JPS6142877B2 - - Google Patents

Info

Publication number
JPS6142877B2
JPS6142877B2 JP53118052A JP11805278A JPS6142877B2 JP S6142877 B2 JPS6142877 B2 JP S6142877B2 JP 53118052 A JP53118052 A JP 53118052A JP 11805278 A JP11805278 A JP 11805278A JP S6142877 B2 JPS6142877 B2 JP S6142877B2
Authority
JP
Japan
Prior art keywords
junction
diode
semiconductor layer
layer
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53118052A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5544733A (en
Inventor
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP11805278A priority Critical patent/JPS5544733A/ja
Publication of JPS5544733A publication Critical patent/JPS5544733A/ja
Publication of JPS6142877B2 publication Critical patent/JPS6142877B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP11805278A 1978-09-27 1978-09-27 Diode Granted JPS5544733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11805278A JPS5544733A (en) 1978-09-27 1978-09-27 Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11805278A JPS5544733A (en) 1978-09-27 1978-09-27 Diode

Publications (2)

Publication Number Publication Date
JPS5544733A JPS5544733A (en) 1980-03-29
JPS6142877B2 true JPS6142877B2 (enrdf_load_stackoverflow) 1986-09-24

Family

ID=14726824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11805278A Granted JPS5544733A (en) 1978-09-27 1978-09-27 Diode

Country Status (1)

Country Link
JP (1) JPS5544733A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009119248A1 (ja) * 2008-03-26 2009-10-01 日産自動車株式会社 半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES=1976 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009119248A1 (ja) * 2008-03-26 2009-10-01 日産自動車株式会社 半導体装置
US9136400B2 (en) 2008-03-26 2015-09-15 Nissan Motor Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JPS5544733A (en) 1980-03-29

Similar Documents

Publication Publication Date Title
US5789311A (en) Manufacturing method of SiC Schottky diode
EP0902981B1 (en) Schottky barrier rectifier
US5831287A (en) Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC
EP0074642B1 (en) Low-loss and high-speed diodes
JP5103382B2 (ja) アイソタイプヘテロ接合ダイオードを有する太陽電池アレイ
US20210098579A1 (en) Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layers
US20210013309A1 (en) Silicon carbide semiconductor device
USH40H (en) Field shields for Schottky barrier devices
GB1559930A (en) Temperature-compensated voltage reference diode
JPH07297373A (ja) 誘導性負荷要素に対する集積ドライバ回路装置
JPH0766433A (ja) 半導体整流素子
JP5389033B2 (ja) 半導体装置および同半導体装置の製造方法
US5298766A (en) Diamond heterojunction diode
JPH0786621A (ja) 複合ダイオード
US4727408A (en) Semiconductor device with high breakdown voltage vertical transistor and fabricating method therefor
JPH07263716A (ja) 半導体装置
JPS6142877B2 (enrdf_load_stackoverflow)
JPH07221326A (ja) プレーナ型半導体素子
JP3627572B2 (ja) ショットキバリアダイオード
EP0106044B1 (en) Space charge modulating semiconductor device and circuit comprising it
JPS5949713B2 (ja) シヨツトキバリヤダイオ−ド
JPS5866369A (ja) 半導体ダイオ−ドの製造方法
JP2754947B2 (ja) 半導体装置
US3945029A (en) Semiconductor diode with layers of different but related resistivities
KR19980021674A (ko) 제너 다이오드로 구성된 집적회로 보호소자