JPS6142794A - 半導体記憶装置のセンスアンプ系 - Google Patents

半導体記憶装置のセンスアンプ系

Info

Publication number
JPS6142794A
JPS6142794A JP59163508A JP16350884A JPS6142794A JP S6142794 A JPS6142794 A JP S6142794A JP 59163508 A JP59163508 A JP 59163508A JP 16350884 A JP16350884 A JP 16350884A JP S6142794 A JPS6142794 A JP S6142794A
Authority
JP
Japan
Prior art keywords
sense amplifier
circuit
sense
switch circuit
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59163508A
Other languages
English (en)
Japanese (ja)
Other versions
JPH041434B2 (enrdf_load_html_response
Inventor
Takayasu Sakurai
貴康 桜井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59163508A priority Critical patent/JPS6142794A/ja
Priority to KR1019850005080A priority patent/KR890004475B1/ko
Priority to EP85109699A priority patent/EP0170285B1/en
Priority to DE8585109699T priority patent/DE3582376D1/de
Priority to US06/761,709 priority patent/US4764901A/en
Publication of JPS6142794A publication Critical patent/JPS6142794A/ja
Publication of JPH041434B2 publication Critical patent/JPH041434B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
JP59163508A 1984-08-03 1984-08-03 半導体記憶装置のセンスアンプ系 Granted JPS6142794A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59163508A JPS6142794A (ja) 1984-08-03 1984-08-03 半導体記憶装置のセンスアンプ系
KR1019850005080A KR890004475B1 (ko) 1984-08-03 1985-07-16 반도체 장치
EP85109699A EP0170285B1 (en) 1984-08-03 1985-08-02 Semiconductor memory device
DE8585109699T DE3582376D1 (de) 1984-08-03 1985-08-02 Halbleiterspeicheranordnung.
US06/761,709 US4764901A (en) 1984-08-03 1985-08-02 Semiconductor memory device capable of being accessed before completion of data output

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59163508A JPS6142794A (ja) 1984-08-03 1984-08-03 半導体記憶装置のセンスアンプ系

Publications (2)

Publication Number Publication Date
JPS6142794A true JPS6142794A (ja) 1986-03-01
JPH041434B2 JPH041434B2 (enrdf_load_html_response) 1992-01-13

Family

ID=15775195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59163508A Granted JPS6142794A (ja) 1984-08-03 1984-08-03 半導体記憶装置のセンスアンプ系

Country Status (2)

Country Link
JP (1) JPS6142794A (enrdf_load_html_response)
KR (1) KR890004475B1 (enrdf_load_html_response)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298797A (ja) * 1987-05-28 1988-12-06 Nec Ic Microcomput Syst Ltd 半導体メモリ
JPH01229492A (ja) * 1988-03-10 1989-09-13 Oki Electric Ind Co Ltd 半導体メモリの制御方法
JPH01241093A (ja) * 1988-03-22 1989-09-26 Fujitsu Ltd 半導体記憶装置
JPH03142776A (ja) * 1989-10-27 1991-06-18 Nec Ic Microcomput Syst Ltd 半導体メモリ
JPH04119590A (ja) * 1990-09-10 1992-04-21 Fujitsu Ltd 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089891A (ja) * 1983-10-21 1985-05-20 Nec Corp 半導体メモリ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089891A (ja) * 1983-10-21 1985-05-20 Nec Corp 半導体メモリ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63298797A (ja) * 1987-05-28 1988-12-06 Nec Ic Microcomput Syst Ltd 半導体メモリ
JPH01229492A (ja) * 1988-03-10 1989-09-13 Oki Electric Ind Co Ltd 半導体メモリの制御方法
JPH01241093A (ja) * 1988-03-22 1989-09-26 Fujitsu Ltd 半導体記憶装置
JPH03142776A (ja) * 1989-10-27 1991-06-18 Nec Ic Microcomput Syst Ltd 半導体メモリ
JPH04119590A (ja) * 1990-09-10 1992-04-21 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
KR860002156A (ko) 1986-03-26
KR890004475B1 (ko) 1989-11-04
JPH041434B2 (enrdf_load_html_response) 1992-01-13

Similar Documents

Publication Publication Date Title
EP0129651B1 (en) Dynamic semiconductor memory having sensing amplifiers
US4758987A (en) Dynamic semiconductor memory with static data storing cell unit
US4935896A (en) Semiconductor memory device having three-transistor type memory cells structure without additional gates
US5276642A (en) Method for performing a split read/write operation in a dynamic random access memory
EP0069764B1 (en) Random access memory system having high-speed serial data paths
JP2836596B2 (ja) 連想メモリ
JPS6238590A (ja) 半導体記憶装置
KR950009389B1 (ko) 반도체기억장치
JPS60136086A (ja) 半導体記憶装置
US5418750A (en) Semiconductor memory device for suppressing noises occurring on bit and word lines
US5444652A (en) Semiconductor memory device having a memory cell unit including a plurality of transistors connected in series
JPS6374199A (ja) 半導体記憶装置
JPH041955B2 (enrdf_load_html_response)
EP0017688A1 (en) Monolithic integrated circuit
US5732026A (en) Semiconductor memory device including main/sub-bit line arrangement
KR950006962B1 (ko) 반도체 기억 장치
US5383160A (en) Dynamic random access memory
EP0166642A2 (en) Block-divided semiconductor memory device having divided bit lines
JPS6142794A (ja) 半導体記憶装置のセンスアンプ系
JPS62287498A (ja) 半導体記憶装置
EP0543613B1 (en) Dynamic semiconductor memory device
JPH01138689A (ja) 半導体記憶装置
JPS6031038B2 (ja) 半導体記憶装置
JPH0513359B2 (enrdf_load_html_response)
JPH01133285A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term