KR100244040B1 - Semiconductor manufacturing system and substrate processing method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus that improves the uniformity of temperature distribution in a wafer surface. The present invention provides a crack tube 230 in a heater 220 and a reaction tube 100 inside the heater 220. . The crack tube 100 includes a reaction tube body 10 having a circular cross section and four gas introduction tubes 111-114 disposed in the vertical direction along the bus bar direction on the outer surface thereof. Gas is supplied from the lower end portions of the gas introduction pipes 111 to 114, and gas is supplied from the upper portion of the reaction tube body 10 to the inside thereof. The gas after the reaction is exhausted from the exhaust pipe 51 near the lower end of the reaction tube body 10. The boat 210 is disposed in the reaction tube main body 10, and a plurality of wafers 200 are loaded in multiple stages in a horizontal posture. Since gas is supplied by the four gas introduction pipes 111-114 which are equally arranged around the reaction tube main body 10, the periphery of the reaction tube main body 10 becomes an approximately equal condition, and it is local in the surface of the wafer 200. As a result, there is no cooling part, which improves the uniformity of temperature distribution.

Description

Semiconductor manufacturing apparatus and substrate processing method

FIG. 1 is a diagram for explaining a semiconductor manufacturing apparatus according to a first embodiment of the present invention. FIG. 1A is a cross-sectional view and FIG. 1B is a cross-sectional view taken along the line X1-X1 of FIG. 1A.

2 is a partial schematic perspective view for explaining a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

3 is a block diagram illustrating a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

4 is a perspective view for explaining a reaction tube used in the semiconductor manufacturing apparatus according to the third embodiment of the present invention.

5 is a perspective view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention.

6 is a cross-sectional view illustrating a semiconductor manufacturing apparatus according to a fourth exemplary embodiment of the present invention. FIG. 6A is a cross-sectional view and FIG. 6B is a cross-sectional view taken along line X6-X6 of FIG. 6A.

7 is a partially enlarged perspective view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention.

8 is a view for explaining a reaction tube used in the semiconductor manufacturing apparatus according to the fifth embodiment of the present invention, Figure 8a is a partially enlarged perspective view of the reaction tube, Figure 8b is a fifth embodiment of the present invention It is a perspective view for demonstrating the porous material used by a semiconductor manufacturing apparatus.

9 is a cross-sectional view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a sixth embodiment of the present invention.

10 is a cross-sectional view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a seventh embodiment of the present invention.

11 is a cross-sectional view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to an eighth embodiment of the present invention.

12 is a cross-sectional view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a ninth embodiment of the present invention.

13 is a cross-sectional view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a tenth embodiment of the present invention.

FIG. 14 is a diagram for explaining a conventional semiconductor manufacturing apparatus. FIG. 14A is a sectional view and FIG. 14B is a sectional view taken along line X14-X14 in FIG. 14A.

* Explanation of symbols for main parts of the drawings

DESCRIPTION OF SYMBOLS 1 Semiconductor manufacturing apparatus 10 Reaction tube main body

12 flange 14 ceiling plate

30: gas shower plate 32: gas dispersion hole

40: upper gas introduction pipe 42: shower room

51: exhaust pipe 60: boat cap

70, 74 ~ 77: Massflow controller 71, 72, 81 ~ 88: valve

73, 91 ~ 94: gas introduction pipe 100: reaction tube

111 ~ 114, 115, 161 ~ 166, 181 ~ 188, 311, 312: gas introduction pipe

121 ~ 124, 321, 322: gas introduction pipe gas introduction part

132, 136: gas supply pipe 134: contact gas pipe

140, 340: gas distribution chamber 141: outer reaction tube

142, 342: ceiling

143, 151 ~ 154, 171 ~ 176, 191 ~ 198

144,344: bottom plate 200: wafer

210: boat 212: boat holder

220: heater 230: crack tube

300: porous material 341: inner reaction tube

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a substrate processing method, and more particularly, to a semiconductor manufacturing apparatus and a substrate processing method for performing processing such as oxidation, diffusion, and heat treatment of a semiconductor wafer.

One of the semiconductor manufacturing apparatuses is a step of forming a thermal oxide film on the surface of a silicon wafer. This process is performed using, for example, the vertical semiconductor manufacturing apparatus shown in Figs. 14A and 14B.

