JPS6145388B2 - - Google Patents

Info

Publication number
JPS6145388B2
JPS6145388B2 JP16566782A JP16566782A JPS6145388B2 JP S6145388 B2 JPS6145388 B2 JP S6145388B2 JP 16566782 A JP16566782 A JP 16566782A JP 16566782 A JP16566782 A JP 16566782A JP S6145388 B2 JPS6145388 B2 JP S6145388B2
Authority
JP
Japan
Prior art keywords
fuse
wiring
cutting
ion implantation
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16566782A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5955061A (ja
Inventor
Noriaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57165667A priority Critical patent/JPS5955061A/ja
Publication of JPS5955061A publication Critical patent/JPS5955061A/ja
Publication of JPS6145388B2 publication Critical patent/JPS6145388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP57165667A 1982-09-22 1982-09-22 半導体装置の製造方法 Granted JPS5955061A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57165667A JPS5955061A (ja) 1982-09-22 1982-09-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57165667A JPS5955061A (ja) 1982-09-22 1982-09-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5955061A JPS5955061A (ja) 1984-03-29
JPS6145388B2 true JPS6145388B2 (enrdf_load_stackoverflow) 1986-10-07

Family

ID=15816724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57165667A Granted JPS5955061A (ja) 1982-09-22 1982-09-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5955061A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10344391A1 (de) * 2003-09-25 2005-05-12 Infineon Technologies Ag Anordnung zur Verbindung in integrierten MOS-Strukturen
KR100979367B1 (ko) 2008-03-19 2010-08-31 주식회사 하이닉스반도체 반도체 소자의 퓨즈 형성 방법

Also Published As

Publication number Publication date
JPS5955061A (ja) 1984-03-29

Similar Documents

Publication Publication Date Title
US4080718A (en) Method of modifying electrical characteristics of MOS devices using ion implantation
US6433404B1 (en) Electrical fuses for semiconductor devices
US7834417B2 (en) Antifuse elements
US6335228B1 (en) Method for making an anti-fuse
JPS5846174B2 (ja) 半導体集積回路
JP2003115575A (ja) 縦形ヒューズおよびダイオードに基づくワンタイムプログラマブル単位メモリセルおよびそれを用いるワンタイムプログラマブルメモリ
JPH10270566A (ja) レーザ溶断導線を有する固体回路とその固体回路の製造方法
JPH04229635A (ja) アンチヒューズを有する集積回路
JP2942576B2 (ja) フローティング・ゲート・トランジスタの製造に用いるのに適した選択的突起限定方法
US4682204A (en) Fuse element for integrated circuit memory device
JPS6344757A (ja) 半導体装置
US4342100A (en) Implant programmable metal gate MOS read only memory
JPH0222546B2 (enrdf_load_stackoverflow)
US6613617B2 (en) Cross-diffusion resistant dual-polycide semiconductor structure and method
JP2659283B2 (ja) 半導体記憶装置の製造方法
US7425472B2 (en) Semiconductor fuses and semiconductor devices containing the same
JPS6145388B2 (enrdf_load_stackoverflow)
JPS59154038A (ja) 半導体装置
US4541074A (en) Semiconductor device for memory cell
JPS6140141B2 (enrdf_load_stackoverflow)
US6190967B1 (en) Semiconductor device and manufacturing method thereof
JPS6146045A (ja) 半導体装置
JPH02864B2 (enrdf_load_stackoverflow)
US5281553A (en) Method for controlling the state of conduction of an MOS transistor of an integrated circuit
US4611237A (en) Semiconductor integrated circuit device