JPS61279123A - Oxidation and diffusion device for semiconductor - Google Patents

Oxidation and diffusion device for semiconductor

Info

Publication number
JPS61279123A
JPS61279123A JP12207285A JP12207285A JPS61279123A JP S61279123 A JPS61279123 A JP S61279123A JP 12207285 A JP12207285 A JP 12207285A JP 12207285 A JP12207285 A JP 12207285A JP S61279123 A JPS61279123 A JP S61279123A
Authority
JP
Japan
Prior art keywords
end cap
oxidation
gas
inserting hole
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12207285A
Other languages
Japanese (ja)
Inventor
Shin Itagaki
板垣 伸
Yoshie Kumada
熊田 好江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP12207285A priority Critical patent/JPS61279123A/en
Publication of JPS61279123A publication Critical patent/JPS61279123A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the contamination caused by the intrusion of the outside air by a method wherein a push-rod inserting hole stopper is integrally formed at the end part of the tube of an oxidation and diffusion furnace, and said push-rod inserting hole is closed up by rotating an end cap. CONSTITUTION:A push-rod inserting hole stopper 8 is integrally formed at the furnace end part of an oxidation and diffusion furnace tube 1. When the end cap 4 is inserted into the tube 1 in such a manner that the stopper 8 and the push-rod inserting hole of the end cap 4 are overlapped by rotating the end cap, the intrusion of the outside air from the inserting hole 6 can be prevented. Gas is exhausted from a gas exhaust nozzle 9, and the intrusion of the outside air due to the variation of pressure caused by the expansion and contraction of the gas can also be prevented by having the nozzle of 20cm or more in length. When the boat 7 carrying a wafer is pushed to the core part of the furnace, the push-rod is inserted from the inserting hole 6 by rotating the end cap 4.

Description

【発明の詳細な説明】 A 産業上の利用分野 本発明は、半導体装置の製造工程で使用される半導体の
酸化、拡散装f1t、VC関する。
DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to semiconductor oxidation, diffusion devices flt, and VC used in the manufacturing process of semiconductor devices.

B 発明の概要 半導体の酸化、拡散装置のエンドキャップにはプッシュ
ロッド挿入口とガス排出ノズルが設けられている。その
エンドキャップを回転させると、チューブと一体に形成
されているストッパがそのプッシュロッド挿入口をふさ
ぐ。
B. Summary of the Invention The end cap of the semiconductor oxidation and diffusion device is provided with a push rod insertion port and a gas discharge nozzle. When the end cap is rotated, a stopper formed integrally with the tube closes the push rod insertion port.

C従来の技術 半導体の酸化、拡散などに用いられる炉では、チューブ
の一方Ki$けられたガス導入口から雰囲気ガス、ドー
ビンクガスなどの谷穐ガスを尋人し、炉14側から排出
する構造となっている。従来用いられている一般的な酸
化、拡散炉をip、3図に示す。
C. Conventional technology Furnaces used for semiconductor oxidation, diffusion, etc. have a structure in which atmospheric gas, dobin gas, and other gases are introduced from the gas inlet on one side of the tube and discharged from the furnace 14 side. It has become. A conventionally used general oxidation and diffusion furnace is shown in Figure 3.

チューブ1内に導入されたガスは、炉端のエンドキャッ
プ4に設けられたプッシュロッド挿入口6およびチュー
ブ1とエンドキャップ4のすり合わせ部分から炉外へ流
れ出る。図中2はガス導入口、3は抵抗加熱ヒータ、5
はプッシュロッド、7はボートおよびウニ八に示す。
The gas introduced into the tube 1 flows out of the furnace through a push rod insertion port 6 provided in an end cap 4 at the end of the furnace and a mating portion between the tube 1 and the end cap 4. In the figure, 2 is a gas inlet, 3 is a resistance heater, and 5
is the push rod, 7 is the boat and sea urchin eight.

