JPS6130768B2 - - Google Patents
Info
- Publication number
- JPS6130768B2 JPS6130768B2 JP53109351A JP10935178A JPS6130768B2 JP S6130768 B2 JPS6130768 B2 JP S6130768B2 JP 53109351 A JP53109351 A JP 53109351A JP 10935178 A JP10935178 A JP 10935178A JP S6130768 B2 JPS6130768 B2 JP S6130768B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- fet
- electrode
- gate electrode
- mes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10935178A JPS5535570A (en) | 1978-09-06 | 1978-09-06 | Amplifier circuit using field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10935178A JPS5535570A (en) | 1978-09-06 | 1978-09-06 | Amplifier circuit using field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5535570A JPS5535570A (en) | 1980-03-12 |
JPS6130768B2 true JPS6130768B2 (US06272168-20010807-M00014.png) | 1986-07-16 |
Family
ID=14508017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10935178A Granted JPS5535570A (en) | 1978-09-06 | 1978-09-06 | Amplifier circuit using field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5535570A (US06272168-20010807-M00014.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS647963U (US06272168-20010807-M00014.png) * | 1987-07-03 | 1989-01-17 |
-
1978
- 1978-09-06 JP JP10935178A patent/JPS5535570A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS647963U (US06272168-20010807-M00014.png) * | 1987-07-03 | 1989-01-17 |
Also Published As
Publication number | Publication date |
---|---|
JPS5535570A (en) | 1980-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4206589B2 (ja) | 分布増幅器 | |
US5633610A (en) | Monolithic microwave integrated circuit apparatus | |
US6265911B1 (en) | Sample and hold circuit having improved linearity | |
US5408198A (en) | Semiconductor power amplifier integrated circuit | |
US3480873A (en) | Gain control biasing circuits for field-effect transistors | |
KR100307789B1 (ko) | 증폭 회로 | |
JPH0376609B2 (US06272168-20010807-M00014.png) | ||
US4275359A (en) | MOS FET Amplifier | |
JPS60236306A (ja) | 高周波増幅器 | |
US4553108A (en) | Low noise feedback amplifier | |
US10931244B2 (en) | Common gate amplifier with high isolation from output to input | |
JPS6130768B2 (US06272168-20010807-M00014.png) | ||
US5459428A (en) | Switch circuit for monolithic microwave integrated circuit device | |
JP3371151B2 (ja) | モノリシックマイクロウエーブ半導体集積回路 | |
JP2747335B2 (ja) | ディジタル信号を増幅する増幅器装置 | |
JP3176793B2 (ja) | 増幅回路 | |
JP3864477B2 (ja) | 高周波回路 | |
JPS6160607B2 (US06272168-20010807-M00014.png) | ||
JPH05251959A (ja) | モノリシックマイクロ波集積回路 | |
JPH0572764B2 (US06272168-20010807-M00014.png) | ||
JP2633368B2 (ja) | マイクロ波集積回路 | |
JPS58222606A (ja) | 電子回路 | |
JPH01256205A (ja) | 半導体集積回路 | |
JPH0993058A (ja) | マイクロ波利得制御増幅器 | |
JPH0693576B2 (ja) | バイパスコンデンサ構造並びにこれを用いた電界効果トランジスタ回路およびトランジスタ回路 |