JPS6155808B2 - - Google Patents
Info
- Publication number
- JPS6155808B2 JPS6155808B2 JP53144931A JP14493178A JPS6155808B2 JP S6155808 B2 JPS6155808 B2 JP S6155808B2 JP 53144931 A JP53144931 A JP 53144931A JP 14493178 A JP14493178 A JP 14493178A JP S6155808 B2 JPS6155808 B2 JP S6155808B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- capacitor
- current
- voltage
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 description 9
- 230000035939 shock Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/48—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
- H03K4/50—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor
- H03K4/501—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator
- H03K4/502—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor the starting point of the flyback period being determined by the amplitude of the voltage across the capacitor, e.g. by a comparator the capacitor being charged from a constant-current source
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/83—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
- H03K4/84—Generators in which the semiconductor device is conducting during the fly-back part of the cycle
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Manipulation Of Pulses (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4912677 | 1977-11-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5482956A JPS5482956A (en) | 1979-07-02 |
| JPS6155808B2 true JPS6155808B2 (US08124317-20120228-C00026.png) | 1986-11-29 |
Family
ID=10451243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14493178A Granted JPS5482956A (en) | 1977-11-25 | 1978-11-22 | Blocking oscillator |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5482956A (US08124317-20120228-C00026.png) |
| DE (1) | DE2850933C3 (US08124317-20120228-C00026.png) |
| FR (1) | FR2410396A1 (US08124317-20120228-C00026.png) |
| GB (1) | GB2008879B (US08124317-20120228-C00026.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01177505U (US08124317-20120228-C00026.png) * | 1988-05-24 | 1989-12-19 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3128715C2 (de) * | 1981-07-21 | 1984-10-11 | Telefunken electronic GmbH, 7100 Heilbronn | Schaltungsanordnung |
| GB2146502B (en) * | 1983-08-31 | 1987-07-01 | Nat Semiconductor Corp | Internal high voltage (vpp) rise control circuit |
| JP6852374B2 (ja) | 2016-12-07 | 2021-03-31 | 富士ゼロックス株式会社 | 画像処理装置及びプログラム |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5533722Y2 (US08124317-20120228-C00026.png) * | 1971-11-26 | 1980-08-11 | ||
| JPS4874772A (US08124317-20120228-C00026.png) * | 1971-12-29 | 1973-10-08 | ||
| DE2450921C3 (de) * | 1974-10-25 | 1981-10-15 | Siemens AG, 1000 Berlin und 8000 München | MOS-integrierte Schaltungsanordnung für einen Impulsgenerator |
| US3995232A (en) * | 1975-05-02 | 1976-11-30 | National Semiconductor Corporation | Integrated circuit oscillator |
| US4001722A (en) * | 1975-05-19 | 1977-01-04 | National Semiconductor Corporation | Integrated circuit relaxation oscillator |
-
1978
- 1978-10-24 GB GB7841751A patent/GB2008879B/en not_active Expired
- 1978-11-22 JP JP14493178A patent/JPS5482956A/ja active Granted
- 1978-11-24 DE DE19782850933 patent/DE2850933C3/de not_active Expired
- 1978-11-24 FR FR7833316A patent/FR2410396A1/fr active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01177505U (US08124317-20120228-C00026.png) * | 1988-05-24 | 1989-12-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2008879B (en) | 1982-05-19 |
| FR2410396B1 (US08124317-20120228-C00026.png) | 1984-01-20 |
| JPS5482956A (en) | 1979-07-02 |
| DE2850933A1 (de) | 1979-05-31 |
| DE2850933C3 (de) | 1982-01-21 |
| FR2410396A1 (fr) | 1979-06-22 |
| DE2850933B2 (de) | 1981-05-21 |
| GB2008879A (en) | 1979-06-06 |
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