D 発明が解決しようとする間組点 この構造では、炉心部で酸化、拡散などの処理温度(通
常は1000 C薊恢)まで熱せられた尋人ガスは膨張
し、体積を増すが、炉端部では200〜300 U以下
となり、膨張したガスは収縮し、体積を減じて炉外へ出
る。このガスの膨張、収縮によ   ゛る圧力変化のた
め、炉外から外気かエンドキャツプ4のプッシュロッド
仲人口6を通して炉中へ進入し、汚染の原因となるとい
う欠点があった。
D In this structure, the gas that is heated to the temperature for oxidation, diffusion, etc. (usually 1000 C) in the reactor core expands and increases in volume, but at the end of the reactor The gas becomes 200 to 300 U or less, and the expanded gas contracts, reduces its volume, and exits from the furnace. Due to pressure changes due to the expansion and contraction of this gas, outside air from outside the furnace enters the furnace through the push rod member 6 of the end cap 4, causing contamination.

本発明の目的は、土配エンドキャップ伸人口からの外気
の進入による汚染を防止し、酸化、拡散の信順性を改善
することかでさる半導体の酸化。
The object of the present invention is to prevent contamination due to intrusion of outside air from the end cap extension hole and to improve the reliability of oxidation and diffusion, thereby oxidizing semiconductors.

拡散装kを提供することである。The purpose is to provide a diffusion device k.

E 8廟点を解決するための+段 上記目的を達成するために、本発明による半導体の酸化
、拡散装置は、拡散炉チューブの端部に設けられ、プッ
シュロッド挿入口とガス排出ノズルを有するエンドギャ
ップと、拡散炉チューブと一体に形成され、上記エンド
キャップを回転するとき、上記プッシュロッド挿入口t
ふさぐ位置に設けられたストッパとを含むことを賛旨と
する。
In order to achieve the above objectives, the semiconductor oxidation and diffusion device according to the present invention is provided at the end of the diffusion furnace tube, and has a push rod insertion port and a gas discharge nozzle. The end gap is formed integrally with the diffusion furnace tube, and when the end cap is rotated, the push rod insertion port t
The idea is to include a stopper provided at the blocking position.

F 作用 プッシュロッド押入口が不用の場合には、エンドキャッ
プを回転させれば、それはストッパでふさがれる。
F Function If the push rod inlet is not needed, it can be closed by a stopper by rotating the end cap.

G 実施例 比1図は本発明による半導体のば化、拡散装置の断面図
、第2図は敵化、拡散炉チューブの正面図で、図中第3
図と共通する引用査号は第3図におけるものと同じ部分
を表わし、8はチューブと一体に形成されたプッシュロ
ッド挿入ロストツバ、9はガス排出ノズル′?:表わす
G Embodiment Figure 1 is a cross-sectional view of a semiconductor diffusion and diffusion device according to the present invention, and Figure 2 is a front view of a diffusion furnace tube.
Reference numbers common to the figure represent the same parts as in Figure 3, 8 is a push rod insertion lost collar formed integrally with the tube, 9 is a gas discharge nozzle'? :Represent.

第1図および第2図にポす酸化、拡散炉では、炉端部に
石英製のチューブ本体lと一体にストッパ8が形成され
ている。これとエンドキャラ7′4のプッシュロッド押
入口6が貰なるようにエンドキャップ4をチューブ1に
嵌め込むと、挿入口6からの外気の進入が防止される。
In the oxidation and diffusion furnace shown in FIGS. 1 and 2, a stopper 8 is formed integrally with the quartz tube body 1 at the end of the furnace. When the end cap 4 is fitted into the tube 1 so as to cover the push rod inlet 6 of the end collar 7'4, entry of outside air from the insertion inlet 6 is prevented.

