JPS6145376B2 - - Google Patents

Info

Publication number
JPS6145376B2
JPS6145376B2 JP56002171A JP217181A JPS6145376B2 JP S6145376 B2 JPS6145376 B2 JP S6145376B2 JP 56002171 A JP56002171 A JP 56002171A JP 217181 A JP217181 A JP 217181A JP S6145376 B2 JPS6145376 B2 JP S6145376B2
Authority
JP
Japan
Prior art keywords
pattern
ultraviolet rays
resist
irradiated
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56002171A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57115832A (en
Inventor
Yoshio Yamashita
Mitsumasa Kunishi
Takaharu Kawazu
Seigo Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56002171A priority Critical patent/JPS57115832A/ja
Publication of JPS57115832A publication Critical patent/JPS57115832A/ja
Publication of JPS6145376B2 publication Critical patent/JPS6145376B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
JP56002171A 1981-01-12 1981-01-12 Resist pattern formation for fine processing Granted JPS57115832A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56002171A JPS57115832A (en) 1981-01-12 1981-01-12 Resist pattern formation for fine processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56002171A JPS57115832A (en) 1981-01-12 1981-01-12 Resist pattern formation for fine processing

Publications (2)

Publication Number Publication Date
JPS57115832A JPS57115832A (en) 1982-07-19
JPS6145376B2 true JPS6145376B2 (Direct) 1986-10-07

Family

ID=11521911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56002171A Granted JPS57115832A (en) 1981-01-12 1981-01-12 Resist pattern formation for fine processing

Country Status (1)

Country Link
JP (1) JPS57115832A (Direct)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3038848U (ja) * 1996-12-18 1997-06-30 株式会社コバヤシ 果実用トレー

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4162756B2 (ja) * 1998-05-20 2008-10-08 富士通株式会社 膜のパターニング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3038848U (ja) * 1996-12-18 1997-06-30 株式会社コバヤシ 果実用トレー

Also Published As

Publication number Publication date
JPS57115832A (en) 1982-07-19

Similar Documents

Publication Publication Date Title
JP2919004B2 (ja) パターン形成方法
KR100632172B1 (ko) 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
EP0492256B1 (de) Photolithographische Strukturerzeugung
JPS60115222A (ja) 微細パタ−ン形成方法
KR100363700B1 (ko) 반도체소자의 미세패턴 형성방법
JPH02191957A (ja) レジスト組成物
JP3433153B2 (ja) パターン形成材料、パターン形成方法、及び露光用マスクの製造方法
JPS6145376B2 (Direct)
KR0160921B1 (ko) 레지스트 패턴의 형성방법
JPS6248211B2 (Direct)
JP2001318472A5 (Direct)
JPS5833246A (ja) ポジ型レジストのパタ−ン形成方法
JPS6160574B2 (Direct)
JPH0745593A (ja) パターン形成方法
JPH0381143B2 (Direct)
JPS61241745A (ja) ネガ型フオトレジスト組成物及びレジストパタ−ン形成方法
JPH0334054B2 (Direct)
JP2618978B2 (ja) レジスト材料およびこのレジスト材料を使用するパターン形成方法
JPH04338960A (ja) レジストパターンの形成方法
JPS58113925A (ja) 電子ビ−ム描画用レジスト
JPH0334052B2 (Direct)
JPH03269533A (ja) フォトマスクの製造方法およびそれに使用する基板
JPS62299845A (ja) ネガ型レジストパタ−ン形成方法
JPH01161336A (ja) ケイ素含有レジスト
JPH05259068A (ja) パターニング方法