JPS6150392B2 - - Google Patents

Info

Publication number
JPS6150392B2
JPS6150392B2 JP56072090A JP7209081A JPS6150392B2 JP S6150392 B2 JPS6150392 B2 JP S6150392B2 JP 56072090 A JP56072090 A JP 56072090A JP 7209081 A JP7209081 A JP 7209081A JP S6150392 B2 JPS6150392 B2 JP S6150392B2
Authority
JP
Japan
Prior art keywords
emitter
layer
thyristor
emitter layer
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56072090A
Other languages
English (en)
Japanese (ja)
Other versions
JPS577160A (en
Inventor
Patarongu Heruberuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS577160A publication Critical patent/JPS577160A/ja
Publication of JPS6150392B2 publication Critical patent/JPS6150392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP7209081A 1980-05-14 1981-05-13 Thyristor Granted JPS577160A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803018468 DE3018468A1 (de) 1980-05-14 1980-05-14 Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb

Publications (2)

Publication Number Publication Date
JPS577160A JPS577160A (en) 1982-01-14
JPS6150392B2 true JPS6150392B2 (US07943777-20110517-C00090.png) 1986-11-04

Family

ID=6102425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7209081A Granted JPS577160A (en) 1980-05-14 1981-05-13 Thyristor

Country Status (5)

Country Link
US (1) US4454527A (US07943777-20110517-C00090.png)
EP (1) EP0039943B1 (US07943777-20110517-C00090.png)
JP (1) JPS577160A (US07943777-20110517-C00090.png)
CA (1) CA1163728A (US07943777-20110517-C00090.png)
DE (1) DE3018468A1 (US07943777-20110517-C00090.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6335400U (US07943777-20110517-C00090.png) * 1986-08-26 1988-03-07
JP2009218291A (ja) * 2008-03-07 2009-09-24 Sanken Electric Co Ltd 双方向サイリスタ

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3118291A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Triac und verfahren zu seinem betrieb
US5111268A (en) * 1981-12-16 1992-05-05 General Electric Company Semiconductor device with improved turn-off capability
IE56341B1 (en) * 1981-12-16 1991-07-03 Gen Electric Multicellular thyristor
DE3200660A1 (de) * 1982-01-12 1983-07-21 Siemens AG, 1000 Berlin und 8000 München Mis-feldeffekttransistor mit ladungstraegerinjektion
DE3224618A1 (de) * 1982-07-01 1984-01-05 Siemens AG, 1000 Berlin und 8000 München Igfet mit ladungstraegerinjektion
DE3230760A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Abschaltbarer thyristor
DE3330022A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Thyristor
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置
FR2584237B1 (fr) * 1985-06-28 1987-08-07 Telemecanique Electrique Dispositif integre mos-bipolaire normalement passant
US4760432A (en) * 1985-11-04 1988-07-26 Siemens Aktiengesellschaft Thyristor having controllable emitter-base shorts
US4717940A (en) * 1986-03-11 1988-01-05 Kabushiki Kaisha Toshiba MIS controlled gate turn-off thyristor
EP0332822A1 (de) * 1988-02-22 1989-09-20 Asea Brown Boveri Ag Feldeffektgesteuertes, bipolares Leistungshalbleiter-Bauelement sowie Verfahren zu seiner Herstellung
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
SE463235B (sv) * 1989-02-23 1990-10-22 Asea Brown Boveri Mos-faelteffekttransistorstyrd tyristor
WO1993022798A1 (en) * 1992-04-29 1993-11-11 North Carolina State University Base resistance controlled mos gated thyristor with improved turn-off characteristics
JP2796470B2 (ja) * 1992-05-06 1998-09-10 三菱電機株式会社 自己消弧型サイリスタおよびその製造方法
US8739010B2 (en) * 2010-11-19 2014-05-27 Altera Corporation Memory array with redundant bits and memory element voting circuits
CN112563325B (zh) * 2020-12-14 2022-05-13 电子科技大学 一种mos栅控晶闸管及其制造方法
CN112563326B (zh) * 2020-12-14 2022-05-17 电子科技大学 一种具有寄生二极管的mos栅控晶闸管及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2133430A1 (de) * 1971-07-05 1973-01-18 Siemens Ag Planar-vierschichtdiode
JPS5629458B2 (US07943777-20110517-C00090.png) * 1973-07-02 1981-07-08
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6335400U (US07943777-20110517-C00090.png) * 1986-08-26 1988-03-07
JP2009218291A (ja) * 2008-03-07 2009-09-24 Sanken Electric Co Ltd 双方向サイリスタ

Also Published As

Publication number Publication date
DE3018468C2 (US07943777-20110517-C00090.png) 1989-05-18
EP0039943A1 (de) 1981-11-18
CA1163728A (en) 1984-03-13
JPS577160A (en) 1982-01-14
DE3018468A1 (de) 1981-11-19
EP0039943B1 (de) 1983-06-22
US4454527A (en) 1984-06-12

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