JPS6131638B2 - - Google Patents

Info

Publication number
JPS6131638B2
JPS6131638B2 JP8850677A JP8850677A JPS6131638B2 JP S6131638 B2 JPS6131638 B2 JP S6131638B2 JP 8850677 A JP8850677 A JP 8850677A JP 8850677 A JP8850677 A JP 8850677A JP S6131638 B2 JPS6131638 B2 JP S6131638B2
Authority
JP
Japan
Prior art keywords
film
electrode
type semiconductor
sio
shows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8850677A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5423375A (en
Inventor
Tsutomu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8850677A priority Critical patent/JPS5423375A/ja
Publication of JPS5423375A publication Critical patent/JPS5423375A/ja
Publication of JPS6131638B2 publication Critical patent/JPS6131638B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP8850677A 1977-07-22 1977-07-22 Manufacture of schottky barrier type electrode Granted JPS5423375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8850677A JPS5423375A (en) 1977-07-22 1977-07-22 Manufacture of schottky barrier type electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8850677A JPS5423375A (en) 1977-07-22 1977-07-22 Manufacture of schottky barrier type electrode

Publications (2)

Publication Number Publication Date
JPS5423375A JPS5423375A (en) 1979-02-21
JPS6131638B2 true JPS6131638B2 (en, 2012) 1986-07-21

Family

ID=13944701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8850677A Granted JPS5423375A (en) 1977-07-22 1977-07-22 Manufacture of schottky barrier type electrode

Country Status (1)

Country Link
JP (1) JPS5423375A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61103744A (ja) * 1984-10-25 1986-05-22 Osaka Kiko Co Ltd 工作機械の工具交換装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4324259B2 (ja) * 1998-07-07 2009-09-02 シャープ株式会社 液晶表示装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61103744A (ja) * 1984-10-25 1986-05-22 Osaka Kiko Co Ltd 工作機械の工具交換装置

Also Published As

Publication number Publication date
JPS5423375A (en) 1979-02-21

Similar Documents

Publication Publication Date Title
JP3976882B2 (ja) トレンチゲート構造を持つmos型半導体装置の製造方法
US5306647A (en) Method for manufacturing a solar cell from a substrate wafer
DE3014363C2 (en, 2012)
KR100438772B1 (ko) 버블 디펙트를 방지할 수 있는 반도체 소자의 제조방법
KR910007535B1 (ko) 홈상 절연막의 형성 방법
JPS58202545A (ja) 半導体装置の製造方法
JPS6131638B2 (en, 2012)
JPH0697297A (ja) コンタクトを有する半導体素子及びその製造方法
EP0312466A1 (fr) Procédé de fabrication d'une structure de silicium sur isolant
JP3175225B2 (ja) 薄膜トランジスタの製造方法
KR20000070287A (ko) 실리콘 커패시터의 제조 방법
KR930011026B1 (ko) 두개의 반도체층 사이에 삽입된 절연체를 갖는 반도체장치의 제조방법
JP3587156B2 (ja) 電界放射型電子源およびその製造方法
US6878601B1 (en) Method for fabricating a capacitor containing metastable polysilicon
JPS6156613B2 (en, 2012)
KR100456611B1 (ko) 다공질 실리콘 다이어프램에 캐리어 주입을 위한 전극구조 및 그 제조방법
JPS61107740A (ja) 半導体装置の製造方法
CN112234105A (zh) 一种半导体装置及其制造方法
JPH0730117A (ja) 薄膜トランジスタ及びその製造方法
JPS58127345A (ja) 半導体装置の製造方法
KR19980084714A (ko) 반도체소자의 분리영역 제조방법
KR100466209B1 (ko) 반도체 소자의 제조 방법
JP3539305B2 (ja) 電界放射型電子源およびその製造方法
JPH067573B2 (ja) 半導体装置及びその製造方法
JPS6210027B2 (en, 2012)