JPS6156596B2 - - Google Patents

Info

Publication number
JPS6156596B2
JPS6156596B2 JP53108792A JP10879278A JPS6156596B2 JP S6156596 B2 JPS6156596 B2 JP S6156596B2 JP 53108792 A JP53108792 A JP 53108792A JP 10879278 A JP10879278 A JP 10879278A JP S6156596 B2 JPS6156596 B2 JP S6156596B2
Authority
JP
Japan
Prior art keywords
sense
transistor
potential
output node
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53108792A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5538611A (en
Inventor
Osamu Kudo
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10879278A priority Critical patent/JPS5538611A/ja
Publication of JPS5538611A publication Critical patent/JPS5538611A/ja
Publication of JPS6156596B2 publication Critical patent/JPS6156596B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
JP10879278A 1978-09-04 1978-09-04 Memory circuit Granted JPS5538611A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10879278A JPS5538611A (en) 1978-09-04 1978-09-04 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10879278A JPS5538611A (en) 1978-09-04 1978-09-04 Memory circuit

Publications (2)

Publication Number Publication Date
JPS5538611A JPS5538611A (en) 1980-03-18
JPS6156596B2 true JPS6156596B2 (cs) 1986-12-03

Family

ID=14493587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10879278A Granted JPS5538611A (en) 1978-09-04 1978-09-04 Memory circuit

Country Status (1)

Country Link
JP (1) JPS5538611A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63105900U (cs) * 1986-12-26 1988-07-08
JP2008269785A (ja) * 2008-07-04 2008-11-06 Renesas Technology Corp 半導体記憶装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370737A (en) * 1980-02-11 1983-01-25 Fairchild Camera And Instrument Corporation Sense amplifier and sensing methods
JPS5823388A (ja) * 1981-08-05 1983-02-12 Nec Corp メモリ装置
US5297097A (en) 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
JP4664392B2 (ja) * 2004-03-08 2011-04-06 富士通セミコンダクター株式会社 半導体メモリ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63105900U (cs) * 1986-12-26 1988-07-08
JP2008269785A (ja) * 2008-07-04 2008-11-06 Renesas Technology Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPS5538611A (en) 1980-03-18

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