JPS6159675B2 - - Google Patents

Info

Publication number
JPS6159675B2
JPS6159675B2 JP55005845A JP584580A JPS6159675B2 JP S6159675 B2 JPS6159675 B2 JP S6159675B2 JP 55005845 A JP55005845 A JP 55005845A JP 584580 A JP584580 A JP 584580A JP S6159675 B2 JPS6159675 B2 JP S6159675B2
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon nitride
gate
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55005845A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56104468A (en
Inventor
Masaki Yoshimaru
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP584580A priority Critical patent/JPS56104468A/ja
Publication of JPS56104468A publication Critical patent/JPS56104468A/ja
Publication of JPS6159675B2 publication Critical patent/JPS6159675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Element Separation (AREA)
  • Non-Volatile Memory (AREA)
JP584580A 1980-01-23 1980-01-23 Manufacture of mos semiconductor device Granted JPS56104468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP584580A JPS56104468A (en) 1980-01-23 1980-01-23 Manufacture of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP584580A JPS56104468A (en) 1980-01-23 1980-01-23 Manufacture of mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS56104468A JPS56104468A (en) 1981-08-20
JPS6159675B2 true JPS6159675B2 (enFirst) 1986-12-17

Family

ID=11622344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP584580A Granted JPS56104468A (en) 1980-01-23 1980-01-23 Manufacture of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS56104468A (enFirst)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS632778U (enFirst) * 1986-06-18 1988-01-09

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840839A (ja) * 1981-09-04 1983-03-09 Toshiba Corp 半導体装置の製造方法
JPS6473772A (en) * 1987-09-16 1989-03-20 Nec Corp Manufacture of semiconductor storage device
JPH088312B2 (ja) * 1989-03-02 1996-01-29 三菱電機株式会社 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS632778U (enFirst) * 1986-06-18 1988-01-09

Also Published As

Publication number Publication date
JPS56104468A (en) 1981-08-20

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