JPS61280639A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS61280639A JPS61280639A JP12223285A JP12223285A JPS61280639A JP S61280639 A JPS61280639 A JP S61280639A JP 12223285 A JP12223285 A JP 12223285A JP 12223285 A JP12223285 A JP 12223285A JP S61280639 A JPS61280639 A JP S61280639A
- Authority
- JP
- Japan
- Prior art keywords
- case
- metal
- semiconductor device
- semiconductor
- insulating glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置用ケースの構造に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a case for a semiconductor device.
従来、金属ケース上に種々の半導体素子、受動素子を使
用し任意の特性を持つ半導体装置は、第2図に示すよう
に構成されている。すなわち、金属ケース1と外部端子
となるリード2を絶縁ガラス3を高熱炉で反応させて融
着した半導体装置用ケースが設けられる。このケース上
にAu片あるいはエポキシ樹脂等4を用い表面に導電金
属5で回路配線されたアルミナ基板6が搭載されている
。Conventionally, a semiconductor device using various semiconductor elements and passive elements on a metal case and having arbitrary characteristics has been constructed as shown in FIG. That is, a semiconductor device case is provided in which a metal case 1 and a lead 2 serving as an external terminal are fused together by reacting an insulating glass 3 in a high-temperature furnace. Mounted on this case is an alumina substrate 6 which is made of a piece of Au or epoxy resin 4 and has a conductive metal 5 on its surface with circuit wiring.
半導体チップ7に金属細線8を用いて基板6上の回路配
線と接続されている。基板6上には、さらに受動素子9
が接続され、任意の特性を持つ用に調喪されている。半
導体素子7および金属線[8を保護する為に図示しない
金属キャップをかぶせ、金属ケース6と金属キャップが
電流溶接で封止されている。The semiconductor chip 7 is connected to circuit wiring on the substrate 6 using thin metal wires 8 . Passive elements 9 are further provided on the substrate 6.
are connected and tuned to have any characteristics. In order to protect the semiconductor element 7 and the metal wire [8, a metal cap (not shown) is placed over the semiconductor element 7 and the metal wire [8], and the metal case 6 and the metal cap are sealed by current welding.
ここで、従来の半導体装置用ケース1は金属であり、そ
のものが導電体である為、その上に直接半導体素子7あ
るいは、受動素子9を搭載する事ができなく、それ故、
アルミナ基板6等の絶縁された基板上に回路配線された
上に搭載する必要があった。この結果、製品価格が高く
なる。Here, since the conventional semiconductor device case 1 is made of metal and is a conductor, it is not possible to directly mount the semiconductor element 7 or the passive element 9 thereon.
It was necessary to mount the circuit on an insulated substrate such as an alumina substrate 6 with circuit wiring. This results in higher product prices.
本発明の半導体装置は、金属ケース上を絶縁ガラスが被
覆しており、この絶縁ガラス上に回路導体配線が融着さ
れている。したがって、アルミナ基板等の絶縁基板を搭
載する事なしで直接半導体素子あるいは受動素子を搭載
する事ができる。In the semiconductor device of the present invention, a metal case is covered with insulating glass, and circuit conductor wiring is fused onto the insulating glass. Therefore, semiconductor elements or passive elements can be directly mounted without mounting an insulating substrate such as an alumina substrate.
次に本発明の実施例に関し説明する。 Next, embodiments of the present invention will be described.
第1図は本発明による構造をもつ半導体装置用ケースで
作られた半導体装置である。第2図に示す通り金属ケー
ス1′と外部端子となるリード2′、さらに任意の回路
構成より設計された回路配線3′を絶縁ガラス4′で重
着し、さらにケース全体は金属でメッキされその上全体
を金メッキされる。ケース上にAu片あるいはエポキシ
樹脂、半田等で半導体素子5′および受動素子9′が接
着され、これらは金属細線8′を用いて必要配線間を接
続されており、任意の特性に調整され、半導体素子5′
及び金属細線9′を保繰する為に図示しない金属キャッ
プを電流溶接で金属ケース1′に封止されている。FIG. 1 shows a semiconductor device made with a semiconductor device case having a structure according to the present invention. As shown in Figure 2, a metal case 1', leads 2' that serve as external terminals, and circuit wiring 3' designed from an arbitrary circuit configuration are layered with insulating glass 4', and the entire case is plated with metal. The entire top is plated with gold. A semiconductor element 5' and a passive element 9' are bonded onto the case with Au pieces, epoxy resin, solder, etc., and these are connected between necessary wirings using thin metal wires 8', and the characteristics can be adjusted as desired. Semiconductor element 5'
In order to preserve the thin metal wire 9', a metal cap (not shown) is sealed in the metal case 1' by current welding.
以上の様に本発明の構造を有する半導体装置用ケースを
用いる事によりアルミナ等の絶縁材を用いて回路配線を
行なう必要がなくなり、組立てプロセス及び部品点数も
低減できる。As described above, by using a semiconductor device case having the structure of the present invention, there is no need to use an insulating material such as alumina for circuit wiring, and the assembly process and number of parts can be reduced.
第1図囚、@は本発明の一実施例を示す平面図と断面図
、第2図(5)、(B)は従来例を示す平面図。
断面図である。
11.1’・・・・・・金属ケース、2,2′・・・・
・・外部端子用リード、3.3’・・・・・・絶縁ガラ
ス、5・・・・・・導電材金属(メッキが施しである)
、4・・・・・・Au片orエポキシ樹脂、6・・・・
・・アルミナ絶縁基板、7,7’・・・・・・半導体チ
ップ、8,8′・・・・・・金属細線、9,9′・・・
・・・受動素子。
代理人 弁理士 内 原 音
茅 2 図Figure 1 (5) and (B) are a plan view and a sectional view showing an embodiment of the present invention, and Figures 2 (5) and (B) are plan views showing a conventional example. FIG. 11.1'...Metal case, 2,2'...
...External terminal lead, 3.3'...Insulating glass, 5...Conductive material metal (plated)
, 4... Au piece or epoxy resin, 6...
...Alumina insulating substrate, 7,7'...Semiconductor chip, 8,8'...Metal thin wire, 9,9'...
...Passive element. Agent Patent Attorney Uchihara Otokyo 2 Diagram
Claims (1)
前記ケースの一部を覆い、この部分上に直接回路配線導
体が形成され、少なくとも半導体素子が接着されている
事を特徴とする半導体装置。1. A semiconductor device characterized in that an external lead terminal is fused to a case with an insulating glass, a part of the case is covered, a circuit wiring conductor is formed directly on this part, and at least a semiconductor element is bonded.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12223285A JPS61280639A (en) | 1985-06-05 | 1985-06-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12223285A JPS61280639A (en) | 1985-06-05 | 1985-06-05 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61280639A true JPS61280639A (en) | 1986-12-11 |
Family
ID=14830839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12223285A Pending JPS61280639A (en) | 1985-06-05 | 1985-06-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61280639A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62163952U (en) * | 1986-04-07 | 1987-10-17 |
-
1985
- 1985-06-05 JP JP12223285A patent/JPS61280639A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62163952U (en) * | 1986-04-07 | 1987-10-17 |
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