方法 Granted JPS6170718A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59192874A JPS6170718A (ja) 1984-09-14 1984-09-14 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59192874A JPS6170718A (ja) 1984-09-14 1984-09-14 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS6170718A true JPS6170718A (ja) 1986-04-11
JPH0531292B2 JPH0531292B2 (enExample) 1993-05-12

Family

ID=16298407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59192874A Granted JPS6170718A (ja) 1984-09-14 1984-09-14 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS6170718A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100278987B1 (ko) * 1998-02-18 2001-02-01 김영환 반도체장치의제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100278987B1 (ko) * 1998-02-18 2001-02-01 김영환 반도체장치의제조방법

Also Published As

Publication number Publication date
JPH0531292B2 (enExample) 1993-05-12

Similar Documents

Publication Publication Date Title
US5955244A (en) Method for forming photoresist features having reentrant profiles using a basic agent
JPH07219237A (ja) 微細レジストパターン形成方法
EP0021719B1 (en) Method for producing negative resist images, and resist images
US5223377A (en) Interrupted developing process for a photoresist image
JPS6170718A (ja) パタ−ン形成方法
JP3118887B2 (ja) パターン形成方法
JPS5983157A (ja) ポジ型重合体レジストの感度及びコントラストを増大させる方法
JPS62175739A (ja) パタ−ン形成方法
JPS6150377B2 (enExample)
JPH05297597A (ja) レジストパターンの形成方法
JPH0954438A (ja) フォトレジストパターン及びその形成方法
JPH03253858A (ja) パターン形成材料及びパターン形成方法
JP2506637B2 (ja) パタ−ン形成方法
JPS588131B2 (ja) 半導体装置の製造方法
JP2712407B2 (ja) 2層フォトレジストを用いた微細パターンの形成方法
JPS58200534A (ja) パタ−ン形成方法
JPH0452648A (ja) レジストパターン形成方法
JPH0385544A (ja) レジストパターン形成方法
JPH032759A (ja) レジストパターンの形成方法
JPS6156867B2 (enExample)
JPS63133628A (ja) ポジ型フオトレジストの処理方法
JPH07201722A (ja) レジストパターン形成方法
JPH09236932A (ja) 微細パターン形成方法
JPH02262155A (ja) レジストパターンの形成方法
JPH0695370A (ja) レジストパターンの形成方法