FIG. 14A is a sectional view of a conventional semiconductor manufacturing apparatus 1, and FIG. 14B is a sectional view taken along line X14-X14 in FIG. 14A.

As shown in FIGS. 14A and 14B, in the semiconductor manufacturing apparatus 1, a crack tube 230 is disposed in the hollow heater 220, and the crack tube 230 is provided. An inner reaction tube 100 is arranged. The crack tube 230 is made of a material having a large heat capacity and is used to maintain temperature uniformity in the furnace. The reaction tube 100 includes a reaction tube body 10 having a circular cross section and one gas introduction tube 20. The upper gas introducing pipe 40 is disposed on the ceiling plate 14 above the reaction tube body 10, and the shower chamber 42 is partitioned by the upper gas introducing pipe 40 and the ceiling plate 14. . The ceiling plate 14 in the shower room 42 is a gas shower plate 30 having a plurality of gas dispersion holes 32 formed therein, and the shower room 42 has a reaction tube body (eg, a gas shower plate 30). 10) Communicating inside. The gas introduction pipe 20 is disposed in the vertical direction along the busbar direction on the outer surface of the reaction tube main body 10, and the gas introduction pipe gas introduction part 21 is disposed at the lower end of the upstream side, and downstream. The upper end at the side is in communication with a shower chamber 42 disposed above the reaction tube body 10. The exhaust pipe 50 is arranged in communication with the lower end of the reaction tube main body 10. Gas introduction pipe The gas introduction part 21 is connected to the reaction gas supply source (not shown), and the exhaust pipe 50 is connected with the exhaust apparatus (not shown).

As the boat 210 is elevated by a boat elevator (not shown), it is introduced into the reaction tube body 10 and is withdrawn from the reaction tube body 10. The boat 210 is placed on the boat cap 60, and the boat cap 60 is disposed on the furnace inlet cover 62. A flange 12 is provided around the lower end of the reaction tube body 10, and a zero ring 64 is fitted between the flange 12 and the furnace inlet cover 62 to hermetically seal the reaction tube body 10. Doing.

The boat 210 is provided with four boat holders 212, and a plurality of wafers 200 are loaded in the boat posts 212 in a horizontal posture, and the wafers 200 are mounted on the boat 210. It is oxidized in the charged state and an oxide film is formed on the surface.

When the wafer 200 is oxidized, the oxygen gas is introduced into the shower chamber 42 through the gas introduction pipe 20 while the furnace and the wafer 200 are heated and maintained at the oxidation treatment temperature by the heater 220. ) Is distributed from the shower room 42 into the reaction tube body 10 through the gas distribution holes 32 of the gas shower plate 30. Oxygen gas and the wafer 200 react to form an oxide film on the surface of the wafer 200. The gas after the reaction is exhausted through the exhaust pipe 50.

The length of the reaction gas introduction pipe 20 is about the same length as that in the heater 220 and the crack pipe 230 of the reaction tube body 10. Oxygen gas introduced from the gas introduction tube gas introduction unit 21 at a temperature near room temperature is heated in the middle of passing through the gas introduction tube 20 and reaches the shower room 42. It is considered that the temperature is substantially the same as the temperature of the wafer 200 and introduced into the reaction tube body 10.

However, since the gas introduced from the gas introduction tube gas introduction portion 21 is oxygen gas near the normal temperature, the temperature difference between the furnace and the furnace upstream of the gas introduction tube 20 is larger, and the endothermic amount from the furnace is also larger. Therefore, when oxygen gas is supplied through the integrated gas introducing pipe 20, partial cooling of the wafer 200 near the gas introducing pipe 20 occurs as the upstream side of the gas introducing pipe 20 occurs, in particular, the wafer. This resulted in nonuniformity of in-plane temperature distribution. In addition, since the temperature of the wafer affects the deposition rate of the oxide film, the film thickness nonuniformity of the oxide film in the wafer surface is caused.

Accordingly, a main object of the present invention is to provide a semiconductor manufacturing apparatus and a substrate processing method for improving the uniformity of the temperature distribution in the wafer surface.

