JPS61289623A - 気相反応装置 - Google Patents
気相反応装置Info
- Publication number
- JPS61289623A JPS61289623A JP13221685A JP13221685A JPS61289623A JP S61289623 A JPS61289623 A JP S61289623A JP 13221685 A JP13221685 A JP 13221685A JP 13221685 A JP13221685 A JP 13221685A JP S61289623 A JPS61289623 A JP S61289623A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- reaction chamber
- support plate
- film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 44
- 239000012808 vapor phase Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000010574 gas phase reaction Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 239000010453 quartz Substances 0.000 abstract description 18
- 239000012495 reaction gas Substances 0.000 abstract description 16
- 239000010408 film Substances 0.000 abstract description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 32
- 239000012071 phase Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13221685A JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13221685A JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61289623A true JPS61289623A (ja) | 1986-12-19 |
| JPH0544825B2 JPH0544825B2 (enrdf_load_stackoverflow) | 1993-07-07 |
Family
ID=15076101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13221685A Granted JPS61289623A (ja) | 1985-06-18 | 1985-06-18 | 気相反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61289623A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179525A (ja) * | 1987-01-21 | 1988-07-23 | Tokyo Electron Ltd | アッシング装置 |
| US5711811A (en) * | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
| US5855680A (en) * | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
| US5997651A (en) * | 1995-10-18 | 1999-12-07 | Tokyo Electron Limited | Heat treatment apparatus |
| US6015590A (en) * | 1994-11-28 | 2000-01-18 | Neste Oy | Method for growing thin films |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113420A (ja) * | 1983-11-22 | 1985-06-19 | Mitsubishi Electric Corp | 半導体結晶の製造装置 |
| JPS60178621A (ja) * | 1984-02-24 | 1985-09-12 | Toshiba Corp | 薄膜形成装置 |
-
1985
- 1985-06-18 JP JP13221685A patent/JPS61289623A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113420A (ja) * | 1983-11-22 | 1985-06-19 | Mitsubishi Electric Corp | 半導体結晶の製造装置 |
| JPS60178621A (ja) * | 1984-02-24 | 1985-09-12 | Toshiba Corp | 薄膜形成装置 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179525A (ja) * | 1987-01-21 | 1988-07-23 | Tokyo Electron Ltd | アッシング装置 |
| US5711811A (en) * | 1994-11-28 | 1998-01-27 | Mikrokemia Oy | Method and equipment for growing thin films |
| US5855680A (en) * | 1994-11-28 | 1999-01-05 | Neste Oy | Apparatus for growing thin films |
| US6015590A (en) * | 1994-11-28 | 2000-01-18 | Neste Oy | Method for growing thin films |
| US6572705B1 (en) | 1994-11-28 | 2003-06-03 | Asm America, Inc. | Method and apparatus for growing thin films |
| US7404984B2 (en) | 1994-11-28 | 2008-07-29 | Asm America, Inc. | Method for growing thin films |
| US7498059B2 (en) | 1994-11-28 | 2009-03-03 | Asm America, Inc. | Method for growing thin films |
| US8507039B2 (en) | 1994-11-28 | 2013-08-13 | Asm America, Inc. | Method for growing thin films |
| US5997651A (en) * | 1995-10-18 | 1999-12-07 | Tokyo Electron Limited | Heat treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0544825B2 (enrdf_load_stackoverflow) | 1993-07-07 |
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