JPS6146995B2 - - Google Patents
Info
- Publication number
- JPS6146995B2 JPS6146995B2 JP8785378A JP8785378A JPS6146995B2 JP S6146995 B2 JPS6146995 B2 JP S6146995B2 JP 8785378 A JP8785378 A JP 8785378A JP 8785378 A JP8785378 A JP 8785378A JP S6146995 B2 JPS6146995 B2 JP S6146995B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- layer
- thickness
- active layer
- stripe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000010355 oscillation Effects 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8785378A JPS5513991A (en) | 1978-07-18 | 1978-07-18 | Method of manufacturing semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8785378A JPS5513991A (en) | 1978-07-18 | 1978-07-18 | Method of manufacturing semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5513991A JPS5513991A (en) | 1980-01-31 |
| JPS6146995B2 true JPS6146995B2 (enrdf_load_stackoverflow) | 1986-10-16 |
Family
ID=13926435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8785378A Granted JPS5513991A (en) | 1978-07-18 | 1978-07-18 | Method of manufacturing semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513991A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60239087A (ja) * | 1985-05-02 | 1985-11-27 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置の製造方法 |
| JPS61179590A (ja) * | 1985-05-14 | 1986-08-12 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
| JP2009088425A (ja) | 2007-10-03 | 2009-04-23 | Sony Corp | 半導体レーザおよびその製造方法 |
-
1978
- 1978-07-18 JP JP8785378A patent/JPS5513991A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5513991A (en) | 1980-01-31 |