JPS6129155B2 - - Google Patents

Info

Publication number
JPS6129155B2
JPS6129155B2 JP56124870A JP12487081A JPS6129155B2 JP S6129155 B2 JPS6129155 B2 JP S6129155B2 JP 56124870 A JP56124870 A JP 56124870A JP 12487081 A JP12487081 A JP 12487081A JP S6129155 B2 JPS6129155 B2 JP S6129155B2
Authority
JP
Japan
Prior art keywords
metal layer
electrode
common electrode
input
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56124870A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5756953A (en
Inventor
Shinzo Anazawa
Seiichi Ueno
Isamu Nagameguri
Tadashi Nawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56124870A priority Critical patent/JPS5756953A/ja
Publication of JPS5756953A publication Critical patent/JPS5756953A/ja
Publication of JPS6129155B2 publication Critical patent/JPS6129155B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W44/20—
    • H10W44/226—
    • H10W70/682—
    • H10W70/685—
    • H10W72/07551—
    • H10W72/50—
    • H10W72/5445—
    • H10W90/754—

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56124870A 1981-08-10 1981-08-10 Transistor Granted JPS5756953A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56124870A JPS5756953A (en) 1981-08-10 1981-08-10 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56124870A JPS5756953A (en) 1981-08-10 1981-08-10 Transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP48105715A Division JPS5910075B2 (ja) 1973-09-19 1973-09-19 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
JPS5756953A JPS5756953A (en) 1982-04-05
JPS6129155B2 true JPS6129155B2 (index.php) 1986-07-04

Family

ID=14896131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56124870A Granted JPS5756953A (en) 1981-08-10 1981-08-10 Transistor

Country Status (1)

Country Link
JP (1) JPS5756953A (index.php)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0799753B2 (ja) * 1985-11-06 1995-10-25 日本電気株式会社 混成集積回路
US4839717A (en) * 1986-12-19 1989-06-13 Fairchild Semiconductor Corporation Ceramic package for high frequency semiconductor devices
FR2629271B1 (fr) * 1988-03-25 1991-03-29 Thomson Hybrides Microondes Dispositif d'interconnexion et de protection d'une pastille nue de composant hyperfrequence
CA2096008A1 (en) * 1990-11-19 1992-05-20 Joseph M. Ommen Microelectronics package

Also Published As

Publication number Publication date
JPS5756953A (en) 1982-04-05

Similar Documents

Publication Publication Date Title
US3784883A (en) Transistor package
US3946428A (en) Encapsulation package for a semiconductor element
US3683241A (en) Radio frequency transistor package
GB2292010A (en) Ceramic package for a semiconductor device
JPS6325710B2 (index.php)
US3489956A (en) Semiconductor device container
US3753056A (en) Microwave semiconductor device
US4067040A (en) Semiconductor device
EP0015709B1 (en) Constructional arrangement for semiconductor devices
US3641398A (en) High-frequency semiconductor device
JPS6129155B2 (index.php)
JP2603310B2 (ja) 高周波集積回路用パッケージ
JP3178452B2 (ja) 半導体装置用パッケージとその実装構造
US3898594A (en) Microwave semiconductor device package
US12438057B2 (en) Semiconductor device and package
US6529105B1 (en) Process and device for bonding two millimeter elements
JP2589344B2 (ja) 高周波半導体装置
JPS6255721B2 (index.php)
US6239400B1 (en) Method and device for connecting two millimeter elements
JPH02271656A (ja) 多層化マイクロ波集積回路
JPS5910075B2 (ja) 電界効果型トランジスタ
JPH02140969A (ja) 半導体集積回路装置
JPS6236290Y2 (index.php)
JPS6035247Y2 (ja) 半導体装置
JPH07142668A (ja) リードフレームとその製造方法及び半導体装置