JPS6153814A - Latch circuit - Google Patents

Latch circuit

Info

Publication number
JPS6153814A
JPS6153814A JP59175675A JP17567584A JPS6153814A JP S6153814 A JPS6153814 A JP S6153814A JP 59175675 A JP59175675 A JP 59175675A JP 17567584 A JP17567584 A JP 17567584A JP S6153814 A JPS6153814 A JP S6153814A
Authority
JP
Japan
Prior art keywords
circuit
resistance
circuit element
signal
latch circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59175675A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Miyayama
芳幸 宮山
Hiroyuki Yamashita
博行 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP59175675A priority Critical patent/JPS6153814A/en
Publication of JPS6153814A publication Critical patent/JPS6153814A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Static Random-Access Memory (AREA)
  • Shift Register Type Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase the degree of integration by interposing a feedback resistance of high-resistance polysilicon between the output of the 3rd circuit element and the input of the 2nd circuit element, and writing a signal in a latch circuit by the 1st circuit element without spoiling delay characteristics. CONSTITUTION:The feedback resistance 7 uses polysilicon having about 10<5>- 10<7>OMEGA high resistance, so it is realized without requiring a large area on an IC and an about 10MOMEGA value is easily obtained. Therefore, the input resistance of the latch circuit composed of inverters 5 and 6, i.e. equivalent on resistance of the inverter 6 is about 10MOMEGA and sufficiently large. On the other hand, the equivalent on resistance when a clock signl is at H and an inverter 4 is turned on is about 1-10KOMEGA. Therefore, the ratio of resistance values of the both is about 10<6> times, so new data are written in the latch circuit without spoiling delay characteristics.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明け0−MO8トランジスタにより構成されるスタ
ティック型半導体集積回路のラッチ回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a latch circuit for a static semiconductor integrated circuit constituted by 0-MO8 transistors.

r従来の技術〕 従来のスタティック型半導体集積回路のラッチ回路は、
第1図の様にPチャンネル及びNチャンネルの絶縁ゲー
ト静電効果トランジスタ対から成るクロックドインバー
タを使った回路か、または第2図の様にトランスミツシ
ロンゲートを使った回路で、共に入力データが接続され
7′1111信号線1と、クロック信号が接続これるC
信号線2と、クロック信号の反転信号が接続される石信
号線3とを持ち、クロック信号が“H′のときに入力デ
ータがスルーL 、It HfからL1とクロック信号
が変化すると共にその時点での入力データをラッチする
回路であっ友。
rPrior art] The latch circuit of a conventional static semiconductor integrated circuit is
A circuit using a clocked inverter consisting of a pair of P-channel and N-channel insulated gate capacitive effect transistors as shown in Figure 1, or a circuit using a transmissive gate as shown in Figure 2. is connected to 7'1111 signal line 1, and C to which the clock signal is connected.
It has a signal line 2 and a stone signal line 3 to which an inverted signal of the clock signal is connected, and when the clock signal is "H', the input data is passed through L, and as the clock signal changes from Hf to L1, This is a circuit that latches input data.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、従来のスタティック型半導体集積回路のラッチ
回路は、2つのクロククドゲートと1つのインバータを
少なくとも必要とするため、そのトランジスタ数と配線
数が制限事項となっていて現回路のままではこれ以上、
工C(半導体集積回路。以下同じ)上で、回路サイズを
小ζくすることけでさないという問題点を有していた。
However, since the latch circuit of a conventional static semiconductor integrated circuit requires at least two clocked gates and one inverter, the number of transistors and the number of wires are the limitations, and if the current circuit is used, it will not be possible to use more than two clocked gates and one inverter.
There was a problem in that it was not possible to simply reduce the circuit size on a semiconductor integrated circuit (semiconductor integrated circuit, hereinafter the same).

そこで、本発明けかかる問題点を解決するもので、その
目的とするところは、従来と変わらぬラッチ動作を行な
う回路でトランジスタ数や配線数が従来よりも少なく従
ってIC上でより小さな回路サイズとなるスタティック
型半導体集積回路のラッチ回路を提供することにある。
Therefore, the present invention was developed to solve this problem, and its purpose is to provide a circuit that performs the same latch operation as the conventional one, but with fewer transistors and wires than the conventional one, and therefore a smaller circuit size on the IC. An object of the present invention is to provide a latch circuit for a static semiconductor integrated circuit.

