JPS6158972B2 - - Google Patents
Info
- Publication number
- JPS6158972B2 JPS6158972B2 JP56119313A JP11931381A JPS6158972B2 JP S6158972 B2 JPS6158972 B2 JP S6158972B2 JP 56119313 A JP56119313 A JP 56119313A JP 11931381 A JP11931381 A JP 11931381A JP S6158972 B2 JPS6158972 B2 JP S6158972B2
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- thin film
- substrate
- aln
- metal melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H10P14/203—
-
- H10P14/3202—
-
- H10P14/3416—
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56119313A JPS5821818A (ja) | 1981-07-31 | 1981-07-31 | 窒化アルミニウム薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56119313A JPS5821818A (ja) | 1981-07-31 | 1981-07-31 | 窒化アルミニウム薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821818A JPS5821818A (ja) | 1983-02-08 |
| JPS6158972B2 true JPS6158972B2 (OSRAM) | 1986-12-13 |
Family
ID=14758343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56119313A Granted JPS5821818A (ja) | 1981-07-31 | 1981-07-31 | 窒化アルミニウム薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821818A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143680A (ja) * | 1983-12-29 | 1985-07-29 | Sanyo Electric Co Ltd | Mis型発光ダイオ−ド |
| JP7106108B2 (ja) * | 2018-07-20 | 2022-07-26 | 国立大学法人東北大学 | 窒化アルミニウム結晶の製造方法 |
-
1981
- 1981-07-31 JP JP56119313A patent/JPS5821818A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821818A (ja) | 1983-02-08 |
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