JPS61289623A - 気相反応装置 - Google Patents
気相反応装置Info
- Publication number
- JPS61289623A JPS61289623A JP60132216A JP13221685A JPS61289623A JP S61289623 A JPS61289623 A JP S61289623A JP 60132216 A JP60132216 A JP 60132216A JP 13221685 A JP13221685 A JP 13221685A JP S61289623 A JPS61289623 A JP S61289623A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- reaction chamber
- support plate
- gas
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60132216A JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60132216A JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61289623A true JPS61289623A (ja) | 1986-12-19 |
| JPH0544825B2 JPH0544825B2 (enrdf_load_stackoverflow) | 1993-07-07 |
Family
ID=15076101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60132216A Granted JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61289623A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179525A (ja) * | 1987-01-21 | 1988-07-23 | Tokyo Electron Ltd | アッシング装置 |
| US5711811A (en) * | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
| US5855680A (en) * | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
| US5997651A (en) * | 1995-10-18 | 1999-12-07 | Tokyo Electron Limited | Heat treatment apparatus |
| US6015590A (en) * | 1994-11-28 | 2000-01-18 | Neste Oy | Method for growing thin films |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113420A (ja) * | 1983-11-22 | 1985-06-19 | Mitsubishi Electric Corp | 半導体結晶の製造装置 |
| JPS60178621A (ja) * | 1984-02-24 | 1985-09-12 | Toshiba Corp | 薄膜形成装置 |
-
1985
- 1985-06-18 JP JP60132216A patent/JPS61289623A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113420A (ja) * | 1983-11-22 | 1985-06-19 | Mitsubishi Electric Corp | 半導体結晶の製造装置 |
| JPS60178621A (ja) * | 1984-02-24 | 1985-09-12 | Toshiba Corp | 薄膜形成装置 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179525A (ja) * | 1987-01-21 | 1988-07-23 | Tokyo Electron Ltd | アッシング装置 |
| US5711811A (en) * | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
| US5855680A (en) * | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
| US6015590A (en) * | 1994-11-28 | 2000-01-18 | Neste Oy | Method for growing thin films |
| US6572705B1 (en) | 1994-11-28 | 2003-06-03 | Asm America, Inc. | Method and apparatus for growing thin films |
| US7404984B2 (en) | 1994-11-28 | 2008-07-29 | Asm America, Inc. | Method for growing thin films |
| US7498059B2 (en) | 1994-11-28 | 2009-03-03 | Asm America, Inc. | Method for growing thin films |
| US8507039B2 (en) | 1994-11-28 | 2013-08-13 | Asm America, Inc. | Method for growing thin films |
| US5997651A (en) * | 1995-10-18 | 1999-12-07 | Tokyo Electron Limited | Heat treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0544825B2 (enrdf_load_stackoverflow) | 1993-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3581388B2 (ja) | 均一性が向上した堆積ポリシリコン膜と、そのための装置 | |
| US6254686B1 (en) | Vented lower liner for heating exhaust gas from a single substrate reactor | |
| JPH05243166A (ja) | 半導体基板の気相成長装置 | |
| EP0728850B1 (en) | Quasi hot wall reaction chamber | |
| JPS61289623A (ja) | 気相反応装置 | |
| JPS5936927A (ja) | 半導体気相成長装置 | |
| JP2697250B2 (ja) | 熱cvd装置 | |
| JPS622525A (ja) | 気相反応装置 | |
| JPS60189927A (ja) | 気相反応容器 | |
| JP3046446B2 (ja) | 半導体製造装置 | |
| US4719122A (en) | CVD method and apparatus for forming a film | |
| JPH01280323A (ja) | 気相エピタキシャル成長装置 | |
| JPS6050918A (ja) | 半導体処理装置 | |
| JPH0626182B2 (ja) | 赤外線加熱装置 | |
| JPS62101021A (ja) | 半導体製造装置 | |
| JPS60189924A (ja) | 気相反応容器 | |
| JPS6298613A (ja) | 気相成長装置 | |
| JPS62126628A (ja) | 半導体装置の製造方法 | |
| JPS622524A (ja) | 気相成長装置 | |
| JPS62154616A (ja) | 気相成長装置 | |
| JPS62208624A (ja) | 気相成長装置 | |
| JPS62244123A (ja) | 気相成長装置 | |
| JPS6252921A (ja) | 光励起膜形成装置 | |
| JPS60253212A (ja) | 気相成長装置 | |
| JPS62154617A (ja) | 気相成長装置 |