According to the invention, the heating means; A reaction tube disposed in the heating means, having a gas introduction portion and an exhaust portion spaced in the longitudinal direction by a predetermined distance and introducing gas into the reaction tube from the gas introduction portion and exhausting the gas in the reaction tube from the double portion; Extends along the side wall of the reaction tube from the exhaust side of the reaction tube to the gas introduction portion and is spaced apart from each other so that the temperature distribution in the direction perpendicular to the longitudinal direction in the reaction tube is uniform; There is provided a semiconductor manufacturing apparatus having a plurality of gas introduction tubes communicating with each of the gas introduction portions and introducing gas into the gas introduction portions by flowing a gas from the exhaust side to the gas introduction portion of the reaction tube.

In this way, by providing a plurality of gas introduction tubes, it is possible to improve the uniformity of the temperature distribution in the reaction tube, particularly in the plane perpendicular to the longitudinal direction.

In addition, since a large number of gas introduction pipes are laid on the reaction tube, the production cost is low, and the weight is not so heavy, and it is easy for the worker to carry them during maintenance.

The semiconductor manufacturing apparatus of the present invention preferably further has substrate supporting means capable of supporting a main surface of the substrate to be processed substantially perpendicularly to the longitudinal direction in the reaction tube.

Preferably, the semiconductor manufacturing apparatus of the present invention is capable of stacking and supporting a plurality of substrates to be processed in the reaction tube in the longitudinal direction, and at the same time, a main surface of each of the plurality of substrates to be processed is formed in the longitudinal direction. It further has a substrate support means substantially supportable at right angles, respectively.

In this way, the temperature distribution uniformity in the substrate surface is improved by supporting the substrate at right angles to the longitudinal direction.

In the semiconductor manufacturing apparatus of the present invention, preferably, the reaction tube has a circular cross section. Such a reaction tube is suitably used when the substrate is a semiconductor wafer.

In this case, preferably, the plurality of gas introduction pipes are disposed substantially equidistantly around the reaction pipe. In this way, the uniformity of the temperature distribution in the substrate surface is improved.

Moreover, in the semiconductor manufacturing apparatus of this invention, you may be provided with the gas supply apparatus which can respectively independently control the flow volume of the gas supplied to the said several gas introduction pipe | tubes. In this case, the amount of gas supplied to the gas introducing pipe toward the region having a higher temperature in the substrate surface can be made larger than that of other gas introducing pipes, so that the temperature distribution in the substrate surface can be made more uniform.

In addition, the semiconductor manufacturing apparatus of the present invention preferably is in communication with each of the gas introduction portion of each of the plurality of gas introduction tube and at the same time communicating with the communication tube and the communication tube disposed along the side wall of the reaction tube. A gas introduction pipe is further provided.

Further, the semiconductor manufacturing apparatus of the present invention is preferably disposed on the exhaust side along the side wall of the reaction tube, and is disposed around the reaction tube along the circumferential surface of the reaction tube and at a predetermined length in the longitudinal direction. A gas distribution chamber having one end in the longitudinal direction communicating with each of the gas introduction sections of the plurality of gas introduction pipes, and the other end of the gas distribution chamber in the longitudinal direction from the one end of the gas distribution chamber. The gas introduction pipe arrange | positioned in communication with the said gas distribution chamber at the position spaced predetermined distance further is provided further.

When the gas distribution chamber is formed in this way, the flow rate of the gas introduced into the plurality of gas introduction pipes becomes uniform between the gas introduction pipes, thereby improving the uniformity of the temperature distribution.

In the semiconductor manufacturing apparatus of this invention, you may arrange | position a porous material in the said gas distribution chamber. In this way, when the porous material is disposed, the gas is further dispersed, and the flow rate of the gas introduced into each of the plurality of gas introduction pipes becomes more uniform between the gas introduction pipes, thereby improving the uniformity of the temperature distribution.

Preferably, the inner diameters of the plurality of gas inlet pipes increase as the distance from the gas inlet pipe increases, and the diameters of the gas outlet holes respectively provided between the plurality of gas inlet pipes and the distribution chamber also move away from the gas supply pipe. So it's growing. This makes the flow rate of the gas flowing in the plurality of gas introduction pipes uniform between the gas introduction pipes, thereby improving the uniformity of the temperature distribution.

