JPH036653B2 - - Google Patents

Info

Publication number
JPH036653B2
JPH036653B2 JP59183728A JP18372884A JPH036653B2 JP H036653 B2 JPH036653 B2 JP H036653B2 JP 59183728 A JP59183728 A JP 59183728A JP 18372884 A JP18372884 A JP 18372884A JP H036653 B2 JPH036653 B2 JP H036653B2
Authority
JP
Japan
Prior art keywords
gas
substrate
thin film
raw material
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59183728A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6163020A (ja
Inventor
Keiji Horioka
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59183728A priority Critical patent/JPS6163020A/ja
Publication of JPS6163020A publication Critical patent/JPS6163020A/ja
Publication of JPH036653B2 publication Critical patent/JPH036653B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • H10P14/24—
    • H10P14/271—

Landscapes

  • Formation Of Insulating Films (AREA)
JP59183728A 1984-09-04 1984-09-04 薄膜形成方法 Granted JPS6163020A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59183728A JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59183728A JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS6163020A JPS6163020A (ja) 1986-04-01
JPH036653B2 true JPH036653B2 (en:Method) 1991-01-30

Family

ID=16140923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59183728A Granted JPS6163020A (ja) 1984-09-04 1984-09-04 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS6163020A (en:Method)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US5427824A (en) * 1986-09-09 1995-06-27 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
US4906585A (en) * 1987-08-04 1990-03-06 Siemens Aktiengesellschaft Method for manufacturing wells for CMOS transistor circuits separated by insulating trenches
JP2883333B2 (ja) * 1988-01-12 1999-04-19 株式会社東芝 半導体装置の製造方法
US5013691A (en) * 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
DE69107101T2 (de) 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
JPH0697158A (ja) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd 光気相反応方法
CN1244891C (zh) 1992-08-27 2006-03-08 株式会社半导体能源研究所 有源矩阵显示器
KR0143873B1 (ko) * 1993-02-19 1998-08-17 순페이 야마자끼 절연막 및 반도체장치 및 반도체 장치 제조방법
US7465679B1 (en) 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
JP3637069B2 (ja) 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JPS6163020A (ja) 1986-04-01

Similar Documents

Publication Publication Date Title
US4702936A (en) Gas-phase growth process
TWI400343B (zh) A substrate processing method and a substrate processing apparatus
JPH036653B2 (en:Method)
JPS6140035B2 (en:Method)
JPS59198718A (ja) 気相法による被膜作製方法
JP2758247B2 (ja) 有機金属ガス利用薄膜形成装置
JP2895179B2 (ja) ダイヤモンド単結晶薄膜の気相合成方法
US6777347B1 (en) Method to produce porous oxide including forming a precoating oxide and a thermal oxide
JPS6355929A (ja) 半導体薄膜の製造方法
JP3534676B2 (ja) Ｃｕ又はＣｕ含有膜の形成方法、及び装置
JPS59129774A (ja) 選択的窒化膜の作製方法
JPS63317675A (ja) プラズマ気相成長装置
JP2770578B2 (ja) 光ｃｖｄ方法
KR100733771B1 (ko) 가스베리어성이 우수한 코팅 필름의 제조방법
JP2562662B2 (ja) アモルフアスシリコン膜の形成方法
JPH0118149B2 (en:Method)
JPS61119028A (ja) 光化学気相成長装置
JPH0891994A (ja) 結晶性シリコンの形成方法
TW202244986A (zh) 形成結構之方法及系統
JPH02134814A (ja) プラズマｃｖｄ法による薄膜の製造方法及びその装置
JPS59129773A (ja) 選択的酸化膜の作製方法
JPH0156525B2 (en:Method)
JPH08139025A (ja) 結晶性シリコンの形成方法
JPS61189634A (ja) 堆積膜形成法
JPH0558565B2 (en:Method)

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term