JPS6141150B2 - - Google Patents
Info
- Publication number
- JPS6141150B2 JPS6141150B2 JP5843178A JP5843178A JPS6141150B2 JP S6141150 B2 JPS6141150 B2 JP S6141150B2 JP 5843178 A JP5843178 A JP 5843178A JP 5843178 A JP5843178 A JP 5843178A JP S6141150 B2 JPS6141150 B2 JP S6141150B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- conductivity type
- impurity
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 23
- 238000005468 ion implantation Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 108091006146 Channels Proteins 0.000 description 30
- 230000010354 integration Effects 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5843178A JPS54149477A (en) | 1978-05-16 | 1978-05-16 | Production of junction type field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5843178A JPS54149477A (en) | 1978-05-16 | 1978-05-16 | Production of junction type field effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54149477A JPS54149477A (en) | 1979-11-22 |
| JPS6141150B2 true JPS6141150B2 (US20020128544A1-20020912-P00008.png) | 1986-09-12 |
Family
ID=13084185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5843178A Granted JPS54149477A (en) | 1978-05-16 | 1978-05-16 | Production of junction type field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54149477A (US20020128544A1-20020912-P00008.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS625142U (US20020128544A1-20020912-P00008.png) * | 1986-05-14 | 1987-01-13 | ||
| JPH0359938U (US20020128544A1-20020912-P00008.png) * | 1989-10-17 | 1991-06-12 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4322738A (en) * | 1980-01-21 | 1982-03-30 | Texas Instruments Incorporated | N-Channel JFET device compatible with existing bipolar integrated circuit processing techniques |
-
1978
- 1978-05-16 JP JP5843178A patent/JPS54149477A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS625142U (US20020128544A1-20020912-P00008.png) * | 1986-05-14 | 1987-01-13 | ||
| JPH0359938U (US20020128544A1-20020912-P00008.png) * | 1989-10-17 | 1991-06-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54149477A (en) | 1979-11-22 |
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