JPS6149827B2 - - Google Patents
Info
- Publication number
- JPS6149827B2 JPS6149827B2 JP3159877A JP3159877A JPS6149827B2 JP S6149827 B2 JPS6149827 B2 JP S6149827B2 JP 3159877 A JP3159877 A JP 3159877A JP 3159877 A JP3159877 A JP 3159877A JP S6149827 B2 JPS6149827 B2 JP S6149827B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- substrate
- base
- oxide layer
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims 5
- 239000000463 material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum Chemical compound 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3159877A JPS53117742A (en) | 1977-03-24 | 1977-03-24 | Electric device board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3159877A JPS53117742A (en) | 1977-03-24 | 1977-03-24 | Electric device board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53117742A JPS53117742A (en) | 1978-10-14 |
| JPS6149827B2 true JPS6149827B2 (enrdf_load_stackoverflow) | 1986-10-31 |
Family
ID=12335623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3159877A Granted JPS53117742A (en) | 1977-03-24 | 1977-03-24 | Electric device board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53117742A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS635118U (enrdf_load_stackoverflow) * | 1986-06-27 | 1988-01-13 | ||
| JP2007511916A (ja) * | 2003-11-19 | 2007-05-10 | フリースケール セミコンダクター インコーポレイテッド | 透磁性ヒートシンクを有する半導体デバイス |
-
1977
- 1977-03-24 JP JP3159877A patent/JPS53117742A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS635118U (enrdf_load_stackoverflow) * | 1986-06-27 | 1988-01-13 | ||
| JP2007511916A (ja) * | 2003-11-19 | 2007-05-10 | フリースケール セミコンダクター インコーポレイテッド | 透磁性ヒートシンクを有する半導体デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53117742A (en) | 1978-10-14 |
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