JPS61276329A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To simultaneously form a uniform film on a substrate by gradually widening the bore of the upper end of a reaction tube with respect to the lower end, and providing an external heating heater along the periphery of the widened tube, thereby uniforming forming the temperature distribution of the tube. CONSTITUTION:Conductor, semiconductor and insulator films are formed in a vertical reaction tube 30 of a semiconductor manufacturing equipment, and an external heating heater 60 is disposed in the outer periphery of the tube 30. A silicon substrate 1 is placed on a port 2 of the tube 30, and reaction gas is fed from a gas inlet 4. The bore of the upper end of the tube 30 is gradually widened with respect to the lower end, and the heating heater 60 is disposed along the periphery of the tube 30. The temperature distribution in the tube 30 is equalized to simultaneously form a uniform film on the substrate 1 in the tube 30.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor manufacturing apparatus for forming conductor, semiconductor and insulator films on a semiconductor substrate, particularly a silicon substrate.

[Conventional technology]

Figure 2 is a schematic diagram showing an example of conventional semiconductor manufacturing equipment.
1 is a silicon substrate, 2 is a port on which the silicon substrate 1 is placed, 3 is a reaction tube, 4 is a gas inlet, 5 is an exhaust port, and 6 is an external heater provided around the reaction W3. In addition, FIG. 3 shows a semiconductor manufacturing 11R having a vertical reaction tube 3, which was designed to accommodate the larger diameter of the silicon substrate 1.
In this diagram, the same reference numerals as in FIG. 2 indicate the same parts.

Next, the operation will be explained.

Inside the reaction tube 3, the silicon substrate 1 placed on the boat 2 is exposed to oxygen, water vapor, or hydrogen and oxygen in the case of thermal oxidation, and in the case of film formation under reduced pressure or plasma-like deterioration. is silane.

Gases such as dichlorosilane, 7-ammonium-7, -acid charcoal, phosphine, etc. are supplied from the gas inlet 4, and a thermal reaction is caused by the external heater 6, and various conductive films, semiconductor films, and An insulating film is formed.

[Problem that the invention seeks to solve]

Conventional semiconductor manufacturing equipment as described above uses silicon base &
It was necessary to insert the gas into the reaction tube 3 and control the flow rate of the introduced gas to form a homogeneous film. Furthermore, as the diameter of the silicon substrate 1 increases, it is necessary to increase the diameter of the reaction tube 3. However, in high-temperature heat treatment reactions, there is a problem that the external heater 6 deforms due to its own weight. As the semiconductor manufacturing equipment having the reaction tube 3 rises, the upper silicon substrate 1 inside the reaction tube 3 rises.
is exposed to a higher temperature gas than the lower silicon substrate 1, so the heat distribution becomes uneven, and the gas density is different between the upper and lower parts of the reaction tube 3, and at the same time a large amount of silicon substrate 1
When forming a film, there is a problem in that the quality of the film differs due to the difference in reaction rate K between the upper and lower parts of the reaction tube 3.

The present invention was made to solve these problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus that can simultaneously form a uniform film on a large number of large-diameter silicon substrates.

[Means for solving problems] The semiconductor manufacturing apparatus according to the present invention has a conductor inside.

A vertical reaction tube in which semiconductor and insulator films are formed is gradually made wider in diameter at the top than at the bottom, and an external heater is provided along the periphery of the reaction tube, which gradually becomes wider.

[Effect]

In this invention, since the diameter of the upper part of the reaction tube is gradually wider than that of the lower part, there is no difference in gas density between the upper and lower parts of the reaction tube, and the upper part of the reaction tube is connected to an external heater and a silicon substrate. The distance increases, and the local temperature rise caused by the rise of high-temperature gas is alleviated.

〔Example〕

FIG. 1 is a schematic diagram showing an embodiment of the semiconductor manufacturing apparatus of the present invention, in which the same reference numerals as in FIG. ,
60 is an external heater provided around the reaction tube 30.

Next, the operation of the semiconductor manufacturing apparatus of the present invention will be explained.

First, gas is introduced from the gas inlet 4 and the inside of the reaction tube 30 is heated by the external heater 60, but since the diameter of the reaction tube 30 gradually widens toward the top, the external heater 60 The distance between the silicon substrate 1 and the silicon substrate 1 also increases with respect to the upper part of the line <K.
The difference in gas density between the upper and lower parts of the reaction tube 30 can be eliminated.

Conventionally, there has been a method for controlling temperature non-uniformity by dividing the external heater 60 and controlling the control system separately, but a sufficient effect could not be obtained. However, according to the present invention, uniform temperature distribution can be easily obtained.

In the above embodiments, a case has been described in which film formation is carried out by ordinary oxidation, diffusion, etc. using the semiconductor manufacturing apparatus of the present invention, but it goes without saying that low pressure CVD and plasma CVD can also be carried out.

〔Effect of the invention〕

As explained above, in this invention, the diameter of the upper part of the vertical reaction tube is gradually wider than that of the lower part, and an external heater is provided along the circumference of the reaction tube, which gradually becomes wider. The temperature distribution becomes uniform, and the gas density also becomes uniform, so that a uniform film can be formed on a large number of large-diameter silicon substrates at the same time.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing an embodiment of the semiconductor manufacturing device of the present invention, FIG. 2 is a schematic diagram showing an example of a conventional semiconductor manufacturing device, and FIG. 3 is a conventional semiconductor manufacturing device having a vertical reaction tube. FIG. In the figure, 30 is a reaction tube, and 60 is an external heater. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1, Figure 2, etc.

Claims (1)

[Claims] In semiconductor manufacturing equipment that has a vertical reaction tube in which conductor, semiconductor, and insulator films are formed, and an external heater provided around the reaction tube, the diameter of the upper part of the reaction tube is set relative to the lower part. A semiconductor manufacturing apparatus characterized in that the reaction tube is gradually widened and an external heater is provided along the periphery of the gradually widened reaction tube.