JPS58122739A - Oxidation diffusion furnace - Google Patents
Oxidation diffusion furnaceInfo
- Publication number
- JPS58122739A JPS58122739A JP506782A JP506782A JPS58122739A JP S58122739 A JPS58122739 A JP S58122739A JP 506782 A JP506782 A JP 506782A JP 506782 A JP506782 A JP 506782A JP S58122739 A JPS58122739 A JP S58122739A
- Authority
- JP
- Japan
- Prior art keywords
- quartz tube
- nozzle
- diffusion furnace
- oxidation diffusion
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は酸化拡散炉、特に石英管の端部に設けられ九酸
素吹出孔と水素ノズル挿入孔Ｏ改ｊＬＫ関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an oxidation diffusion furnace, particularly to an oxygen blowing hole and a hydrogen nozzle insertion hole provided at the end of a quartz tube.
第１ ｍｌ（ｍ） 、 （ｂ）は従来より提案されてい
る半導体ウェーハのスチーム酸化拡散炉〇−例を示す要
部断面構成図、その側面図で６る・
同図にお−て、１は石英ガラスからなる石英管であり、
この石英管１の一端にはこＯ石英管１の内１１に酸素ガ
スを送り込むための酸素吹出孔１ｍと水素ガス注入用の
ノズル２を挿入す番挿入７Ｌ１１１Ｐとが一体的に設け
られており、まえ、こ０石英管１０他端儒にはスチーム
を外部に排出１せかう多・数のシリコ／ウェーハ３を搭
載したホルダ４を出入する開口部１ｃが同軸的に一体形
成されている・畜らにこの石英管１０外周儒にはこの石
英管１の内部を１０００〜１２００℃に加熱する加熱体
５が配設されている。1 ml (m), (b) is a cross-sectional configuration diagram of essential parts showing an example of a conventionally proposed steam oxidation diffusion furnace for semiconductor wafers, and its side view is 6. is a quartz tube made of quartz glass,
One end of this quartz tube 1 is integrally provided with an oxygen blowing hole 1m for feeding oxygen gas into the inner 11 of the quartz tube 1 and an insertion hole 7L111P for inserting a nozzle 2 for injecting hydrogen gas. At the other end of the quartz tube 10, an opening 1c for discharging steam to the outside and for entering and exiting a holder 4 carrying a large number of silica/wafers 3 is coaxially formed. A heating element 5 for heating the inside of the quartz tube 1 to 1000 to 1200 DEG C. is disposed around the outer periphery of the quartz tube 10.
このように構成され九スチーム酸化拡散炉において、石
英管１の高温度便用による管の変形が生じた場合には、
石英管１を周方向に回転させて石英管１の寿命を嬌ばし
ていた。In the nine-steam oxidation diffusion furnace constructed in this way, if the quartz tube 1 is deformed due to high-temperature use,
The life of the quartz tube 1 is extended by rotating the quartz tube 1 in the circumferential direction.
とζろが、石英ｇ１はその一端１１において、酸素吹出
孔１ｍと水素ノズル２の挿入孔１ｂとがそれぞれ別々に
設けられて−るため、石英管１０周方向Ｏａ転が困離と
なる欠点があつ九。However, since the quartz g1 has separate oxygen blowing holes 1m and hydrogen nozzle 2 insertion holes 1b at one end 11, it is difficult to rotate the quartz tube 10 in the circumferential direction Oa. But nine.
し九がって本発明は、酸素吹出孔と水素ノズル挿入孔と
を同一孔とすることによって、石英管の周方向０Ｉｉ１
転を容１にし、石英管の寿命を嬌長さｒｆ／１ｍ化拡散
炉を提供することを目的としている。Therefore, in the present invention, by making the oxygen blowing hole and the hydrogen nozzle insertion hole the same hole, the circumferential direction 0Ii1 of the quartz tube is
The purpose of this invention is to provide a diffusion furnace with a quartz tube having a length of 1 m and a length of rf/1 m.
以下、１ｇ′漏を用いて本発明の実ｍ岡を詳細に説明す
る。Hereinafter, the actual operation of the present invention will be explained in detail using 1g' leakage.
露！ＩＩ（耐、（ｂ）は本発明による半導体クエーハの
スチーム酸化拡散炉の一例を示す要部断面構成図。Dew! II (B) is a cross-sectional configuration diagram of essential parts showing an example of a steam oxidation diffusion furnace for semiconductor wafers according to the present invention.
その側面図で６６、第１図と同記号は同一要素となるの
でその説明は省略する・同図において、石英管１の一端
側中央部には後述する酸素、水素ガス注入用ノズルを挿
入する開口部１直が同軸的に一体形成され、この開口部
１６には、酸素ガス注入用ノズル・内に水素ガス注入用
ノズル２を挿入し九ノズル組立体Ｔが挿入配置されてい
る。そして、これらの酸素ガス注入用ノズル６、水素ガ
ス注入用ノズル２には、それぞれ図示しないガス供給１
１に連結され九酸嵩ガス供給部６畠、水素ガス供給部２
ｍが結合され、それぞれ所定のガスが石英管１内に供給
１れる。The side view shows 66, and the same symbols as in Figure 1 are the same elements, so their explanation will be omitted. In the figure, a nozzle for injecting oxygen and hydrogen gas, which will be described later, is inserted into the center of one end of the quartz tube 1. An opening 1 is integrally formed coaxially, and a nozzle assembly T is inserted into this opening 16, with a hydrogen gas injection nozzle 2 inserted into an oxygen gas injection nozzle. These oxygen gas injection nozzles 6 and hydrogen gas injection nozzles 2 each have a gas supply 1 (not shown).
