JPS6135708B2 - - Google Patents

Info

Publication number

JPS6135708B2

JPS6135708B2 JP52004135A JP413577A JPS6135708B2 JP S6135708 B2 JPS6135708 B2 JP S6135708B2 JP 52004135 A JP52004135 A JP 52004135A JP 413577 A JP413577 A JP 413577A JP S6135708 B2 JPS6135708 B2 JP S6135708B2

Authority

JP

Japan

Prior art keywords

forming

gate

insulating film

regions

source

Prior art date

1977-01-17

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
• 239000000758 substrate Substances 0.000 description 17
• 229910052581 Si3N4 Inorganic materials 0.000 description 16
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
• 238000000034 method Methods 0.000 description 12
• 229910052710 silicon Inorganic materials 0.000 description 12
• 239000010703 silicon Substances 0.000 description 12
• 239000012535 impurity Substances 0.000 description 10
• 229920002120 photoresistant polymer Polymers 0.000 description 9
• 238000009792 diffusion process Methods 0.000 description 8
• 238000004519 manufacturing process Methods 0.000 description 7
• 238000001259 photo etching Methods 0.000 description 7
• 239000004065 semiconductor Substances 0.000 description 6
• 230000003647 oxidation Effects 0.000 description 5
• 238000007254 oxidation reaction Methods 0.000 description 5
• 238000005530 etching Methods 0.000 description 4
• 238000005229 chemical vapour deposition Methods 0.000 description 3
• 230000010354 integration Effects 0.000 description 3
• 229910052782 aluminium Inorganic materials 0.000 description 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
• 229910052751 metal Inorganic materials 0.000 description 2
• 239000002184 metal Substances 0.000 description 2
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
• YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 description 1
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000009413 insulation Methods 0.000 description 1
• 238000005468 ion implantation Methods 0.000 description 1
• 229910052760 oxygen Inorganic materials 0.000 description 1
• 239000001301 oxygen Substances 0.000 description 1
• 230000003071 parasitic effect Effects 0.000 description 1
• 229910052698 phosphorus Inorganic materials 0.000 description 1
• 239000011574 phosphorus Substances 0.000 description 1
• 230000007261 regionalization Effects 0.000 description 1