JPS61286294A - 単結晶引上装置 - Google Patents
単結晶引上装置Info
- Publication number
- JPS61286294A JPS61286294A JP12361485A JP12361485A JPS61286294A JP S61286294 A JPS61286294 A JP S61286294A JP 12361485 A JP12361485 A JP 12361485A JP 12361485 A JP12361485 A JP 12361485A JP S61286294 A JPS61286294 A JP S61286294A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- magnetic flux
- magnetic field
- electromagnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 48
- 230000004907 flux Effects 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 239000000155 melt Substances 0.000 abstract description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005206 flow analysis Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12361485A JPS61286294A (ja) | 1985-06-07 | 1985-06-07 | 単結晶引上装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12361485A JPS61286294A (ja) | 1985-06-07 | 1985-06-07 | 単結晶引上装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61286294A true JPS61286294A (ja) | 1986-12-16 |
| JPH0234915B2 JPH0234915B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-08-07 |
Family
ID=14864953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12361485A Granted JPS61286294A (ja) | 1985-06-07 | 1985-06-07 | 単結晶引上装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61286294A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62256787A (ja) * | 1986-04-30 | 1987-11-09 | Toshiba Ceramics Co Ltd | 単結晶の育成方法及びその装置 |
| JPS62256791A (ja) * | 1986-04-30 | 1987-11-09 | Toshiba Ceramics Co Ltd | 単結晶の育成装置 |
| JPS6424090A (en) * | 1987-07-20 | 1989-01-26 | Toshiba Ceramics Co | Method and apparatus for producing single crystal |
| WO2025134715A1 (ja) * | 2023-12-19 | 2025-06-26 | 株式会社Sumco | 単結晶の製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0471214U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1990-11-01 | 1992-06-24 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59203793A (ja) * | 1983-05-07 | 1984-11-17 | Agency Of Ind Science & Technol | 半絶縁性ガリウム砒素単結晶の製造方法 |
| JPS6081086A (ja) * | 1983-10-07 | 1985-05-09 | Shin Etsu Handotai Co Ltd | 単結晶の成長方法および装置 |
-
1985
- 1985-06-07 JP JP12361485A patent/JPS61286294A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59203793A (ja) * | 1983-05-07 | 1984-11-17 | Agency Of Ind Science & Technol | 半絶縁性ガリウム砒素単結晶の製造方法 |
| JPS6081086A (ja) * | 1983-10-07 | 1985-05-09 | Shin Etsu Handotai Co Ltd | 単結晶の成長方法および装置 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62256787A (ja) * | 1986-04-30 | 1987-11-09 | Toshiba Ceramics Co Ltd | 単結晶の育成方法及びその装置 |
| JPS62256791A (ja) * | 1986-04-30 | 1987-11-09 | Toshiba Ceramics Co Ltd | 単結晶の育成装置 |
| JPS6424090A (en) * | 1987-07-20 | 1989-01-26 | Toshiba Ceramics Co | Method and apparatus for producing single crystal |
| WO2025134715A1 (ja) * | 2023-12-19 | 2025-06-26 | 株式会社Sumco | 単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0234915B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dold et al. | Rotating magnetic fields: fluid flow and crystal growth applications | |
| Li et al. | Influence of an axial high magnetic field on the liquid–solid transformation in Al–Cu hypoeutectic alloys and on the microstructure of the solid | |
| JP6436031B2 (ja) | 単結晶引き上げ装置、及び単結晶引き上げ方法 | |
| Soward | Thermal and magnetically driven convection in a rapidly rotating fluid layer | |
| JPS6144797A (ja) | 単結晶育成装置およびその制御方法 | |
| Frank‐Rotsch et al. | Semiconductor crystal growth under the influence of magnetic fields | |
| CA1177367A (en) | Process for solidification | |
| Wang et al. | Progress on high magnetic field-controlled transport phenomena and their effects on solidification microstructure | |
| JPS61286294A (ja) | 単結晶引上装置 | |
| Witteveen et al. | Containerless metal single-crystal growth via electromagnetic levitation | |
| Decarlo et al. | Effect of applied magnetic fields during directional solidification of eutectic Bi-Mn | |
| JPH10120485A (ja) | 単結晶製造装置 | |
| Jiang et al. | Effect mechanism of a direct current on the solidification of immiscible alloys | |
| JP7230781B2 (ja) | 単結晶引き上げ装置及び単結晶引き上げ方法 | |
| JP3585731B2 (ja) | 磁界印加式単結晶製造装置 | |
| Hermann et al. | Influence of growth parameters and melt convection on the solid–liquid interface during RF-floating zone crystal growth of intermetallic compounds | |
| JPS63215587A (ja) | 単結晶の製造方法 | |
| JP2623465B2 (ja) | 単結晶引上げ装置 | |
| JPS6036392A (ja) | 単結晶引上装置 | |
| Gelfgat | Electromagnetic field application in the processes of single crystal growth under microgravity | |
| Wang et al. | Three-dimensional simulation of silicon melt flow in electromagnetic Czochralski crystal growth | |
| JPH10167875A (ja) | 単結晶製造装置 | |
| Grants et al. | Experimental study of the suppression of Rayleigh-Bénard instability in a cylinder by combined rotating and static magnetic fields | |
| JP2021046342A (ja) | 単結晶引上げ装置および単結晶引上げ方法 | |
| CN113046833A (zh) | 一种半导体晶体生长装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |