JPS6148776B2 - - Google Patents

Info

Publication number
JPS6148776B2
JPS6148776B2 JP53103646A JP10364678A JPS6148776B2 JP S6148776 B2 JPS6148776 B2 JP S6148776B2 JP 53103646 A JP53103646 A JP 53103646A JP 10364678 A JP10364678 A JP 10364678A JP S6148776 B2 JPS6148776 B2 JP S6148776B2
Authority
JP
Japan
Prior art keywords
pellet
ohmic contact
mounting
layer
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53103646A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5530834A (en
Inventor
Yoshuki Hayakawa
Tsutomu Koshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10364678A priority Critical patent/JPS5530834A/ja
Publication of JPS5530834A publication Critical patent/JPS5530834A/ja
Publication of JPS6148776B2 publication Critical patent/JPS6148776B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
JP10364678A 1978-08-25 1978-08-25 Method of forming ohmic contact in semiconductor pellet Granted JPS5530834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10364678A JPS5530834A (en) 1978-08-25 1978-08-25 Method of forming ohmic contact in semiconductor pellet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10364678A JPS5530834A (en) 1978-08-25 1978-08-25 Method of forming ohmic contact in semiconductor pellet

Publications (2)

Publication Number Publication Date
JPS5530834A JPS5530834A (en) 1980-03-04
JPS6148776B2 true JPS6148776B2 (cs) 1986-10-25

Family

ID=14359530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10364678A Granted JPS5530834A (en) 1978-08-25 1978-08-25 Method of forming ohmic contact in semiconductor pellet

Country Status (1)

Country Link
JP (1) JPS5530834A (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57210637A (en) * 1981-06-18 1982-12-24 Mitsubishi Electric Corp Semiconductor device
JPS58112337A (ja) * 1981-12-25 1983-07-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
EP0105324A4 (en) * 1982-04-12 1986-07-24 Motorola Inc OHMIC CONTACT FOR TYPE N. GaAs
DE3432196A1 (de) * 1984-09-01 1986-03-06 Boehringer Ingelheim International GmbH, 6507 Ingelheim Neues mechanisches aufschlussverfahren von bakterienzellen zur isolierung von rekombinant hergestellten peptiden
JPS6384125A (ja) * 1986-09-29 1988-04-14 Nec Corp 化合物半導体の電極形成法
JPH0766927B2 (ja) * 1988-11-18 1995-07-19 三洋電機株式会社 半導体ペレットと半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5530834A (en) 1980-03-04

Similar Documents

Publication Publication Date Title
US6395572B1 (en) Method of producing semiconductor light-emitting element
US4179534A (en) Gold-tin-gold ohmic contact to N-type group III-V semiconductors
US3938243A (en) Schottky barrier diode semiconductor structure and method
US5731224A (en) Method for manufacturing ohmic contacts for compound semiconductors
JP2907452B2 (ja) 化合物半導体用電極
JPS6148776B2 (cs)
JP2565655B2 (ja) 低抵抗化合物
JPH0645651A (ja) ｎ型ＳｉＣ用電極とその形成方法
JPS6024074A (ja) ヒ化ガリウム半導体デバイスおよびその製造方法
JPH0139222B2 (cs)
JP2522892B2 (ja) ＺｎＳｅ層上にオ―ム接点を設ける方法
US3468659A (en) Semiconductor contact alloy
JPS59189625A (ja) 半導体装置の製造方法
JPS5950213B2 (ja) Ｎ形砒化ガリウムのオ−ム性電極およびその形成方法
US3949120A (en) Method of making high speed silicon switching diodes
JPS6244836B2 (cs)
JPS58100455A (ja) 化合物半導体のオ−ミツク電極およびその製造方法
JPS6244837B2 (cs)
JPS6133277B2 (cs)
JPH09106959A (ja) 化合物半導体のオーム性電極及びその形成方法
JPH03152974A (ja) ショットキバリアダイオード
JPS6230710B2 (cs)
JPH06204513A (ja) 太陽電池用オーミック電極の形成方法
JPS6238850B2 (cs)
JPS6384125A (ja) 化合物半導体の電極形成法