JPS6164173A - 赤外線検出素子の製造方法 - Google Patents

赤外線検出素子の製造方法

Info

Publication number
JPS6164173A
JPS6164173A JP59186831A JP18683184A JPS6164173A JP S6164173 A JPS6164173 A JP S6164173A JP 59186831 A JP59186831 A JP 59186831A JP 18683184 A JP18683184 A JP 18683184A JP S6164173 A JPS6164173 A JP S6164173A
Authority
JP
Japan
Prior art keywords
conductor
crystal
manufacturing
hgcdte
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59186831A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0546708B2 (en:Method
Inventor
Toshio Yamagata
山形　敏男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59186831A priority Critical patent/JPS6164173A/ja
Publication of JPS6164173A publication Critical patent/JPS6164173A/ja
Publication of JPH0546708B2 publication Critical patent/JPH0546708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
JP59186831A 1984-09-06 1984-09-06 赤外線検出素子の製造方法 Granted JPS6164173A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59186831A JPS6164173A (ja) 1984-09-06 1984-09-06 赤外線検出素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59186831A JPS6164173A (ja) 1984-09-06 1984-09-06 赤外線検出素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6164173A true JPS6164173A (ja) 1986-04-02
JPH0546708B2 JPH0546708B2 (en:Method) 1993-07-14

Family

ID=16195376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59186831A Granted JPS6164173A (ja) 1984-09-06 1984-09-06 赤外線検出素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6164173A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08117089A (ja) * 1994-10-26 1996-05-14 Sugamo Heiwa Reien:Kk パネル祭壇

Also Published As

Publication number Publication date
JPH0546708B2 (en:Method) 1993-07-14

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