JPS6155263B2 - - Google Patents
Info
- Publication number
- JPS6155263B2 JPS6155263B2 JP8699280A JP8699280A JPS6155263B2 JP S6155263 B2 JPS6155263 B2 JP S6155263B2 JP 8699280 A JP8699280 A JP 8699280A JP 8699280 A JP8699280 A JP 8699280A JP S6155263 B2 JPS6155263 B2 JP S6155263B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- sio
- substrate
- film
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 44
- 238000001514 detection method Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 41
- 230000000694 effects Effects 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8699280A JPS5710980A (en) | 1980-06-23 | 1980-06-23 | Semiconductor pressure detecting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8699280A JPS5710980A (en) | 1980-06-23 | 1980-06-23 | Semiconductor pressure detecting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5710980A JPS5710980A (en) | 1982-01-20 |
JPS6155263B2 true JPS6155263B2 (de) | 1986-11-27 |
Family
ID=13902359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8699280A Granted JPS5710980A (en) | 1980-06-23 | 1980-06-23 | Semiconductor pressure detecting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5710980A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6387671A (ja) * | 1986-10-01 | 1988-04-18 | Seiko Epson Corp | 磁気記録装置 |
CN102012287A (zh) * | 2010-09-29 | 2011-04-13 | 东南大学 | 圆形硅薄膜微机电压力传感器 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6050970A (ja) * | 1983-08-31 | 1985-03-22 | Toshiba Corp | 半導体圧力変換器 |
JPS62127637A (ja) * | 1985-11-28 | 1987-06-09 | Yokogawa Electric Corp | 半導体圧力変換器 |
JP5867057B2 (ja) * | 2011-12-16 | 2016-02-24 | 株式会社豊田中央研究所 | Memsデバイス |
-
1980
- 1980-06-23 JP JP8699280A patent/JPS5710980A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6387671A (ja) * | 1986-10-01 | 1988-04-18 | Seiko Epson Corp | 磁気記録装置 |
CN102012287A (zh) * | 2010-09-29 | 2011-04-13 | 东南大学 | 圆形硅薄膜微机电压力传感器 |
Also Published As
Publication number | Publication date |
---|---|
JPS5710980A (en) | 1982-01-20 |
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