JPS6148787B2 - - Google Patents

Info

Publication number
JPS6148787B2
JPS6148787B2 JP54023195A JP2319579A JPS6148787B2 JP S6148787 B2 JPS6148787 B2 JP S6148787B2 JP 54023195 A JP54023195 A JP 54023195A JP 2319579 A JP2319579 A JP 2319579A JP S6148787 B2 JPS6148787 B2 JP S6148787B2
Authority
JP
Japan
Prior art keywords
light guide
optical signal
light
thyristor
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54023195A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55117285A (en
Inventor
Hiromichi Oohashi
Tsuneo Tsukagoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP2319579A priority Critical patent/JPS55117285A/ja
Publication of JPS55117285A publication Critical patent/JPS55117285A/ja
Publication of JPS6148787B2 publication Critical patent/JPS6148787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Optical Couplings Of Light Guides (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP2319579A 1979-02-28 1979-02-28 Light drive semiconductor device Granted JPS55117285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2319579A JPS55117285A (en) 1979-02-28 1979-02-28 Light drive semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2319579A JPS55117285A (en) 1979-02-28 1979-02-28 Light drive semiconductor device

Publications (2)

Publication Number Publication Date
JPS55117285A JPS55117285A (en) 1980-09-09
JPS6148787B2 true JPS6148787B2 (enrdf_load_stackoverflow) 1986-10-25

Family

ID=12103879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2319579A Granted JPS55117285A (en) 1979-02-28 1979-02-28 Light drive semiconductor device

Country Status (1)

Country Link
JP (1) JPS55117285A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58157161A (ja) * 1982-03-12 1983-09-19 Toshiba Corp 光駆動型半導体装置
JPS59132165A (ja) * 1983-01-18 1984-07-30 Hitachi Ltd 半導体装置
JPS60198860A (ja) * 1984-03-23 1985-10-08 Mitsubishi Electric Corp 光半導体装置
US4757366A (en) * 1985-04-12 1988-07-12 Siemens Aktiengesellschaft Light-triggerable thyristor having low-loss feed of the trigger energy

Also Published As

Publication number Publication date
JPS55117285A (en) 1980-09-09

Similar Documents

Publication Publication Date Title
US4368481A (en) Light-driven semiconductor device
US4466009A (en) Light-activated semiconductor device with optic fiber moveable azimuthally and transversely
US5552669A (en) Deuterium gas discharge tube
US4167744A (en) Electroluminescent semiconductor device having optical fiber window
JPS6220716B2 (enrdf_load_stackoverflow)
JP6683903B1 (ja) Ｘ線発生装置およびｘ線撮像装置
US4627687A (en) Device for holding in position a transducer and an optical waveguide
US11266000B2 (en) X-ray tube device and spring pin
US3970883A (en) Arc lamp with movable electrode
JPS6148787B2 (enrdf_load_stackoverflow)
US5596210A (en) Light trigger type semiconductor device with reflection prevention film
EP0687014B1 (en) Pressure contact type semiconductor device of the light triggered type
US4257058A (en) Package for radiation triggered semiconductor device and method
US4237430A (en) Coaxial discharge sealed-off quartz laser tube
US4748369A (en) Electron gun assembly useful with traveling wave tubes
US4389662A (en) Light-activated semiconductor device
JPH0792355A (ja) 光学モジュール装置
JP3560571B2 (ja) 半導体装置
JPS5949708B2 (ja) 光半導体装置
FR2683941A1 (fr) Collecteur de faisceau d'electrons.
JPH0142508B2 (enrdf_load_stackoverflow)
US4331900A (en) Halogen incandescent lamp
JPS61120468A (ja) 光半導体装置
JPS6145394B2 (enrdf_load_stackoverflow)
JPH06216471A (ja) 光半導体装置