JPS6135629B2 - - Google Patents

Info

Publication number
JPS6135629B2
JPS6135629B2 JP55058488A JP5848880A JPS6135629B2 JP S6135629 B2 JPS6135629 B2 JP S6135629B2 JP 55058488 A JP55058488 A JP 55058488A JP 5848880 A JP5848880 A JP 5848880A JP S6135629 B2 JPS6135629 B2 JP S6135629B2
Authority
JP
Japan
Prior art keywords
circuit
clear
timing
data
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55058488A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56156986A (en
Inventor
Hidetsune Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5848880A priority Critical patent/JPS56156986A/ja
Publication of JPS56156986A publication Critical patent/JPS56156986A/ja
Publication of JPS6135629B2 publication Critical patent/JPS6135629B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing

Landscapes

  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP5848880A 1980-04-30 1980-04-30 Semiconductor storage device Granted JPS56156986A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5848880A JPS56156986A (en) 1980-04-30 1980-04-30 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5848880A JPS56156986A (en) 1980-04-30 1980-04-30 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS56156986A JPS56156986A (en) 1981-12-03
JPS6135629B2 true JPS6135629B2 (enExample) 1986-08-14

Family

ID=13085809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5848880A Granted JPS56156986A (en) 1980-04-30 1980-04-30 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS56156986A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958690A (ja) * 1982-09-28 1984-04-04 Fujitsu Ltd Ｉｃメモリ
JPS63149899A (ja) * 1986-12-15 1988-06-22 Toshiba Corp 半導体メモリ
JPH0770212B2 (ja) * 1988-07-19 1995-07-31 日本電気株式会社 半導体メモリ回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105031A (enExample) * 1974-01-23 1975-08-19

Also Published As

Publication number Publication date
JPS56156986A (en) 1981-12-03

Similar Documents

Publication Publication Date Title
US4334295A (en) Memory device
US5155705A (en) Semiconductor memory device having flash write function
JP3898321B2 (ja) 半導体メモリのビットライン制御回路と前記回路を含む半導体メモリ
JPH041954B2 (enExample)
JPH05250875A (ja) 半導体記憶装置
JPH08329686A (ja) 強誘電体記憶装置
JPH0636593A (ja) 半導体記憶装置
US5463581A (en) Memory in which improvement is made as regards a precharge operation of data readout routes
JP2940845B2 (ja) 半導体記憶装置
EP0212945B1 (en) Clock signal generating circuit for dynamic type semiconductor memory device
US4439843A (en) Memory device
US4934826A (en) Block partitioned dynamic semiconductor memory device
US5392240A (en) Semiconductor memory device
JPS6135629B2 (enExample)
EP0321847B1 (en) Semiconductor memory capable of improving data rewrite speed
JPH0713861B2 (ja) 半導体記憶装置
JPH08161888A (ja) 半導体記憶装置
JP4824149B2 (ja) センスアンプを利用してテストを行うメモリ素子
JPH0628893A (ja) 半導体記憶装置
JPH0440697A (ja) 半導体記憶装置
JPH01162296A (ja) Ｄｒａｍ
JPH06103759A (ja) 半導体メモリ
JPH06349270A (ja) 半導体記憶装置
JPS6031038B2 (ja) 半導体記憶装置
JP2734522B2 (ja) 記憶装置