JPS6155767B2 - - Google Patents
Info
- Publication number
- JPS6155767B2 JPS6155767B2 JP53130941A JP13094178A JPS6155767B2 JP S6155767 B2 JPS6155767 B2 JP S6155767B2 JP 53130941 A JP53130941 A JP 53130941A JP 13094178 A JP13094178 A JP 13094178A JP S6155767 B2 JPS6155767 B2 JP S6155767B2
- Authority
- JP
- Japan
- Prior art keywords
- resist material
- layer
- flame
- resist
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/288—Removal of non-metallic coatings, e.g. for repairing
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/856,900 US4296146A (en) | 1977-12-02 | 1977-12-02 | Method for removing resist layer from substrate with combustible gas burnoff |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54102973A JPS54102973A (en) | 1979-08-13 |
| JPS6155767B2 true JPS6155767B2 (enExample) | 1986-11-29 |
Family
ID=25324741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13094178A Granted JPS54102973A (en) | 1977-12-02 | 1978-10-24 | Method of and device for removing resist material layer |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4296146A (enExample) |
| JP (1) | JPS54102973A (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4456675A (en) * | 1983-07-26 | 1984-06-26 | International Business Machines Corporation | Dry process for forming metal patterns wherein metal is deposited on a depolymerizable polymer and selectively removed |
| US4812201A (en) * | 1986-07-25 | 1989-03-14 | Tokyo Electron Limited | Method of ashing layers, and apparatus for ashing layers |
| US4845053A (en) * | 1988-01-25 | 1989-07-04 | John Zajac | Flame ashing process for stripping photoresist |
| US4936772A (en) * | 1988-01-25 | 1990-06-26 | John Zajac | Flame ashing process and apparatus for stripping photoresist |
| US5868854A (en) * | 1989-02-27 | 1999-02-09 | Hitachi, Ltd. | Method and apparatus for processing samples |
| KR910005090B1 (en) * | 1989-06-02 | 1991-07-22 | Samsung Electronic Devices | Method of making the spacer of display device |
| JPH088255B2 (ja) * | 1990-02-20 | 1996-01-29 | 株式会社東芝 | 半導体基板表面処理方法および半導体基板表面処理装置 |
| US5651860A (en) * | 1996-03-06 | 1997-07-29 | Micron Technology, Inc. | Ion-implanted resist removal method |
| US6010949A (en) * | 1996-10-21 | 2000-01-04 | Micron Technology, Inc. | Method for removing silicon nitride in the fabrication of semiconductor devices |
| US5861064A (en) * | 1997-03-17 | 1999-01-19 | Fsi Int Inc | Process for enhanced photoresist removal in conjunction with various methods and chemistries |
| US6149828A (en) | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
| US6242165B1 (en) | 1998-08-28 | 2001-06-05 | Micron Technology, Inc. | Supercritical compositions for removal of organic material and methods of using same |
| US7270724B2 (en) | 2000-12-13 | 2007-09-18 | Uvtech Systems, Inc. | Scanning plasma reactor |
| US6773683B2 (en) * | 2001-01-08 | 2004-08-10 | Uvtech Systems, Inc. | Photocatalytic reactor system for treating flue effluents |
| US6498106B1 (en) * | 2001-04-30 | 2002-12-24 | Taiwan Semiconductor Manufacturing Company | Prevention of defects formed in photoresist during wet etching |
| US20070066076A1 (en) * | 2005-09-19 | 2007-03-22 | Bailey Joel B | Substrate processing method and apparatus using a combustion flame |
| US20070062647A1 (en) * | 2005-09-19 | 2007-03-22 | Bailey Joel B | Method and apparatus for isolative substrate edge area processing |
| US6566280B1 (en) * | 2002-08-26 | 2003-05-20 | Intel Corporation | Forming polymer features on a substrate |
| JP5057464B2 (ja) * | 2007-12-28 | 2012-10-24 | 株式会社 ハイソン | 水中燃焼による表面清浄化方法及び装置 |
| CN105223788A (zh) * | 2015-10-08 | 2016-01-06 | 济南市半导体元件实验所 | 一种高效剥离光刻胶掩膜的光刻工艺方法 |
| US10522750B2 (en) * | 2018-02-19 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM devices |
| US11213912B2 (en) * | 2018-06-25 | 2022-01-04 | Bwxt Nuclear Operations Group, Inc. | Methods and systems for monitoring a temperature of a component during a welding operation |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2845364A (en) * | 1954-03-01 | 1958-07-29 | Owens Corning Fiberglass Corp | Process for burning size from glass fabric and coating the resulting fabric |
| US2868669A (en) * | 1954-09-02 | 1959-01-13 | Owens Corning Fiberglass Corp | Method of cleaning and coating sized glass fabric |
| US2838427A (en) * | 1956-10-23 | 1958-06-10 | Int Resistance Co | Method and apparatus for flame spiralling |
| US3615956A (en) * | 1969-03-27 | 1971-10-26 | Signetics Corp | Gas plasma vapor etching process |
| US3962213A (en) * | 1974-01-23 | 1976-06-08 | Flynn John H | Method of drying coated webs |
| US3995073A (en) * | 1974-04-08 | 1976-11-30 | Trw Inc. | Method for thermal deposition of metal |
| US4341592A (en) * | 1975-08-04 | 1982-07-27 | Texas Instruments Incorporated | Method for removing photoresist layer from substrate by ozone treatment |
-
1977
- 1977-12-02 US US05/856,900 patent/US4296146A/en not_active Expired - Lifetime
-
1978
- 1978-10-24 JP JP13094178A patent/JPS54102973A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4296146A (en) | 1981-10-20 |
| JPS54102973A (en) | 1979-08-13 |
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