Moreover, you may narrow the space | interval of the said many gas introduction pipe as it moves away from the said gas introduction pipe. In this way, the cooling effect by the gas flowing through the plurality of gas introduction pipes is more likely to be more uniform around the reaction pipe, and as a result, the uniformity of the temperature distribution is further improved.

Moreover, you may wind up the said many gas introduction pipe | tube to the side wall of the said reaction pipe | tube. In this way, the influence of cooling by the gas flowing in the plurality of gas introduction pipes can be dispersed, resulting in a more uniform temperature distribution.

It is also preferable that at least one of the plurality of gas introduction tubes and the gas distribution chamber is disposed inside the reaction tube. This facilitates cleaning of the reaction tube and the like.

Preferably, at least a part of the gas distribution chamber is disposed in the heating means. In this way, the gas distribution chamber functions not only as a gas distribution chamber but also as a gas heating chamber for preheating the gas, and the gas supplied to the gas distribution chamber is preheated until it is introduced into the gas introduction pipe. As a result, the cooling effect by the gas flowing in the gas introduction pipe is suppressed.

EMBODIMENT OF THE INVENTION Next, embodiment of this invention is described with reference to drawings.

[First Embodiment]

1A is a cross-sectional view illustrating a semiconductor manufacturing apparatus according to a first embodiment of the present invention, FIG. 1B is a cross-sectional view taken along line X1-X1 of FIG. 1A, and FIG. 2 is a semiconductor manufacturing apparatus according to the first embodiment of the present invention. A partial schematic perspective view for explaining.

In this semiconductor manufacturing apparatus 1, the crack tube 230 in the hollow heater 220 is arrange | positioned, and the reaction tube 100 is arrange | positioned in the crack tube 230. The crack tube 230 is made of a material having a large heat capacity (for example, SiC) and is used to maintain temperature uniformity in the furnace. The reaction tube 100 includes a reaction tube body 10 having a circular cross section and four gas introduction tubes 111 to 114. The upper gas introducing pipe 40 is disposed on the ceiling plate 14 above the reaction tube body 10, and the shower room 42 is partitioned by the upper gas introducing pipe 40 and the ceiling plate 14. The ceiling plate 14 in the shower room 42 is a gas shower plate 30 having a plurality of gas dispersion holes 32 formed therein, and the shower room 42 has a reaction tube body (i) through the gas shower plate 30. 10) Communicating inside. The gas introduction pipes 111 to 114 are disposed at equal intervals of 90 ° along the outer circumferential surface of the reaction tube body 10, and are also perpendicular to the outer surface of the reaction tube body 10 along the busbar direction. The gas introduction pipes 121 and 124 are arranged at lower ends of the upstream side, respectively, and the upper end of the downstream side is arranged around the circumference of the shower chamber 42 disposed above the reaction tube body 10. It communicates with each other in four equal positions. The inner and outer diameters of the gas introduction pipes 111 to 114 are the same as each other. The exhaust pipe 51 is arranged in communication with the lower end of the reaction tube main body 10. Gas introduction pipes The gas introduction parts 121 to 124 are connected to a reaction gas supply source (not shown) through a gas introduction pipe 73, a valve 72, a mass flow controller 70, and a valve 71. 51 is connected to an exhaust device (not shown).

As the boat 210 is elevated by a boat elevator (not shown), it is introduced into the reaction tube main body 10 and is withdrawn from the reaction tube main body 10. The boat 210 is mounted on the boat cap 60, and the boat cap 60 is disposed on the furnace inlet cover 62. A flange 12 is provided around the lower end of the reaction tube body 10, and a zero ring 64 is fitted between the flange 12 and the furnace inlet cover 62 to hermetically seal the reaction tube body 10. Doing.

The boat 210 is provided with four boat holders 212, and a plurality of wafers 200 are loaded in the boat posts 212 in a horizontal posture, and the wafers 200 are mounted on the boat 210. It is oxidized in the charged state so that an oxide film is formed on its surface.

Oxidation of the wafer 200 is performed by the heater 220 in the furnace and the wafer 200 in the state where the heating is maintained at the oxidation treatment temperature, oxygen gas through the gas introduction pipe (111 ~ 114) shower room ( 42 is supplied to the reaction tube body 10 from the shower room 42 through the gas distribution holes 32 of the gas shower plate 30. Oxygen gas and the wafer 200 react to form an oxide film on the surface of the wafer 200. The gas after the reaction is exhausted through the exhaust pipe 51.

