JPS6134932A - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPS6134932A
JPS6134932A JP15625584A JP15625584A JPS6134932A JP S6134932 A JPS6134932 A JP S6134932A JP 15625584 A JP15625584 A JP 15625584A JP 15625584 A JP15625584 A JP 15625584A JP S6134932 A JPS6134932 A JP S6134932A
Authority
JP
Japan
Prior art keywords
processed
substrate
substrates
gas
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15625584A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0520896B2 (enrdf_load_stackoverflow
Inventor
Kazumi Kasai
和美 河西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15625584A priority Critical patent/JPS6134932A/ja
Publication of JPS6134932A publication Critical patent/JPS6134932A/ja
Publication of JPH0520896B2 publication Critical patent/JPH0520896B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
JP15625584A 1984-07-26 1984-07-26 気相成長装置 Granted JPS6134932A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15625584A JPS6134932A (ja) 1984-07-26 1984-07-26 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15625584A JPS6134932A (ja) 1984-07-26 1984-07-26 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6134932A true JPS6134932A (ja) 1986-02-19
JPH0520896B2 JPH0520896B2 (enrdf_load_stackoverflow) 1993-03-22

Family

ID=15623790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15625584A Granted JPS6134932A (ja) 1984-07-26 1984-07-26 気相成長装置

Country Status (1)

Country Link
JP (1) JPS6134932A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6377614A (ja) * 1986-09-19 1988-04-07 Hitachi Ltd Ｖｔｒシリンダの嵌合装置
JPH02104928U (enrdf_load_stackoverflow) * 1989-02-09 1990-08-21
JPH02232124A (ja) * 1989-03-07 1990-09-14 Miyota Seimitsu Kk ならい治具
WO2018234611A1 (en) * 2017-06-21 2018-12-27 Picosun Oy APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558003A (en) * 1978-06-30 1980-01-21 Fujitsu Ltd Gaseous growth method and vertical type gaseous growth device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558003A (en) * 1978-06-30 1980-01-21 Fujitsu Ltd Gaseous growth method and vertical type gaseous growth device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6377614A (ja) * 1986-09-19 1988-04-07 Hitachi Ltd Ｖｔｒシリンダの嵌合装置
JPH02104928U (enrdf_load_stackoverflow) * 1989-02-09 1990-08-21
JPH02232124A (ja) * 1989-03-07 1990-09-14 Miyota Seimitsu Kk ならい治具
WO2018234611A1 (en) * 2017-06-21 2018-12-27 Picosun Oy APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
EP3642386A4 (en) * 2017-06-21 2020-07-08 Picosun Oy SUBSTRATE PROCESSING APPARATUS AND METHOD
US11505864B2 (en) 2017-06-21 2022-11-22 Picosun Oy Adjustable fluid inlet assembly for a substrate processing apparatus and method

Also Published As

Publication number Publication date
JPH0520896B2 (enrdf_load_stackoverflow) 1993-03-22

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