JPS6136342B2 - - Google Patents

Info

Publication number
JPS6136342B2
JPS6136342B2 JP4231779A JP4231779A JPS6136342B2 JP S6136342 B2 JPS6136342 B2 JP S6136342B2 JP 4231779 A JP4231779 A JP 4231779A JP 4231779 A JP4231779 A JP 4231779A JP S6136342 B2 JPS6136342 B2 JP S6136342B2
Authority
JP
Japan
Prior art keywords
deflection
electron beam
sample stage
output
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4231779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55133887A (en
Inventor
Kazumitsu Nakamura
Soichiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4231779A priority Critical patent/JPS55133887A/ja
Publication of JPS55133887A publication Critical patent/JPS55133887A/ja
Publication of JPS6136342B2 publication Critical patent/JPS6136342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
JP4231779A 1979-04-07 1979-04-07 Electron beam radiation apparatus Granted JPS55133887A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4231779A JPS55133887A (en) 1979-04-07 1979-04-07 Electron beam radiation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4231779A JPS55133887A (en) 1979-04-07 1979-04-07 Electron beam radiation apparatus

Publications (2)

Publication Number Publication Date
JPS55133887A JPS55133887A (en) 1980-10-18
JPS6136342B2 true JPS6136342B2 (de) 1986-08-18

Family

ID=12632631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4231779A Granted JPS55133887A (en) 1979-04-07 1979-04-07 Electron beam radiation apparatus

Country Status (1)

Country Link
JP (1) JPS55133887A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787131A (en) * 1980-11-20 1982-05-31 Jeol Ltd Exposing method of electron beam
JPS585955A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 動的偏向非点の補正装置
JPS60128616A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 電子線描画装置
JPS615517A (ja) * 1984-06-19 1986-01-11 Toshiba Corp 荷電ビ−ム装置の偏向歪み補正方法

Also Published As

Publication number Publication date
JPS55133887A (en) 1980-10-18

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