JPS6163020A - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number
JPS6163020A
JPS6163020A JP59183728A JP18372884A JPS6163020A JP S6163020 A JPS6163020 A JP S6163020A JP 59183728 A JP59183728 A JP 59183728A JP 18372884 A JP18372884 A JP 18372884A JP S6163020 A JPS6163020 A JP S6163020A
Authority
JP
Japan
Prior art keywords
thin film
gas
substrate
forming method
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59183728A
Other languages
English (en)
Japanese (ja)
Other versions
JPH036653B2 (en:Method
Inventor
Keiji Horioka
啓治 堀岡
Tsunetoshi Arikado
経敏 有門
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59183728A priority Critical patent/JPS6163020A/ja
Publication of JPS6163020A publication Critical patent/JPS6163020A/ja
Publication of JPH036653B2 publication Critical patent/JPH036653B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • H10P14/24—
    • H10P14/271—

Landscapes

  • Formation Of Insulating Films (AREA)
JP59183728A 1984-09-04 1984-09-04 薄膜形成方法 Granted JPS6163020A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59183728A JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59183728A JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS6163020A true JPS6163020A (ja) 1986-04-01
JPH036653B2 JPH036653B2 (en:Method) 1991-01-30

Family

ID=16140923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59183728A Granted JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS6163020A (en:Method)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01181533A (ja) * 1988-01-12 1989-07-19 Toshiba Corp 半導体装置の製造方法
US4906585A (en) * 1987-08-04 1990-03-06 Siemens Aktiengesellschaft Method for manufacturing wells for CMOS transistor circuits separated by insulating trenches
US5013691A (en) * 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
JPH0697158A (ja) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd 光気相反応方法
US5427824A (en) * 1986-09-09 1995-06-27 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
US5837614A (en) * 1993-02-19 1998-11-17 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
US6013338A (en) * 1986-09-09 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
US6168980B1 (en) 1992-08-27 2001-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6261875B1 (en) 1993-03-12 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Transistor and process for fabricating the same
US6586346B1 (en) 1990-02-06 2003-07-01 Semiconductor Energy Lab Method of forming an oxide film
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5427824A (en) * 1986-09-09 1995-06-27 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
US5629245A (en) * 1986-09-09 1997-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for forming a multi-layer planarization structure
US5855970A (en) * 1986-09-09 1999-01-05 Semiconductor Energy Laboratory Co., Ltd. Method of forming a film on a substrate
US6013338A (en) * 1986-09-09 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
US4906585A (en) * 1987-08-04 1990-03-06 Siemens Aktiengesellschaft Method for manufacturing wells for CMOS transistor circuits separated by insulating trenches
JPH01181533A (ja) * 1988-01-12 1989-07-19 Toshiba Corp 半導体装置の製造方法
US5013691A (en) * 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US6586346B1 (en) 1990-02-06 2003-07-01 Semiconductor Energy Lab Method of forming an oxide film
US6960812B2 (en) 1990-02-06 2005-11-01 Semiconductor Energy Laboratory Co., Ltd. Method of forming an oxide film
US7301211B2 (en) 1990-02-06 2007-11-27 Semiconductor Energy Laboratory Co. Ltd. Method of forming an oxide film
JPH0697158A (ja) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd 光気相反応方法
US6168980B1 (en) 1992-08-27 2001-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7416907B2 (en) 1992-08-27 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6025630A (en) * 1993-02-19 2000-02-15 Semiconductor Energy Laboratory Co., Ltd. Insulating film formed using an organic silane and method of producing semiconductor device
US5866932A (en) * 1993-02-19 1999-02-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film formed using an organic silane and method of producing semiconductor device
US5837614A (en) * 1993-02-19 1998-11-17 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
US6541313B2 (en) 1993-03-12 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Transistor and process for fabricating the same
US6939749B2 (en) 1993-03-12 2005-09-06 Semiconductor Energy Laboratory Co., Ltd Method of manufacturing a semiconductor device that includes heating the gate insulating film
US6261875B1 (en) 1993-03-12 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Transistor and process for fabricating the same

Also Published As

Publication number Publication date
JPH036653B2 (en:Method) 1991-01-30

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