〔問題点を解決するための手段〕[Means for solving problems]

本発明のスタティック型中導体集積回路のラッチ回路は
、制御信号によって入力信号を次段へ伝達する第1の回
路素子と、前記第1の回路素子の出力信号を入力信号と
する第2の回路素子と、前記第2の回路素子の出力信号
を入力信号とする第3の回路素子と、前記第3の回路素
子の出力信号と前記第2の回路素子の入力信号を接続す
る従来回路において、第3の回路素子を単純なインバー
タ構成とし、回路素子を簡略化すると同時に、第30回
路素子の出力と前記第2の回路素子の入力との間に、高
抵抗ポリシリコンを使ったフィードバック抵抗を挿入し
、前記第1の回路素子で本ラッチ回路への書込みを容易
にし、かつ、遅延特性をそこなうことなく、集積度を上
げることを特徴とする。
The latch circuit of the static type medium conductor integrated circuit of the present invention includes a first circuit element that transmits an input signal to the next stage in response to a control signal, and a second circuit that receives the output signal of the first circuit element as an input signal. a conventional circuit that connects an output signal of the third circuit element and an input signal of the second circuit element; The third circuit element has a simple inverter configuration to simplify the circuit element, and at the same time, a feedback resistor using high resistance polysilicon is installed between the output of the 30th circuit element and the input of the second circuit element. The present invention is characterized in that the first circuit element is inserted to facilitate writing into the latch circuit and to increase the degree of integration without impairing delay characteristics.

r作用〕 本発明の上記の構成によれば、制御信号がアクティブな
時、第1の回路素子の出力と第3の回路素子の出力が共
通に接続されているため第1の回路素子の出力において
、第1の回路素子の等価オン抵抗と第3の回路素子の等
価オン抵抗とを比較したとき、前者は、絶縁ゲート静電
効果トランジスタの等価オン抵抗に等しいので゛、約1
〜10にΩであるのに対して、後者は、シート抵抗が約
106〜107Q/口のポリシリコンを使ったフィード
バック抵抗の値にほぼ等しいので容易に10MΩ程度の
値を得ることが可能で、従って後者に対する前者   
 )の比が、はぼ106もの大ききとなる念め、新しい
入力データが、ラッチ回路に書込まれる。
r effect] According to the above configuration of the present invention, when the control signal is active, the output of the first circuit element and the output of the third circuit element are connected in common, so that the output of the first circuit element is When comparing the equivalent on-resistance of the first circuit element and the equivalent on-resistance of the third circuit element, the former is equal to the equivalent on-resistance of the insulated gate capacitive effect transistor, so it is approximately 1
~10Ω, whereas the latter has a sheet resistance approximately equal to the value of a feedback resistor using polysilicon with a sheet resistance of about 106 to 107Q/hole, so it is possible to easily obtain a value of about 10MΩ. Therefore, the former against the latter
) becomes as large as 106, new input data is written to the latch circuit.

一方、制御信号がインアクティブな場合には、第2の回
路素子と第3の回路素子と、高抵抗ポリシリコンを使っ
たフィードバック抵抗から構成されるラッチ回路が以前
のデータを保持する。
On the other hand, when the control signal is inactive, a latch circuit composed of a second circuit element, a third circuit element, and a feedback resistor using high-resistance polysilicon retains the previous data.

〔実施例−1〕 第3図は、本発明による一実施例を示すもので4が第1
の回路素子であるクロックドインバータ。
[Example-1] Figure 3 shows an example according to the present invention, where 4 is the first
A clocked inverter is a circuit element.

5が第2の回路素子であるインバータ、6が第3の回路
素子であるインバータ、そして7が高抵抗ポリシリコン
を使ったフィードバック抵抗である。
5 is an inverter which is a second circuit element, 6 is an inverter which is a third circuit element, and 7 is a feedback resistor using high resistance polysilicon.

7のフィードバック抵抗は、約10’〜10’、Q/e
+の高抵抗のポリシリコンを使うのでIC上でサイズを
とらなくて実現が可能で、約10MΩ程度の値が容易に
得られる。従って5及び6のインバータから構成される
ラッチ回路の大刀抵抗すなわち6のインバータの等価オ
ン抵抗も約10MΩと十分に大きな値がとれる。一方、
クロック信号が“H′で4のタロックドインバータがオ
ンした時の等価オン抵抗は、1〜1OKΩ程度である。
The feedback resistance of 7 is approximately 10' to 10', Q/e
Since it uses high-resistance polysilicon, it can be implemented without taking up much space on the IC, and a value of about 10 MΩ can be easily obtained. Therefore, the long resistance of the latch circuit composed of the 5 and 6 inverters, that is, the equivalent on-resistance of the 6 inverters, can take a sufficiently large value of about 10 MΩ. on the other hand,
The equivalent on-resistance when the clock signal is "H' and the four tallocked inverters are turned on is about 1 to 1 OKΩ.

従って、この両者の抵抗値の比が約10’倍もあるため
、ラッ子回路への新しいデータの書込入を遅延特性をそ
こなうことなく行なうことができる。クロック信号が”
Lfのときには、4のクロックドゲートの等価オン抵抗
は、最小で約1GΩであるので、6のインバータの等価
オン抵抗に比して今度は十分大きいため、5及び6のイ
ンバータにより構成されるラッチ回路は以前のデータを
保持することができる。
Therefore, since the ratio of these two resistance values is about 10', new data can be written into the latch circuit without damaging the delay characteristics. The clock signal is
At Lf, the equivalent on-resistance of the clocked gate 4 is at least about 1 GΩ, which is sufficiently larger than the equivalent on-resistance of the inverter 6, so the latch composed of the inverters 5 and 6 The circuit can retain previous data.

