JPS6127900B2 - - Google Patents
Info
- Publication number
- JPS6127900B2 JPS6127900B2 JP55096699A JP9669980A JPS6127900B2 JP S6127900 B2 JPS6127900 B2 JP S6127900B2 JP 55096699 A JP55096699 A JP 55096699A JP 9669980 A JP9669980 A JP 9669980A JP S6127900 B2 JPS6127900 B2 JP S6127900B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor
- back surface
- crystal
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000013078 crystal Substances 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 57
- 230000007547 defect Effects 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000035882 stress Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9669980A JPS5721826A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor single crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9669980A JPS5721826A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor single crystal wafer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1330186A Division JPS61198637A (ja) | 1986-01-24 | 1986-01-24 | 半導体単結晶ウエハ−の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5721826A JPS5721826A (en) | 1982-02-04 |
| JPS6127900B2 true JPS6127900B2 (fr) | 1986-06-27 |
Family
ID=14172005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9669980A Granted JPS5721826A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor single crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5721826A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206431A (ja) * | 2008-02-29 | 2009-09-10 | Sumco Corp | シリコン基板とその製造方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5938492U (ja) * | 1982-08-31 | 1984-03-10 | 富士通株式会社 | プラズマデイスプレイパネルの駆動回路 |
| JPS61198637A (ja) * | 1986-01-24 | 1986-09-03 | Nec Corp | 半導体単結晶ウエハ−の製法 |
| KR20030002847A (ko) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
-
1980
- 1980-07-15 JP JP9669980A patent/JPS5721826A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206431A (ja) * | 2008-02-29 | 2009-09-10 | Sumco Corp | シリコン基板とその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5721826A (en) | 1982-02-04 |
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