The length of the reaction gas introducing pipes 111 to 114 is about the same length as the length of the heater 220 and the crack tube 230 of the reaction tube body 10. Oxygen gas introduced from the gas introducing pipes 121 to 124 at a temperature near the room temperature is heated while passing through the gas introducing pipes 111 to 114, and the reaction tube body is reached by the time of reaching the shower room 42. It is considered that the temperature in (10) and the temperature of the wafer 200 are approximately the same and are introduced into the reaction tube body 10.

In this embodiment, since oxygen gas is supplied by four gas introduction pipes 111 to 114 that are equally disposed around the reaction tube body 10 and have the same inner diameter, the conditions around the reaction tube body 10 are almost equal. As a result, there is no portion to be locally cooled in the plane of the wafer 200, thereby improving the uniformity of the oxide film formed by the thermal oxidation process.

In addition, in the present embodiment, the number of gas introducing pipes into which gas is introduced was four, but the number of gas introducing pipes was increased from one to four by one, and the number of gas introducing pipes and the upstream side of the gas introducing pipe were increased. That is, the relationship between the temperature of the wafer 200 under the boat 210 and the film thickness uniformity of the oxide film formed on the wafer 200 in the upper, middle and lower portions of the boat 210 was investigated. In addition, the temperature of the furnace was set to 800 ° C, and the total amount of oxygen introduced into the reaction tube body 10 from the gas introduction tube was set to a constant term 20 SLM. In addition, the gas introduction pipe was arrange | positioned equally around the reaction tube main body 10. As shown in FIG. The results are shown in Table 1.

TABLE 1

By increasing the number of gas introduction pipes in Table 1, the gas flow rate per unit is reduced, thereby reducing the local temperature drop in the wafer surface, thereby improving the overall uniformity of the film thickness, and in particular, the influence of oxygen gas is remarkable. It can be seen that the film thickness uniformity in the lower region of the boat is improved.

Second Embodiment

3 is a block diagram illustrating a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

In this embodiment, the mass flow controllers 74 to 77 are connected to each of the gas introduction pipes gas introduction parts 121 to 124, and the flow rates of the gas supplied to the gas introduction pipes 111 to 114 can be independently controlled. The point is different from that of the first embodiment, but the other points are the same. In addition, the gas introduction pipe gas introduction part 121 is connected to a gas introduction pipe 92 having a valve 84, a mass flow controller 75, and a valve 83, and the gas introduction pipe gas introduction part 122 is connected to a valve ( 82, a gas introduction pipe 91 having a mass flow controller 74 and a valve 81 is connected, and a valve 88, a mass flow controller 77, and a valve () are connected to the gas introduction pipe gas introduction unit 123. A gas introduction pipe 94 having a 87 is connected, and a gas introduction pipe 93 having a valve 86, a mass flow controller 76, and a valve 85 is connected to the gas introduction pipe gas introduction part 124. Connected.

In this embodiment, since the flow rate of the gas supplied to the gas introduction pipes 111 to 114 can be independently controlled, when the temperature of the wafer 200 is partially high in the wafer surface, for example, the wafer ( When the temperature near the gas introduction pipe 111 of the 200 rises and the film thickness of the portion increases, the gas flow rate of the gas introduction pipe 111 is increased to increase the temperature near the gas introduction pipe 111 of the wafer 200. It can be lowered, and as a result, a thermal oxide film having a uniform film thickness distribution can be formed.

Third Embodiment

4 is a perspective view for explaining a reaction tube used in the semiconductor manufacturing apparatus according to the third embodiment of the present invention.

In this embodiment, the communication gas pipes 134 communicating with the gas introduction parts of the gas introduction pipes 111 to 114 are respectively disposed under the reaction tube main body 10, and one communication gas pipe 134 communicates with the gas introduction pipes 134. Although the point which arrange | positions the gas supply pipe 132 differs from 1st Embodiment, the other point is the same.

Fourth Embodiment

5 is a perspective view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention. FIG. 6a is a cross-sectional view illustrating a semiconductor manufacturing apparatus according to a fourth embodiment of the present invention. 6 is a cross-sectional view taken along line X6-X6 of FIG. 6A, and FIG. 7 is a partially enlarged perspective view for explaining a reaction tube used in the semiconductor manufacturing apparatus according to the fourth embodiment of the present invention.

