JPS61288616A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61288616A
JPS61288616A JP60131295A JP13129585A JPS61288616A JP S61288616 A JPS61288616 A JP S61288616A JP 60131295 A JP60131295 A JP 60131295A JP 13129585 A JP13129585 A JP 13129585A JP S61288616 A JPS61288616 A JP S61288616A
Authority
JP
Japan
Prior art keywords
transistor
base
drain
emitter
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60131295A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0411127B2 (https=
Inventor
Toshio Shigekane
重兼　寿夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP60131295A priority Critical patent/JPS61288616A/ja
Priority to DE8686304599T priority patent/DE3664851D1/de
Priority to EP86304599A priority patent/EP0219925B1/en
Priority to US06/875,076 priority patent/US4717849A/en
Publication of JPS61288616A publication Critical patent/JPS61288616A/ja
Publication of JPH0411127B2 publication Critical patent/JPH0411127B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches

Landscapes

  • Electronic Switches (AREA)
JP60131295A 1985-06-17 1985-06-17 半導体装置 Granted JPS61288616A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60131295A JPS61288616A (ja) 1985-06-17 1985-06-17 半導体装置
DE8686304599T DE3664851D1 (en) 1985-06-17 1986-06-16 Switching device
EP86304599A EP0219925B1 (en) 1985-06-17 1986-06-16 Switching device
US06/875,076 US4717849A (en) 1985-06-17 1986-06-17 Semiconductor device for conducting primary current upon receipt of a control signal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60131295A JPS61288616A (ja) 1985-06-17 1985-06-17 半導体装置

Publications (2)

Publication Number Publication Date
JPS61288616A true JPS61288616A (ja) 1986-12-18
JPH0411127B2 JPH0411127B2 (https=) 1992-02-27

Family

ID=15054625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60131295A Granted JPS61288616A (ja) 1985-06-17 1985-06-17 半導体装置

Country Status (4)

Country Link
US (1) US4717849A (https=)
EP (1) EP0219925B1 (https=)
JP (1) JPS61288616A (https=)
DE (1) DE3664851D1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989000360A1 (en) * 1987-07-03 1989-01-12 Beresford Clair Joseph Programmable switching transistor circuit
US4945266A (en) * 1987-11-18 1990-07-31 Mitsubishi Denki Kabushiki Kaisha Composite semiconductor device
DE3840434A1 (de) * 1988-12-01 1990-06-07 Philips Patentverwaltung Schaltungsanordnung fuer uebertragungseinrichtungen
US5001373A (en) * 1990-01-09 1991-03-19 Ford Motor Company Active clamp circuit with immunity to zener diode microplasmic noise
DE69326771T2 (de) * 1993-12-07 2000-03-02 Stmicroelectronics S.R.L., Agrate Brianza Ausgangstufe mit Transistoren von unterschiedlichem Typ
US5534768A (en) * 1994-02-09 1996-07-09 Harris Corporation Regulated power supply having wide input AC/DC voltage range
DE19926109B4 (de) * 1999-06-08 2004-08-19 Infineon Technologies Ag Leistungsschalter
EP1443649B1 (en) 2003-01-31 2008-08-13 STMicroelectronics S.r.l. Emitter switching configuration and corresponding integrated structure
US8253394B2 (en) * 2004-02-17 2012-08-28 Hewlett-Packard Development Company, L.P. Snubber circuit
ITMI20040356A1 (it) * 2004-02-27 2004-05-27 St Microelectronics Srl Circuito di pilotaggio di una configurazione emitter switching per controllare il livello di saturazione di un transistore di potenza in applicazioni che prevedono correnti di collettoree variabili in un ampio intervallo
DE102008060360A1 (de) * 2008-12-03 2010-06-10 Abb Technology Ag Schutzschaltungsanordnung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2053606B (en) * 1979-06-01 1983-09-14 Gould Advance Ltd Semi-conductor switching circuits
US4449063A (en) * 1979-08-29 1984-05-15 Fujitsu Limited Logic circuit with improved switching
DE3240778A1 (de) * 1982-11-04 1984-05-10 Siemens AG, 1000 Berlin und 8000 München Elektronischer schalter
US4547686A (en) * 1983-09-30 1985-10-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Hybrid power semiconductor switch
DE3338627A1 (de) * 1983-10-25 1985-05-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Ansteuerschaltung fuer einen kontaktlosen schalter, der aus der reihenschaltung eines bipolaren transistors und eines feldeffekttransistors besteht

Also Published As

Publication number Publication date
EP0219925B1 (en) 1989-08-02
JPH0411127B2 (https=) 1992-02-27
DE3664851D1 (en) 1989-09-07
US4717849A (en) 1988-01-05
EP0219925A1 (en) 1987-04-29

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