1 connected to the nine acid bulk gas supply section 6, and the hydrogen gas supply section 2
m are combined, and respective predetermined gases are supplied into the quartz tube 1.
このような構成によれば、石英管１０一端側中央開口部
１ｄの一箇所から酸素、水素ガスを供給するように構成
したことによって、石英管１０周方向Ｏａ転が注入用ノ
ズル２，６の配管に邪魔されずに容Ｊ６に行なえる丸め
、石英管１０１ｍ！形が生じ九場合の石英管１０回転が
簡略化され、石英管１の寿命を延ばすことが可能となる
。According to such a configuration, since oxygen and hydrogen gas are supplied from one location of the central opening 1d on one end side of the quartz tube 10, Oa rotation in the circumferential direction of the quartz tube 10 is controlled by the injection nozzles 2 and 6. A 101m quartz tube that can be rolled up to J6 size without getting in the way of piping! 10 rotations of the quartz tube when the shape is formed is simplified, and the life of the quartz tube 1 can be extended.
以上説明し九ように本発明によれば、スチーム酸化拡散
炉においても石英管の回転ができるので、石英管の変形
が生じた場合にも石英管の回転が害鳥となり、石英管の
寿命を２〜３債１１＆に延ばすことがで亀るという極め
て優れ九効果が得られた。As explained above, according to the present invention, the quartz tube can be rotated even in a steam oxidation diffusion furnace, so even if the quartz tube is deformed, the rotation of the quartz tube becomes a pest, reducing the lifespan of the quartz tube by 20%. An extremely excellent effect was obtained by extending the bond to ~3 and 11&.
第１１！！Ｑ（ａ） 、 （ｂ）は従来のスチーム酸化
拡散炉の一例を示す要部断面構成図、その側ｍ図、第２
図（ａ）、（ｂ）は本実＠によるスチーム酸化拡散炉の
一例を示す要部断面構成図、その側面図である。
１・・・・石英管、１ｄ・・・・開口部、２・・・・水
素ガス注入用ノズル、１ｍ ・・・・水素ガス供給部、
６・・・・酸素ガス注入用ノズル、６１・・・・酸素ガ
ス供給部、Ｔ・・・・ノズル組立体。
代 理 人 弁理士 薄 １）利 幸11th! ! Q(a) and (b) are main part cross-sectional configuration diagram showing an example of a conventional steam oxidation diffusion furnace, its side view, and the second
Figures (a) and (b) are a cross-sectional configuration diagram of essential parts and a side view of an example of a steam oxidation diffusion furnace according to Honjitsu@. 1...Quartz tube, 1d...Opening, 2...Hydrogen gas injection nozzle, 1m...Hydrogen gas supply section,
6...Oxygen gas injection nozzle, 61...Oxygen gas supply section, T...Nozzle assembly. Agent Patent Attorney Usui 1) Toshiyuki
Claims (1)
石英管を少なくとも備え九酸化拡歓デにおいて、前記石
英管の酸素、水素注入孔を同一孔とし九ことを特徴とす
る酸化拡散炉０An oxidation diffusion furnace comprising at least a quartz tube for oxidizing and diffusing semiconductor wafers in a bulk atmosphere of oxygen and water, characterized in that oxygen and hydrogen injection holes in the quartz tube are the same hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP506782A JPS58122739A (en) | 1982-01-18 | 1982-01-18 | Oxidation diffusion furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP506782A JPS58122739A (en) | 1982-01-18 | 1982-01-18 | Oxidation diffusion furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58122739A true JPS58122739A (en) | 1983-07-21 |
| JPH0520900B2 JPH0520900B2 (en) | 1993-03-22 |
Family
ID=11601038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP506782A Granted JPS58122739A (en) | 1982-01-18 | 1982-01-18 | Oxidation diffusion furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58122739A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04299828A (en) * | 1991-03-28 | 1992-10-23 | Shin Etsu Handotai Co Ltd | Semiconductor substrate treatment device |
| CN105508744A (en) * | 2016-01-07 | 2016-04-20 | 湖州奥博石英科技有限公司 | Inclined ground quartz tube structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5325364A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Hydrogen combustion type oxidation furnace |
| JPS546867U (en) * | 1977-06-16 | 1979-01-17 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5378173A (en) * | 1976-12-22 | 1978-07-11 | Toshiba Corp | Manufacture of semiconductor device |
-
1982
- 1982-01-18 JP JP506782A patent/JPS58122739A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5325364A (en) * | 1976-08-23 | 1978-03-09 | Hitachi Ltd | Hydrogen combustion type oxidation furnace |
| JPS546867U (en) * | 1977-06-16 | 1979-01-17 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04299828A (en) * | 1991-03-28 | 1992-10-23 | Shin Etsu Handotai Co Ltd | Semiconductor substrate treatment device |
| CN105508744A (en) * | 2016-01-07 | 2016-04-20 | 湖州奥博石英科技有限公司 | Inclined ground quartz tube structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0520900B2 (en) | 1993-03-22 |
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