JPS6145857B2 - - Google Patents

Info

Publication number
JPS6145857B2
JPS6145857B2 JP52119191A JP11919177A JPS6145857B2 JP S6145857 B2 JPS6145857 B2 JP S6145857B2 JP 52119191 A JP52119191 A JP 52119191A JP 11919177 A JP11919177 A JP 11919177A JP S6145857 B2 JPS6145857 B2 JP S6145857B2
Authority
JP
Japan
Prior art keywords
external connection
thin metal
semiconductor element
connection
metal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52119191A
Other languages
Japanese (ja)
Other versions
JPS5452466A (en
Inventor
Toshiharu Sekine
Yoshio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11919177A priority Critical patent/JPS5452466A/en
Publication of JPS5452466A publication Critical patent/JPS5452466A/en
Publication of JPS6145857B2 publication Critical patent/JPS6145857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85191—Translational movements connecting first both on and outside the semiconductor or solid-state body, i.e. regular and reverse stitches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は半導体装置の製造方法に関し、特に組
立における金属細線の接続方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for connecting thin metal wires during assembly.

従来、半導体装置の組立において、半導体素子
と外部接線リードとの電気的接続を金属細線によ
つて行なう場合、その接続方法は常に半導体素子
より外部接続リードに行なわれていた。まれには
逆に外部接続リードから半導体素子へ行なう場合
もあつたが、いずれにしても接続する向きが一定
であつた。この方法では、接続にかかる時間とと
もに次の接続を行なう為の復帰時間が必要となり
設備能力の向上を妨げていた。 Conventionally, when assembling a semiconductor device, when electrical connection is made between a semiconductor element and an external tangential lead using a thin metal wire, the connection is always made to the external connection lead rather than the semiconductor element. In rare cases, the connection was made from the external connection lead to the semiconductor element, but in any case, the connection direction remained constant. This method requires time for connection as well as return time for the next connection, which hinders improvement in equipment capacity.

第１図は従来の半導体素子と外部接続リードと
を金属細線で接続する方法を説明する平面図であ
る。 FIG. 1 is a plan view illustrating a conventional method of connecting a semiconductor element and external connection leads using thin metal wires.

半導体素子塔載部１１に塔載された半導体素子
１２の電極部１３，１４と外部接続リード１５，
１６は金線１７でNTC接続法で接続される。こ
のときの接続方向はすべて半鎮導体素子電極から
外部接続リードへと行なわれる。金線を供給しか
つ熱圧着させるための治具（以下ツールと称す）
は半導体素子電極１３から外部接続リード１５へ
と金線１７の接続を行ない、次の接続のため１８
の経路で半導体素子電極１４の位置に戻る。この
１８の動きが設備能力向上を妨げる要因の一つと
なつていた。 The electrode parts 13 and 14 of the semiconductor element 12 mounted on the semiconductor element mounting part 11 and the external connection leads 15,
16 is connected with a gold wire 17 using the NTC connection method. At this time, all connections are made from the half-conductor element electrode to the external connection lead. A jig for supplying gold wire and thermocompression bonding (hereinafter referred to as a tool)
Connects the gold wire 17 from the semiconductor element electrode 13 to the external connection lead 15, and connects the gold wire 18 to the external connection lead 15 for the next connection.
It returns to the position of the semiconductor element electrode 14 along the route . These 18 movements were one of the factors hindering the improvement of equipment capacity.

本発明は上記欠点を除き、半導体装置製造時の
金属細線接続において、接続後の復帰時間を短か
くし、生産能率を向上させる半導体装置の製造方
法を提供するものである。 The present invention eliminates the above-mentioned drawbacks and provides a method for manufacturing a semiconductor device, which shortens the recovery time after connection and improves production efficiency in metal wire connection during semiconductor device manufacturing.

本発明は、半導体装置の半導体素子と外部接続
リードとの間を金属細線で接続する工程におい
て、少くとも接続の一部で接続方向を接続のたび
に逆方向にとることを特徴とする。 The present invention is characterized in that, in the step of connecting a semiconductor element of a semiconductor device and an external connection lead with a thin metal wire, the connection direction is reversed every time at least a part of the connection is made.

本発明を実施例により説明する。 The present invention will be explained by examples.

第２図は本発明の半導体素子と外部接続リード
とを金属細線で接続する方法の１実施例を説明す
る平面図である。 FIG. 2 is a plan view illustrating an embodiment of the method of connecting a semiconductor element and external connection leads with thin metal wires according to the present invention.

金属細線の接続は、半導体素子電極１３から外
部接続リード１５へ行なわれ、次の接続は前とは
逆に外部接続リード１６から半導体素子電極１４
へ行なわれる。このため、最初の接続と２回目の
接続の間のツールの動きは２１の如くなり、第１
図で示した従来方法でのツールの動き１８より少
ない動きで次の接続を可能ならしめる。 The connection of the thin metal wire is made from the semiconductor element electrode 13 to the external connection lead 15, and the next connection is from the external connection lead 16 to the semiconductor element electrode 14 in the opposite direction.
to be carried out. Therefore, the movement of the tool between the first connection and the second connection is as shown in 21, and the first
The next connection can be made with less tool movement 18 than in the conventional method shown in the figure.

