JPS6161152A - ネガ型レジストのパタ−ン形成方法 - Google Patents
ネガ型レジストのパタ−ン形成方法Info
- Publication number
- JPS6161152A JPS6161152A JP59182587A JP18258784A JPS6161152A JP S6161152 A JPS6161152 A JP S6161152A JP 59182587 A JP59182587 A JP 59182587A JP 18258784 A JP18258784 A JP 18258784A JP S6161152 A JPS6161152 A JP S6161152A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- film
- resist film
- pattern
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59182587A JPS6161152A (ja) | 1984-09-03 | 1984-09-03 | ネガ型レジストのパタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59182587A JPS6161152A (ja) | 1984-09-03 | 1984-09-03 | ネガ型レジストのパタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6161152A true JPS6161152A (ja) | 1986-03-28 |
| JPH0568692B2 JPH0568692B2 (OSRAM) | 1993-09-29 |
Family
ID=16120891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59182587A Granted JPS6161152A (ja) | 1984-09-03 | 1984-09-03 | ネガ型レジストのパタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6161152A (OSRAM) |
-
1984
- 1984-09-03 JP JP59182587A patent/JPS6161152A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0568692B2 (OSRAM) | 1993-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0045639B1 (en) | Method of forming a microscopic pattern | |
| KR920005771B1 (ko) | 광표백성 필름을 사용하는 사진평판 제조방법 | |
| JP4996667B2 (ja) | フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト | |
| US7358111B2 (en) | Imageable bottom anti-reflective coating for high resolution lithography | |
| US6420101B1 (en) | Method of reducing post-development defects in and around openings formed in photoresist by use of non-patterned exposure | |
| EP0134789A1 (en) | TWO LEVEL RESERVE SYSTEM FOR ULTRAVIOLET LIGHT FOR ENGRAVING PATTERNS ON SUBSTRATES WITH HIGH DEGREE OF REFLECTION. | |
| US4801518A (en) | Method of forming a photoresist pattern | |
| JPH1195442A (ja) | フォトレジストパターン形成方法 | |
| JPS6161152A (ja) | ネガ型レジストのパタ−ン形成方法 | |
| JPS6161153A (ja) | ネガ型レジストのパタ−ン形成方法 | |
| JPS6161151A (ja) | ネガ型レジストのパタ−ン形成方法 | |
| JPH0458170B2 (OSRAM) | ||
| JPS6048023B2 (ja) | ポジ型レジスト | |
| JPS60107644A (ja) | 現像しうる水性ネガレジスト組成物 | |
| JPS58214149A (ja) | 微細パタ−ン形成方法 | |
| JPS61241745A (ja) | ネガ型フオトレジスト組成物及びレジストパタ−ン形成方法 | |
| JPS62226148A (ja) | パタ−ン形成方法 | |
| JPH0474434B2 (OSRAM) | ||
| JPS6045246A (ja) | レジストパタ−ンの形成方法 | |
| JPH02187765A (ja) | コントラスト増強用の光脱色性層用材料およびそれを用いたパターン形成方法 | |
| JPS61131446A (ja) | レジストパタ−ン形成方法 | |
| JPS63214742A (ja) | レジストパタ−ンの形成方法 | |
| JPS625241A (ja) | フオトマスクの製造方法 | |
| JPS6230322A (ja) | フオトレジストパタ−ンの形成方法 | |
| JPH0243172B2 (OSRAM) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |