JPS6139735B2 - - Google Patents
Info
- Publication number
- JPS6139735B2 JPS6139735B2 JP56065528A JP6552881A JPS6139735B2 JP S6139735 B2 JPS6139735 B2 JP S6139735B2 JP 56065528 A JP56065528 A JP 56065528A JP 6552881 A JP6552881 A JP 6552881A JP S6139735 B2 JPS6139735 B2 JP S6139735B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- groove
- type
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56065528A JPS57180146A (en) | 1981-04-30 | 1981-04-30 | Formation of elements isolation region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56065528A JPS57180146A (en) | 1981-04-30 | 1981-04-30 | Formation of elements isolation region |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57180146A JPS57180146A (en) | 1982-11-06 |
| JPS6139735B2 true JPS6139735B2 (OSRAM) | 1986-09-05 |
Family
ID=13289597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56065528A Granted JPS57180146A (en) | 1981-04-30 | 1981-04-30 | Formation of elements isolation region |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180146A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0183842U (OSRAM) * | 1987-11-26 | 1989-06-05 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59106133A (ja) * | 1982-12-09 | 1984-06-19 | Nec Corp | 集積回路装置 |
| JPH0622274B2 (ja) * | 1983-11-02 | 1994-03-23 | 株式会社日立製作所 | 半導体集積回路装置 |
| CN116700406A (zh) * | 2023-07-07 | 2023-09-05 | 海南大学 | 智慧农业高可用性环境感知调节控制器 |
-
1981
- 1981-04-30 JP JP56065528A patent/JPS57180146A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0183842U (OSRAM) * | 1987-11-26 | 1989-06-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57180146A (en) | 1982-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4222792A (en) | Planar deep oxide isolation process utilizing resin glass and E-beam exposure | |
| US4465532A (en) | Method for forming an isolation region for electrically isolating elements | |
| JPS5913334A (ja) | 集積回路の酸化膜生成方法 | |
| US5371036A (en) | Locos technology with narrow silicon trench | |
| US4389294A (en) | Method for avoiding residue on a vertical walled mesa | |
| US4810668A (en) | Semiconductor device element-isolation by oxidation of polysilicon in trench | |
| JPH0427702B2 (OSRAM) | ||
| JPS6139735B2 (OSRAM) | ||
| JPS6355780B2 (OSRAM) | ||
| JPH05849B2 (OSRAM) | ||
| JPH01295438A (ja) | 半導体装置の製造方法 | |
| JPH0521592A (ja) | 半導体装置の製造方法及び半導体装置 | |
| JPS58190040A (ja) | 半導体装置の製造方法 | |
| JPH0467648A (ja) | 半導体装置の製造方法 | |
| JPH0215650A (ja) | 半導体装置及びその製造方法 | |
| JPS6322065B2 (OSRAM) | ||
| JPH0358179B2 (OSRAM) | ||
| JPH0278247A (ja) | 半導体装置の製造方法 | |
| JPH0370386B2 (OSRAM) | ||
| JPS6339103B2 (OSRAM) | ||
| JPS6139736B2 (OSRAM) | ||
| JPH0217931B2 (OSRAM) | ||
| JPH0464182B2 (OSRAM) | ||
| JPH0221137B2 (OSRAM) | ||
| JPS5816536A (ja) | 半導体装置の製造方法 |