JPS6151436B2 - - Google Patents
Info
- Publication number
- JPS6151436B2 JPS6151436B2 JP9976277A JP9976277A JPS6151436B2 JP S6151436 B2 JPS6151436 B2 JP S6151436B2 JP 9976277 A JP9976277 A JP 9976277A JP 9976277 A JP9976277 A JP 9976277A JP S6151436 B2 JPS6151436 B2 JP S6151436B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- film
- manufacturing
- crystal semiconductor
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Weting (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9976277A JPS5432977A (en) | 1977-08-19 | 1977-08-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9976277A JPS5432977A (en) | 1977-08-19 | 1977-08-19 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5432977A JPS5432977A (en) | 1979-03-10 |
| JPS6151436B2 true JPS6151436B2 (enrdf_load_stackoverflow) | 1986-11-08 |
Family
ID=14255978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9976277A Granted JPS5432977A (en) | 1977-08-19 | 1977-08-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5432977A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240109360A (ko) * | 2023-01-04 | 2024-07-11 | 주식회사 에이치케이 | 레이저 가공기의 노즐 설치 구조 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62179026U (enrdf_load_stackoverflow) * | 1986-05-02 | 1987-11-13 |
-
1977
- 1977-08-19 JP JP9976277A patent/JPS5432977A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240109360A (ko) * | 2023-01-04 | 2024-07-11 | 주식회사 에이치케이 | 레이저 가공기의 노즐 설치 구조 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5432977A (en) | 1979-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0083785A2 (en) | Method of forming self-aligned field effect transistors in integrated circuit structures | |
| US4538166A (en) | Semiconductor memory device | |
| EP0771021A2 (en) | Transistor fabrication method | |
| US3996656A (en) | Normally off Schottky barrier field effect transistor and method of fabrication | |
| JPH0571174B2 (enrdf_load_stackoverflow) | ||
| US5723352A (en) | Process to optimize performance and reliability of MOSFET devices | |
| JPH0712058B2 (ja) | 半導体装置およびその製造方法 | |
| JPS6151436B2 (enrdf_load_stackoverflow) | ||
| JPS6360549B2 (enrdf_load_stackoverflow) | ||
| JPH06224216A (ja) | トランジスター及びその製造方法 | |
| US5759900A (en) | Method for manufacturing MOSFET | |
| KR970023872A (ko) | 모스 트랜지스터의 제조방법 | |
| JPH0552069B2 (enrdf_load_stackoverflow) | ||
| GB2038088A (en) | Semiconductor structures | |
| JPS6344767A (ja) | 電界効果型トランジスタ及びその製造方法 | |
| US3946415A (en) | Normally off schottky barrier field effect transistor and method of fabrication | |
| KR100214854B1 (ko) | 마스크 롬의 제조방법 | |
| JP2904081B2 (ja) | 半導体装置の製造方法 | |
| JP2606444B2 (ja) | 半導体装置の製造方法 | |
| KR19990050035A (ko) | 트랜지스터의 형성 방법 | |
| JPH0472770A (ja) | 半導体装置の製造方法 | |
| JP2658163B2 (ja) | Mis型半導体装置の製造方法 | |
| JPS6211516B2 (enrdf_load_stackoverflow) | ||
| JPH0824132B2 (ja) | 電界効果トランジスタの製造方法 | |
| KR920000634B1 (ko) | 모오스 트랜지스터의 제조방법 |