JPS6136714B2 - - Google Patents

Info

Publication number
JPS6136714B2
JPS6136714B2 JP53161339A JP16133978A JPS6136714B2 JP S6136714 B2 JPS6136714 B2 JP S6136714B2 JP 53161339 A JP53161339 A JP 53161339A JP 16133978 A JP16133978 A JP 16133978A JP S6136714 B2 JPS6136714 B2 JP S6136714B2
Authority
JP
Japan
Prior art keywords
region
epitaxial layer
layer
transistor
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53161339A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54100673A (en
Inventor
Bieeru Roje Berunaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS54100673A publication Critical patent/JPS54100673A/ja
Publication of JPS6136714B2 publication Critical patent/JPS6136714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP16133978A 1977-12-30 1978-12-28 Integrated darlington circuit Granted JPS54100673A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739796A FR2413785A1 (fr) 1977-12-30 1977-12-30 Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky

Publications (2)

Publication Number Publication Date
JPS54100673A JPS54100673A (en) 1979-08-08
JPS6136714B2 true JPS6136714B2 (enExample) 1986-08-20

Family

ID=9199556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16133978A Granted JPS54100673A (en) 1977-12-30 1978-12-28 Integrated darlington circuit

Country Status (5)

Country Link
JP (1) JPS54100673A (enExample)
CA (1) CA1123922A (enExample)
DE (1) DE2854995C2 (enExample)
FR (1) FR2413785A1 (enExample)
GB (1) GB2011713B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308957A (ja) * 1987-06-11 1988-12-16 Sanyo Electric Co Ltd ダ−リントン・トランジスタ
JP3549479B2 (ja) * 2000-10-16 2004-08-04 寛治 大塚 バラクタデバイスを備えた半導体集積回路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724659B2 (enExample) * 1974-10-31 1982-05-25
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement

Also Published As

Publication number Publication date
DE2854995A1 (de) 1979-07-05
JPS54100673A (en) 1979-08-08
CA1123922A (en) 1982-05-18
DE2854995C2 (de) 1985-06-20
FR2413785B1 (enExample) 1982-11-12
GB2011713A (en) 1979-07-11
FR2413785A1 (fr) 1979-07-27
GB2011713B (en) 1982-04-28

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