〔実施例−2〕 第4図は本発明によるラッチ回路を直列に2段接続し、
制御信号を1段目と2段目で、正反を互いに入換えてフ
リップフロップ回路を構成したもので、本発明の一実施
例となるものである。8Viマスター側のラッチ回路、
9はスレーズ側のラッチ回路である。
[Example 2] Figure 4 shows two stages of latch circuits according to the present invention connected in series,
This is an embodiment of the present invention, in which a flip-flop circuit is constructed by interchanging the control signals in the first and second stages with their polarity and inverse polarity. 8Vi master side latch circuit,
9 is a latch circuit on the slave side.

以上、本発明の実施例について述べてきたが、これに限
ることなく、第2の回路素子またta3の回路素子とし
て他にNAND回路、NOR回路、複合ゲート等も考え
られる。
Although the embodiments of the present invention have been described above, the present invention is not limited thereto, and other circuit elements such as a NAND circuit, a NOR circuit, and a composite gate can be considered as the second circuit element or the circuit element of ta3.

6一 〔発明の効果〕 以上、述べてきたように本発明によれば、従来例に比較
してトランジスタ数を少なくすることができ、従って配
線数も少なくて済み、かつ、フィードバック抵抗の大き
さも十分小ざく抑支られることから、■C上で回路サイ
ズをより小をく+ることかできるという結果となり、従
ってより高集積化が削れるという効果が得られるもので
ある。
61 [Effects of the Invention] As described above, according to the present invention, the number of transistors can be reduced compared to the conventional example, and therefore the number of wiring can be reduced, and the size of the feedback resistance can also be reduced. Since the size can be sufficiently suppressed, the circuit size can be further reduced on the C, and the effect of reducing the degree of integration can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図:t>よび第2図は従来のスタティック型半導体
記憶装置のランチ回路を示す回路図、第3図および第4
図はそれぞれ本発明のスタティック型半導体記憶装置の
ラッチ回路の実施例を示す回路図。 1・・・・・・入力信号が接続婆れるD信号線2・・・
・・・クロツタ信号が接続される0信号線3・・・・・
・クロック信号の反転信号が接続されるで信号線 7・・・・・・フィードバック抵抗 8・・・・・・マスター側ラッチ回路 9・・・・・・スレーブ側うッチ回路 以  上
Figures 1 and 2 are circuit diagrams showing the launch circuit of a conventional static semiconductor memory device, and Figures 3 and 4 are circuit diagrams showing the launch circuit of a conventional static semiconductor memory device.
Each figure is a circuit diagram showing an embodiment of a latch circuit of a static semiconductor memory device of the present invention. 1... D signal line 2 to which the input signal is connected...
...0 signal line 3 to which the Kurotsuta signal is connected...
・When the inverted signal of the clock signal is connected, the signal line 7...Feedback resistor 8...Master side latch circuit 9...Slave side catch circuit and above

Claims (1)

【特許請求の範囲】[Claims] C−MOSトランジスタにより構成される回路において
制御信号によって入力信号を次段へ伝達する第1の回路
素子と、前記第1の回路素子の出力信号を入力信号とし
、常に入力信号の反転信号を出力する第2の回路素子と
、前記第2の回路素子の出力信号を入力信号とし、常に
入力信号の反転信号を出力する第3の回路素子と、前記
第3の回路素子の出力信号と前記第2の回路素子の入力
信号を接続する高抵抗ポリシリコンを使ったフィードバ
ック抵抗とから構成されることを特徴とするスタティッ
ク型半導体集積回路のラッチ回路。
In a circuit composed of C-MOS transistors, a first circuit element transmits an input signal to the next stage by a control signal, and an output signal of the first circuit element is used as an input signal, and an inverted signal of the input signal is always output. a second circuit element that takes the output signal of the second circuit element as an input signal and always outputs an inverted signal of the input signal; 1. A latch circuit for a static semiconductor integrated circuit, comprising a feedback resistor made of high-resistance polysilicon that connects input signals of two circuit elements.
JP59175675A 1984-08-23 1984-08-23 Latch circuit Pending JPS6153814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59175675A JPS6153814A (en) 1984-08-23 1984-08-23 Latch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59175675A JPS6153814A (en) 1984-08-23 1984-08-23 Latch circuit

Publications (1)

Publication Number Publication Date
JPS6153814A true JPS6153814A (en) 1986-03-17

Family

ID=16000267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59175675A Pending JPS6153814A (en) 1984-08-23 1984-08-23 Latch circuit

Country Status (1)

Country Link
JP (1) JPS6153814A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330378A (en) * 1986-07-18 1988-02-09 工業技術院長 Ceramic sintered body for cutting tool
JPH0250397A (en) * 1988-08-12 1990-02-20 Toshiba Corp Data holding circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330378A (en) * 1986-07-18 1988-02-09 工業技術院長 Ceramic sintered body for cutting tool
JPH0471027B2 (en) * 1986-07-18 1992-11-12 Kogyo Gijutsu Incho
JPH0250397A (en) * 1988-08-12 1990-02-20 Toshiba Corp Data holding circuit

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