JPS6128227B2 - - Google Patents
Info
- Publication number
- JPS6128227B2 JPS6128227B2 JP49079669A JP7966974A JPS6128227B2 JP S6128227 B2 JPS6128227 B2 JP S6128227B2 JP 49079669 A JP49079669 A JP 49079669A JP 7966974 A JP7966974 A JP 7966974A JP S6128227 B2 JPS6128227 B2 JP S6128227B2
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- region
- acoustic wave
- integrated circuit
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 description 26
- 239000010408 film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009429 electrical wiring Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 gallium arsenide compound Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49079669A JPS5112780A (en) | 1974-07-10 | 1974-07-10 | Handotaishusekikairosochi |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49079669A JPS5112780A (en) | 1974-07-10 | 1974-07-10 | Handotaishusekikairosochi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5112780A JPS5112780A (en) | 1976-01-31 |
| JPS6128227B2 true JPS6128227B2 (enrdf_load_stackoverflow) | 1986-06-28 |
Family
ID=13696572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49079669A Granted JPS5112780A (en) | 1974-07-10 | 1974-07-10 | Handotaishusekikairosochi |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5112780A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276438U (enrdf_load_stackoverflow) * | 1985-10-31 | 1987-05-16 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5412544A (en) * | 1977-06-29 | 1979-01-30 | Toshiba Corp | Elastic surface wave unit |
| JPS596610A (ja) * | 1982-07-02 | 1984-01-13 | Clarion Co Ltd | 弾性表面波装置 |
| JPH0324719U (enrdf_load_stackoverflow) * | 1990-07-12 | 1991-03-14 |
-
1974
- 1974-07-10 JP JP49079669A patent/JPS5112780A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276438U (enrdf_load_stackoverflow) * | 1985-10-31 | 1987-05-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5112780A (en) | 1976-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3614678A (en) | Electromechanical filters with integral piezoresistive output and methods of making same | |
| US3634787A (en) | Electromechanical tuning apparatus particularly for microelectronic components | |
| JPH0245367B2 (enrdf_load_stackoverflow) | ||
| US4124828A (en) | Surface wave device for treating signals | |
| CN112204879B (zh) | 电可调表面声波谐振器 | |
| JP4509390B2 (ja) | 改善された集積型の発振器及び調整可能な回路 | |
| US3475664A (en) | Ambient atmosphere isolated semiconductor devices | |
| JPS6128227B2 (enrdf_load_stackoverflow) | ||
| JPH0521710A (ja) | 半導体装置 | |
| US4473767A (en) | Surface acoustic wave convolver with depletion layer control | |
| JPS6128226B2 (enrdf_load_stackoverflow) | ||
| US3678401A (en) | Solid-state traveling-wave amplification system | |
| JPS6257259B2 (enrdf_load_stackoverflow) | ||
| JPS6258550B2 (enrdf_load_stackoverflow) | ||
| JP2824329B2 (ja) | 可変容量ダイオード装置 | |
| JPH06204405A (ja) | 高周波発振器 | |
| Genzabella et al. | Integrated S band mixers | |
| JP2005229513A (ja) | 薄膜弾性表面波デバイス | |
| JPH0621533A (ja) | ノイズ・フィルタ | |
| JPS61180469A (ja) | 半導体分布インピ−ダンス装置 | |
| JPH02207534A (ja) | 半導体装置 | |
| JP2917428B2 (ja) | 半導体集積回路装置 | |
| JPS59191368A (ja) | 半導体装置 | |
| JPH0728003B2 (ja) | 薄膜ハイブリツドｉｃ | |
| JPH02283055A (ja) | 半導体装置に形成されたコンデンサ |