以下この様に前回とは逆の接続方向をくりかえ
すことに依り一つの半導体装置の結線に要する時
間が短縮出来、設備能力が向上し、製品のコスト
ダウンに大きく寄与することが出来る。 Thereafter, by repeating the connection direction in the opposite direction to the previous one, the time required to connect one semiconductor device can be shortened, the equipment capacity can be improved, and this can greatly contribute to reducing the cost of the product.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の半導体素子と外部接続リードと
を金属細線で接続する方法を説明する平面図、第
２図は本発明の半導体素子と外部接続リードとを
金属細線で接続する方法の１実施例を説明する平
面図である。 １１……半導体素子塔載部、１２……半導体素
子、１３，１４……半導体素子電極、１５，１６
……外部接続リード、１７……金線、１８，２１
……ツールの動き。 FIG. 1 is a plan view illustrating a conventional method of connecting a semiconductor element and an external connection lead with a thin metal wire, and FIG. 2 is an implementation of the method of connecting a semiconductor element and an external connection lead with a thin metal wire according to the present invention. It is a top view explaining an example. 11... Semiconductor element mounting part, 12... Semiconductor element, 13, 14... Semiconductor element electrode, 15, 16
...External connection lead, 17...Gold wire, 18,21
...The movement of the tool.

Claims (1)

【特許請求の範囲】[Claims] １ 半導体素子に設けられた複数の電極と複数の
外部接続リードとをそれぞれ１本の金属細線で接
続する工程において、１対の電極および外部接続
リード間を金属細線で接続を完了した電極もしく
は外部接続リードの個所において金属細線はその
溶着部から切断されこれにより金属細線を引き出
さない状態でボンデイング治具を、前記完了した
個所が電極の場合は隣りの電極上へ前記完了した
個所が外部接続リードの場合は隣りの外部接続リ
ード上へ移動させ、しかる後に隣りの電極および
外部接続リード間の金属細線による接続を行い、
これにより、１対の電極および外部接続リード間
を接続するボンデイング治具の動きとその隣りに
位置する１対の電極および外部接続リード間を接
続するボンデイング治具の動きとはたがいに逆方
向となつていることを特徴とする半導体装置の製
造方法。1. In the process of connecting a plurality of electrodes provided on a semiconductor element and a plurality of external connection leads each with a single thin metal wire, the electrode or external At the location of the connection lead, the thin metal wire is cut from its welded part, so that the bonding jig is moved without pulling out the thin metal wire, and if the completed location is an electrode, the bonding jig is placed on the adjacent electrode so that the completed location is connected to the external connection lead. In this case, move it onto the adjacent external connection lead, then connect the adjacent electrode and external connection lead with a thin metal wire,
As a result, the movement of the bonding jig that connects a pair of electrodes and external connection leads is opposite to the movement of the bonding jig that connects a pair of electrodes and external connection leads located next to it. 1. A method for manufacturing a semiconductor device, characterized by:
JP11919177A 1977-10-03 1977-10-03 Manufacture of semiconductor device Granted JPS5452466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11919177A JPS5452466A (en) 1977-10-03 1977-10-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11919177A JPS5452466A (en) 1977-10-03 1977-10-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5452466A JPS5452466A (en) 1979-04-25
JPS6145857B2 true JPS6145857B2 (en) 1986-10-09

Family

ID=14755161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11919177A Granted JPS5452466A (en) 1977-10-03 1977-10-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5452466A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59195856A (en) * 1983-04-20 1984-11-07 Fujitsu Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5452466A (en) 1979-04-25

Similar Documents

Publication Publication Date Title
JPS6145857B2 (en)
US3429030A (en) Method of fabricating semiconductor devices
JP2875591B2 (en) Semiconductor device and manufacturing method thereof
JPS5850762A (en) Lead frame for semiconductor device
JPH02211643A (en) Semiconductor device
JPS5930538Y2 (en) semiconductor equipment
JPS58123747A (en) Manufacture of semiconductor device
JPH0625958Y2 (en) Semiconductor device
JP3112113B2 (en) Semiconductor device
JPS63278264A (en) Mosfet module
JPH0131687B2 (en)
JP3067560B2 (en) Electronic component manufacturing method
JPS633463B2 (en)
JPS6388833A (en) Tape-carrier mounting tape
JPH07161908A (en) Semiconductor device
JPH06140453A (en) Wire bonding method
JP2700434B2 (en) Semiconductor device
KR200331874Y1 (en) Multi-pin Package of Semiconductor
JPS589586B2 (en) hand tai souchi no seizou houhou
JPH09213859A (en) Manufacture of semiconductor device
JPS63215046A (en) Wedge bonding method
JPH02159752A (en) Lead frame
JPH06112247A (en) Lead frame and assembly method for semiconductor device using same
JPH03245560A (en) Lead frame
JPS60182147A (en) Wire bonding method