JPS6136369B2 - - Google Patents
Info
- Publication number
- JPS6136369B2 JPS6136369B2 JP9067977A JP9067977A JPS6136369B2 JP S6136369 B2 JPS6136369 B2 JP S6136369B2 JP 9067977 A JP9067977 A JP 9067977A JP 9067977 A JP9067977 A JP 9067977A JP S6136369 B2 JPS6136369 B2 JP S6136369B2
- Authority
- JP
- Japan
- Prior art keywords
- stage
- semiconductor wafer
- wafer
- wafers
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- 238000001947 vapour-phase growth Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 52
- 239000007789 gas Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9067977A JPS5425166A (en) | 1977-07-27 | 1977-07-27 | Vapor-phase growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9067977A JPS5425166A (en) | 1977-07-27 | 1977-07-27 | Vapor-phase growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5425166A JPS5425166A (en) | 1979-02-24 |
| JPS6136369B2 true JPS6136369B2 (enExample) | 1986-08-18 |
Family
ID=14005213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9067977A Granted JPS5425166A (en) | 1977-07-27 | 1977-07-27 | Vapor-phase growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5425166A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59125614A (ja) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS59125613A (ja) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1977
- 1977-07-27 JP JP9067977A patent/JPS5425166A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5425166A (en) | 1979-02-24 |
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