JPS61295368A - マグネトロンスパツタ用カソ−ド - Google Patents

マグネトロンスパツタ用カソ−ド

Info

Publication number
JPS61295368A
JPS61295368A JP13682185A JP13682185A JPS61295368A JP S61295368 A JPS61295368 A JP S61295368A JP 13682185 A JP13682185 A JP 13682185A JP 13682185 A JP13682185 A JP 13682185A JP S61295368 A JPS61295368 A JP S61295368A
Authority
JP
Japan
Prior art keywords
target
magnetic field
cathode
target surface
pole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13682185A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142350B2 (enrdf_load_stackoverflow
Inventor
Minoru Omoto
大本 稔
Takashi Ito
孝 伊東
Akira Odagiri
小田切 耀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINKU KIKAI KOGYO KK
Original Assignee
SHINKU KIKAI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINKU KIKAI KOGYO KK filed Critical SHINKU KIKAI KOGYO KK
Priority to JP13682185A priority Critical patent/JPS61295368A/ja
Publication of JPS61295368A publication Critical patent/JPS61295368A/ja
Publication of JPH0142350B2 publication Critical patent/JPH0142350B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
JP13682185A 1985-06-25 1985-06-25 マグネトロンスパツタ用カソ−ド Granted JPS61295368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13682185A JPS61295368A (ja) 1985-06-25 1985-06-25 マグネトロンスパツタ用カソ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13682185A JPS61295368A (ja) 1985-06-25 1985-06-25 マグネトロンスパツタ用カソ−ド

Publications (2)

Publication Number Publication Date
JPS61295368A true JPS61295368A (ja) 1986-12-26
JPH0142350B2 JPH0142350B2 (enrdf_load_stackoverflow) 1989-09-12

Family

ID=15184294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13682185A Granted JPS61295368A (ja) 1985-06-25 1985-06-25 マグネトロンスパツタ用カソ−ド

Country Status (1)

Country Link
JP (1) JPS61295368A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142764A (ja) * 1985-12-17 1987-06-26 Rohm Co Ltd マグネトロンスパツタにおける膜厚調整方法
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device
WO2007068133A1 (en) * 2005-12-13 2007-06-21 Oc Oerlikon Balzers Ag Improved sputter target utilization
CN116855909A (zh) * 2023-09-05 2023-10-10 苏州迈为科技股份有限公司 提高靶材利用率的溅射方法、溅射阴极装置及溅射设备

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142764A (ja) * 1985-12-17 1987-06-26 Rohm Co Ltd マグネトロンスパツタにおける膜厚調整方法
US5399253A (en) * 1992-12-23 1995-03-21 Balzers Aktiengesellschaft Plasma generating device
WO2007068133A1 (en) * 2005-12-13 2007-06-21 Oc Oerlikon Balzers Ag Improved sputter target utilization
US8273221B2 (en) 2005-12-13 2012-09-25 Oerlikon Solar Ag, Trubbach Sputter target utilization
CN116855909A (zh) * 2023-09-05 2023-10-10 苏州迈为科技股份有限公司 提高靶材利用率的溅射方法、溅射阴极装置及溅射设备

Also Published As

Publication number Publication date
JPH0142350B2 (enrdf_load_stackoverflow) 1989-09-12

Similar Documents

Publication Publication Date Title
EP0211412B1 (en) Planar magnetron sputtering apparatus and its magnetic source
KR100396456B1 (ko) 절단된 코니칼 스퍼터링 타겟용 고 타겟 이용 자기 장치
KR101332274B1 (ko) 스퍼터링 장치 및 스퍼터링 방법
JP2556637B2 (ja) マグネトロン陰極による基板への成膜装置
KR100262768B1 (ko) 스퍼터성막장치
AU746645B2 (en) Method and apparatus for deposition of biaxially textured coatings
EP0884761B1 (en) Sputtering apparatus with a rotating magnet array
KR960002633B1 (ko) 마그네트론 음극체
US5626727A (en) Sputtering apparatus and method
JP2020015983A (ja) スパッタリング装置
JPH0669026B2 (ja) 半導体処理装置
JP2000073167A (ja) 真空チャンバ内で基板をコ―ティングするための装置
JPS61295368A (ja) マグネトロンスパツタ用カソ−ド
JPH11158625A (ja) マグネトロンスパッタ成膜装置
JPS63317671A (ja) スパッタリング方法および装置
JPH1046334A (ja) スパッタ成膜装置
JP4219566B2 (ja) スパッタ装置
US8597479B2 (en) Sputtering system
JPH0525625A (ja) マグネトロンスパツタカソード
JPH0352535B2 (enrdf_load_stackoverflow)
JP2001032067A (ja) 成膜用磁石とそれを用いた成膜方法及びその装置
JPH10102247A (ja) スパッタリング装置及び方法
JPS6217175A (ja) スパツタリング装置
US8852412B2 (en) Magnetron source and method of manufacturing
JPS63100180A (ja) マグネトロンスパツタリング装置