JPS6159821A - ラジカルビ−ムプロセス装置 - Google Patents
ラジカルビ−ムプロセス装置Info
- Publication number
- JPS6159821A JPS6159821A JP18039084A JP18039084A JPS6159821A JP S6159821 A JPS6159821 A JP S6159821A JP 18039084 A JP18039084 A JP 18039084A JP 18039084 A JP18039084 A JP 18039084A JP S6159821 A JPS6159821 A JP S6159821A
- Authority
- JP
- Japan
- Prior art keywords
- discharge chamber
- chamber
- discharge
- plasma
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 31
- 239000012141 concentrate Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Recrystallisation Techniques (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18039084A JPS6159821A (ja) | 1984-08-31 | 1984-08-31 | ラジカルビ−ムプロセス装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18039084A JPS6159821A (ja) | 1984-08-31 | 1984-08-31 | ラジカルビ−ムプロセス装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6159821A true JPS6159821A (ja) | 1986-03-27 |
| JPH0351291B2 JPH0351291B2 (enExample) | 1991-08-06 |
Family
ID=16082395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18039084A Granted JPS6159821A (ja) | 1984-08-31 | 1984-08-31 | ラジカルビ−ムプロセス装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6159821A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02241034A (ja) * | 1989-03-15 | 1990-09-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| JPH03232224A (ja) * | 1990-02-07 | 1991-10-16 | Mitsubishi Electric Corp | プラズマ処理装置 |
| JPH06310464A (ja) * | 1993-04-27 | 1994-11-04 | Nec Corp | 中性粒子ビームエッチング装置 |
| US5574958A (en) * | 1994-04-26 | 1996-11-12 | Nec Corporation | Hydrogen radical producing apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143981A (en) * | 1976-05-25 | 1977-11-30 | Nec Corp | Equipment for plasma depo sition |
-
1984
- 1984-08-31 JP JP18039084A patent/JPS6159821A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52143981A (en) * | 1976-05-25 | 1977-11-30 | Nec Corp | Equipment for plasma depo sition |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02241034A (ja) * | 1989-03-15 | 1990-09-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| JPH03232224A (ja) * | 1990-02-07 | 1991-10-16 | Mitsubishi Electric Corp | プラズマ処理装置 |
| JPH06310464A (ja) * | 1993-04-27 | 1994-11-04 | Nec Corp | 中性粒子ビームエッチング装置 |
| US5574958A (en) * | 1994-04-26 | 1996-11-12 | Nec Corporation | Hydrogen radical producing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0351291B2 (enExample) | 1991-08-06 |
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