JPS6138860B2 - - Google Patents

Info

Publication number
JPS6138860B2
JPS6138860B2 JP54117073A JP11707379A JPS6138860B2 JP S6138860 B2 JPS6138860 B2 JP S6138860B2 JP 54117073 A JP54117073 A JP 54117073A JP 11707379 A JP11707379 A JP 11707379A JP S6138860 B2 JPS6138860 B2 JP S6138860B2
Authority
JP
Japan
Prior art keywords
layer
pattern
polycrystalline silicon
wiring
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54117073A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5642356A (en
Inventor
Shoji Ariizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP11707379A priority Critical patent/JPS5642356A/ja
Publication of JPS5642356A publication Critical patent/JPS5642356A/ja
Publication of JPS6138860B2 publication Critical patent/JPS6138860B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/01—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP11707379A 1979-09-12 1979-09-12 Manufacture of semiconductor device Granted JPS5642356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11707379A JPS5642356A (en) 1979-09-12 1979-09-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11707379A JPS5642356A (en) 1979-09-12 1979-09-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642356A JPS5642356A (en) 1981-04-20
JPS6138860B2 true JPS6138860B2 (enExample) 1986-09-01

Family

ID=14702733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11707379A Granted JPS5642356A (en) 1979-09-12 1979-09-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642356A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0366559U (enExample) * 1989-10-30 1991-06-27

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58121648A (ja) * 1982-01-13 1983-07-20 Fujitsu Ltd 多層配線形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0366559U (enExample) * 1989-10-30 1991-06-27

Also Published As

Publication number Publication date
JPS5642356A (en) 1981-04-20

Similar Documents

Publication Publication Date Title
JPH06181262A (ja) 半導体装置の自己整合型コンタクトの製造方法
JPH0774250A (ja) コンタクトホール形成方法
JP2568036B2 (ja) 半導体装置のコンタクト形成方法
US6117792A (en) Method for manufacturing semiconductor device
JP2536413B2 (ja) 半導体集積回路装置の製造方法
JP2944903B2 (ja) 電界効果型トランジスタの製造方法
JP2952887B2 (ja) 半導体装置およびその製造方法
US5939758A (en) Semiconductor device with gate electrodes having conductive films
JPS6138860B2 (enExample)
JP2771057B2 (ja) 半導体装置の製造方法
JP2971085B2 (ja) 半導体装置の製造方法
JPH10340953A (ja) 半導体装置
JP3172229B2 (ja) 半導体装置の製造方法
JP2695812B2 (ja) 半導体装置
JPH05343669A (ja) 半導体装置およびその製造方法
JPH0945767A (ja) 半導体集積回路装置およびその製造方法
JP2993039B2 (ja) 能動層積層素子
JPH0583184B2 (enExample)
US6544852B1 (en) Method of fabricating semiconductor device
JP2641856B2 (ja) 半導体装置の製造方法
JP2828089B2 (ja) 半導体装置の製造方法
JPH088349A (ja) 半導体装置の製造方法
JPS6159664B2 (enExample)
JPH073825B2 (ja) 半導体集積回路およびその製造方法
JPH11354787A (ja) 半導体装置の製造方法