この際、ガスは別にエンドキャップ4に設けられたガス
排出ノズル9から排出される。ノズル9の長さが’XJ
rs以上あれば、ガス出口からチューブ本体lまでの距
離が十分にあるばかりでな(、ノズル出目におけるガス
の温度は十分VC下かり、ガスの#訳、収動による圧力
変化に伴なう外気の進入を防止することができる。また
ガスも支障な(排出することができる。さらに、ノズル
による排出ガス圧力の増大の効果も期待できる。ボート
を炉心部へブツシュする際にはエンドキャップ4を18
09回転させてチューブへ嵌め込んでおけば、挿入口6
からプッシュロッドを挿入し、容易にボートを中央ヘブ
ツシュすることができる。
At this time, the gas is discharged from a gas discharge nozzle 9 separately provided on the end cap 4. The length of nozzle 9 is 'XJ
If it is more than rs, the distance from the gas outlet to the tube body l is sufficient (the temperature of the gas at the nozzle exit is sufficiently VC lowered, and the pressure changes due to the contraction of the gas). It is possible to prevent outside air from entering.It is also possible to exhaust gas (which is a nuisance).Furthermore, the effect of increasing the exhaust gas pressure by the nozzle can be expected.When pushing the boat into the reactor core, the end cap 4 18
09 Rotate it and fit it into the tube, and the insertion port 6
Insert the push rod from the bottom and you can easily center the boat.

H発明の詳細 な説明した通り、本発明によれば、外気の進入による汚
染等な防止し、酸化、拡散プロセスの特性の安定化V図
ることができる。
As described in detail, according to the present invention, it is possible to prevent contamination caused by entry of outside air and to stabilize the characteristics of oxidation and diffusion processes.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による半導体の酸化、拡散装置の断面図
、第2図は酸化、拡散炉チューブの正面図、第3図は従
来の半導体の酸化、拡散装置の断面図である。 1・・・酸化、拡散炉チューブ、2・・・ガス導入口、
3・・・抵抗加熱ヒータ、4・・・エンドキャップ、5
・・・プッシュロッド、6・・・エンドキャップのプッ
シュロッド挿入口、7・・・ボートおよびクエへ、8・
・・プッシュロッド挿入ロストツバ、9・・・ガス排出
ノズル・
FIG. 1 is a sectional view of a semiconductor oxidation/diffusion device according to the present invention, FIG. 2 is a front view of an oxidation/diffusion furnace tube, and FIG. 3 is a sectional view of a conventional semiconductor oxidation/diffusion device. 1... Oxidation, diffusion furnace tube, 2... Gas inlet,
3... Resistance heater, 4... End cap, 5
...Push rod, 6...Push rod insertion port of end cap, 7...To boat and square, 8.
・Push rod insertion lost collar, 9...Gas exhaust nozzle・

Claims (1)

【特許請求の範囲】 (a)拡散炉チューブの端部に設けられ、プッシュロッ
ド挿入口とガス排出ノズルを有するエンドキャップ、お
よび (b)拡散炉チューブと一体に形成され、エンドキャッ
プを回転するとき、上記プッシュロッド挿入口をふさぐ
位置に設けられたストッパ を含むことを特徴とする半導体の酸化、拡散装置。
[Claims] (a) An end cap provided at the end of the diffusion furnace tube and having a push rod insertion port and a gas discharge nozzle; and (b) An end cap formed integrally with the diffusion furnace tube and configured to rotate the end cap. A semiconductor oxidation and diffusion device comprising: a stopper provided at a position to block the push rod insertion port.
JP12207285A 1985-06-05 1985-06-05 Oxidation and diffusion device for semiconductor Pending JPS61279123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12207285A JPS61279123A (en) 1985-06-05 1985-06-05 Oxidation and diffusion device for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12207285A JPS61279123A (en) 1985-06-05 1985-06-05 Oxidation and diffusion device for semiconductor

Publications (1)

Publication Number Publication Date
JPS61279123A true JPS61279123A (en) 1986-12-09

Family

ID=14826947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12207285A Pending JPS61279123A (en) 1985-06-05 1985-06-05 Oxidation and diffusion device for semiconductor

Country Status (1)

Country Link
JP (1) JPS61279123A (en)

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