JPS6147077U - Gallium arsenide single crystal production equipment - Google Patents

Gallium arsenide single crystal production equipment

Info

Publication number
JPS6147077U
JPS6147077U JP13346384U JP13346384U JPS6147077U JP S6147077 U JPS6147077 U JP S6147077U JP 13346384 U JP13346384 U JP 13346384U JP 13346384 U JP13346384 U JP 13346384U JP S6147077 U JPS6147077 U JP S6147077U
Authority
JP
Japan
Prior art keywords
single crystal
gallium arsenide
crystal production
quartz ampoule
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13346384U
Other languages
Japanese (ja)
Inventor
清治 水庭
渾一 中村
Original Assignee
日立電線株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立電線株式会社 filed Critical 日立電線株式会社
Priority to JP13346384U priority Critical patent/JPS6147077U/en
Publication of JPS6147077U publication Critical patent/JPS6147077U/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

図は本考案の砒化Ｍリウム単結晶製造装置の実施例の断
面図である。 １・・・石英アンプル、２・・・石英ボート、３・・・
ＧａＡＳ結晶、４・・・薄板。The figure is a sectional view of an embodiment of the Mium arsenide single crystal production apparatus of the present invention. 1...Quartz ampoule, 2...Quartz boat, 3...
GaAS crystal, 4...thin plate.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] （１）ガリウムを載置した石英ボートが一端側に内装さ
れると共ｊこ他端に砒素が載置された状態で真空封止さ
れた石英アンプルが形成され、該石英アンプルが加熱さ
れ該石英アンプル内で砒化ガリウムが合成され、かつ、
単結晶成長される装置においてζ上記石英ボートと上記
石英アンプルとの接触境界部に、該石英アンプルと該石
英ボートとの熱隔着を阻止する高温安定物質からなる薄
板が挿入されていることを特徴とする砒化ガリウム単結
晶製造装置。(1) When a quartz boat carrying gallium is placed inside one end, a vacuum-sealed quartz ampoule is formed with arsenic placed on the other end, and the quartz ampoule is heated to gallium arsenide is synthesized in a quartz ampoule, and
In the apparatus for growing a single crystal, a thin plate made of a high temperature stable material is inserted at the contact boundary between the quartz boat and the quartz ampoule to prevent thermal isolation between the quartz ampoule and the quartz boat. Features: Gallium arsenide single crystal production equipment. （２）上記薄板が、パイ口リティックボロンナイトライ
ドが形成されている実用新案登録請求の範囲第１項記載
の砒化ガリウム単結晶製造装置。 一(2) The gallium arsenide single crystal production apparatus according to claim 1, wherein the thin plate is formed of pyrolytic boron nitride. one
JP13346384U 1984-08-31 1984-08-31 Gallium arsenide single crystal production equipment Pending JPS6147077U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13346384U JPS6147077U (en) 1984-08-31 1984-08-31 Gallium arsenide single crystal production equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13346384U JPS6147077U (en) 1984-08-31 1984-08-31 Gallium arsenide single crystal production equipment

Publications (1)

Publication Number Publication Date
JPS6147077U true JPS6147077U (en) 1986-03-29

Family

ID=30692006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13346384U Pending JPS6147077U (en) 1984-08-31 1984-08-31 Gallium arsenide single crystal production equipment

Country Status (1)

Country Link
JP (1) JPS6147077U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141489A (en) * 1988-11-19 1990-05-30 Mitsubishi Monsanto Chem Co Method and apparatus for producing compound semiconductor by boat growth method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891095A (en) * 1981-11-24 1983-05-30 Hitachi Cable Ltd Production of single crystal of compound semiconductor
JPS598690A (en) * 1982-07-05 1984-01-17 Hitachi Cable Ltd Preparation of gaas single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891095A (en) * 1981-11-24 1983-05-30 Hitachi Cable Ltd Production of single crystal of compound semiconductor
JPS598690A (en) * 1982-07-05 1984-01-17 Hitachi Cable Ltd Preparation of gaas single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141489A (en) * 1988-11-19 1990-05-30 Mitsubishi Monsanto Chem Co Method and apparatus for producing compound semiconductor by boat growth method

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