JPS6151436B2 - - Google Patents

Info

Publication number
JPS6151436B2
JPS6151436B2 JP9976277A JP9976277A JPS6151436B2 JP S6151436 B2 JPS6151436 B2 JP S6151436B2 JP 9976277 A JP9976277 A JP 9976277A JP 9976277 A JP9976277 A JP 9976277A JP S6151436 B2 JPS6151436 B2 JP S6151436B2
Authority
JP
Japan
Prior art keywords
single crystal
film
manufacturing
crystal semiconductor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9976277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5432977A (en
Inventor
Shinobu Fukunaga
Masahiko Yasuoka
Mikio Kyomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9976277A priority Critical patent/JPS5432977A/ja
Publication of JPS5432977A publication Critical patent/JPS5432977A/ja
Publication of JPS6151436B2 publication Critical patent/JPS6151436B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Non-Volatile Memory (AREA)
JP9976277A 1977-08-19 1977-08-19 Manufacture of semiconductor device Granted JPS5432977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9976277A JPS5432977A (en) 1977-08-19 1977-08-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9976277A JPS5432977A (en) 1977-08-19 1977-08-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5432977A JPS5432977A (en) 1979-03-10
JPS6151436B2 true JPS6151436B2 (enrdf_load_html_response) 1986-11-08

Family

ID=14255978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9976277A Granted JPS5432977A (en) 1977-08-19 1977-08-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5432977A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240109360A (ko) * 2023-01-04 2024-07-11 주식회사 에이치케이 레이저 가공기의 노즐 설치 구조

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179026U (enrdf_load_html_response) * 1986-05-02 1987-11-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240109360A (ko) * 2023-01-04 2024-07-11 주식회사 에이치케이 레이저 가공기의 노즐 설치 구조

Also Published As

Publication number Publication date
JPS5432977A (en) 1979-03-10

Similar Documents

Publication Publication Date Title
EP0083785A2 (en) Method of forming self-aligned field effect transistors in integrated circuit structures
US4538166A (en) Semiconductor memory device
EP0771021A2 (en) Transistor fabrication method
US3996656A (en) Normally off Schottky barrier field effect transistor and method of fabrication
JPH0571174B2 (enrdf_load_html_response)
US5723352A (en) Process to optimize performance and reliability of MOSFET devices
JPH0712058B2 (ja) 半導体装置およびその製造方法
JPS6151436B2 (enrdf_load_html_response)
JPS6360549B2 (enrdf_load_html_response)
JPH06224216A (ja) トランジスター及びその製造方法
US5759900A (en) Method for manufacturing MOSFET
KR970023872A (ko) 모스 트랜지스터의 제조방법
JPH0552069B2 (enrdf_load_html_response)
GB2038088A (en) Semiconductor structures
JPS6344767A (ja) 電界効果型トランジスタ及びその製造方法
US3946415A (en) Normally off schottky barrier field effect transistor and method of fabrication
KR100214854B1 (ko) 마스크 롬의 제조방법
JP2904081B2 (ja) 半導体装置の製造方法
JP2606444B2 (ja) 半導体装置の製造方法
KR19990050035A (ko) 트랜지스터의 형성 방법
JPH0472770A (ja) 半導体装置の製造方法
JP2658163B2 (ja) Ｍｉｓ型半導体装置の製造方法
JPS6211516B2 (enrdf_load_html_response)
JPH0824132B2 (ja) 電界効果トランジスタの製造方法
KR920000634B1 (ko) 모오스 트랜지스터의 제조방법