JPS6163852U - - Google Patents

Info

Publication number
JPS6163852U
JPS6163852U JP14808084U JP14808084U JPS6163852U JP S6163852 U JPS6163852 U JP S6163852U JP 14808084 U JP14808084 U JP 14808084U JP 14808084 U JP14808084 U JP 14808084U JP S6163852 U JPS6163852 U JP S6163852U
Authority
JP
Japan
Prior art keywords
conductivity type
semiconductor
semiconductor layer
pellet
opposite conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14808084U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14808084U priority Critical patent/JPS6163852U/ja
Publication of JPS6163852U publication Critical patent/JPS6163852U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の実施例を示すペレツトの要部
側断面図、第2図は本考案による半導体装置の一
部透視平面図、第3図は従来の半導体装置の一部
透視平面図、第4図は第3図半導体装置に用いら
れるペレツトの要部側断面図である。 1a……一導電型半導体サブストレート、1b
,1h……反対導電型半導体層、1i……一導電
型半導体層、2a,2b……回路素子、5……ペ
レツトマウント部、9……半導体ペレツト、10
a……受電電極、10b……電源ライン、11…
…ダイオード。
FIG. 1 is a side sectional view of a main part of a pellet showing an embodiment of the present invention, FIG. 2 is a partially transparent plan view of a semiconductor device according to the present invention, and FIG. 3 is a partially transparent plan view of a conventional semiconductor device. FIG. 4 is a sectional side view of a main part of a pellet used in the semiconductor device of FIG. 3. 1a...Semiconductor substrate of one conductivity type, 1b
, 1h...Semiconductor layer of opposite conductivity type, 1i...Semiconductor layer of one conductivity type, 2a, 2b...Circuit element, 5...Pellet mount portion, 9...Semiconductor pellet, 10
a...Power receiving electrode, 10b...Power line, 11...
…diode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一導電型半導体サブストレート上に反対導電型
半導体層を形成し、この反対導電型半導体層内に
半導体回路素子を含む複数の回路素子を形成して
配線し回路を構成した半導体ペレツトをペレツト
マウント部上にマウントした半導体装置において
上記半導体ペレツトは一導電型半導体サブストレ
ートと連続しかつ同電型の半導体層内に反対導電
型半導体層を形相すると共にこの反対導電型半導
体層内に一導電型半導体層を形成してゾイオード
を形成し、このダイオードの反対導電型半導体層
に受電電極を設けると共に、ダイオードの一導電
型半導体層を他の回路素子によつて構成された回
路の電源ラインに接続したことを特徴とする半導
体装置。
A semiconductor pellet of an opposite conductivity type is formed on a semiconductor substrate of one conductivity type, and a plurality of circuit elements including a semiconductor circuit element are formed in this semiconductor layer of an opposite conductivity type and wired to form a circuit.The semiconductor pellet is then pellet mounted. In a semiconductor device mounted on a semiconductor substrate, the semiconductor pellet is continuous with a semiconductor substrate of one conductivity type, forms a semiconductor layer of an opposite conductivity type within a semiconductor layer of the same conductivity type, and forms a semiconductor layer of one conductivity type within this semiconductor layer of an opposite conductivity type. A zoiode is formed by forming a semiconductor layer, a power receiving electrode is provided on the semiconductor layer of the opposite conductivity type of the diode, and the semiconductor layer of one conductivity type of the diode is connected to a power supply line of a circuit constituted by other circuit elements. A semiconductor device characterized by:
JP14808084U 1984-09-29 1984-09-29 Pending JPS6163852U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14808084U JPS6163852U (en) 1984-09-29 1984-09-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14808084U JPS6163852U (en) 1984-09-29 1984-09-29

Publications (1)

Publication Number Publication Date
JPS6163852U true JPS6163852U (en) 1986-04-30

Family

ID=30706300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14808084U Pending JPS6163852U (en) 1984-09-29 1984-09-29

Country Status (1)

Country Link
JP (1) JPS6163852U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158885A (en) * 1978-06-06 1979-12-15 Nec Corp Semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158885A (en) * 1978-06-06 1979-12-15 Nec Corp Semiconductor integrated circuit

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