In the present embodiment, the gas distribution chamber 140 is formed under the reaction tube body 10. The gas distribution chamber 140 is provided around the reaction tube body 10 along the circumferential surface of the reaction tube body 10 and has a length A in the busbar direction of the reaction tube body 10.

Reaction with the reaction tube main body 10, the circumferential outer reaction tube 141 disposed concentrically with the reaction tube main body 10 on the outside of the reaction tube main body 10, and the upper end of the outer reaction tube 141. The gas distribution chamber 140 is partitioned by a ceiling plate 142 disposed between the tube body 10 and a bottom plate 144 disposed between the lower end of the outer reaction tube 141 and the reaction tube body 10. It is.

In the ceiling plate 142, the gas extraction holes 151 to 154 are arranged at equal intervals of 90 degrees. The gas introduction pipes 111 to 114 are also arranged at equal intervals at 90 ° intervals along the circumferential surface of the reaction tube body 10, and are also disposed on the outer circumferential surface of the reaction tube body 10 in the vertical direction along the bus bar direction. have. The lower ends of the gas introduction pipes 111 to 114 are in communication with the gas distribution chamber 140 through the gas discharge holes 151 to 154, respectively. The inner diameters of the gas introduction pipes 111 to 114 are the same as the diameters of the gas introduction holes 151 to 154.

A gas supply pipe 136 is disposed in communication with the gas distribution chamber 140 at the lower end of the outer reaction tube 141 in the lower portion of the gas introduction pipe 111.

Oxygen gas supplied from the gas supply pipe 136 is distributed by the gas distribution chamber 140, and when it reaches the gas discharge holes 151 to 154, the flow rate in these gas discharge holes 151 to 154 becomes substantially uniform. Or nearly the same. In order to make the flow rate of the gas derived from the gas extraction holes 151 to 154 the same, the gas supply pipe 136 determined by the height A and the width B of the gas distribution chamber 140 compared to the resistance of the gas extraction holes 151 to 154. ), It is necessary to sufficiently reduce the resistance from the gas extraction holes 151 to 154.

In addition, when providing the gas distribution chamber 140 in this way, it is preferable to provide in the lower side rather than the position of the wafer 200 mounted in the boat 210. As shown in FIG. By doing in this way, the temperature nonuniformity of a wafer process area | region can be prevented.

In order to function this gas distribution chamber 140 as a gas distribution chamber, it is not necessary to arrange it in the heater 220 or the crack tube 230, and may be provided in the outer side of the lower side of the heater 220 or the crack tube 230. .

In addition, as shown in FIG. 6A, the gas distribution chamber 140 is disposed in the heater 220 and the crack tube 230, so that the gas distribution chamber 140 is not only a gas distribution chamber but also a gas for preheating the gas. It also functions as a heating chamber, and the gas supplied from the gas supply pipe 136 is preheated until it is introduced into the gas introduction pipes 111 to 114. As a result, the cooling effect by the gas flowing in the gas introduction pipes 111-114 is suppressed. In addition, when the gas temperature rises to a temperature substantially equal to the temperature of the furnace and the wafer 200 until it is sufficiently heated by the gas distribution chamber 140 and introduced into the gas introduction pipes 111 to 114. In the gas introduction pipes 111 to 114, the temperature distribution in the surface of the wafer 200 becomes uniform even if the gas introduction pipes 111 to 114 are not necessarily distributed on the outer circumference of the reaction tube body 10, and as a result, the film thickness of the oxide film to be formed is also increased. Becomes uniform in plane. In addition, in order to make the gas distribution chamber 140 also function as a heating chamber, it is preferable to make the height of the gas distribution chamber 140 in the heater 220 and the crack tube 230 about 200-400 mm. In the case where the gas distribution chamber 140 functions as the gas heating chamber in this manner, the gas distribution chamber 140 is preferably provided below the position of the wafer 200 mounted on the boat 210. By doing in this way, the temperature nonuniformity of a wafer process area | region can be prevented.

[Example 5]

FIG. 8A is a partially enlarged perspective view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a fifth embodiment of the present invention, and FIG. 8B is a porous material used in the semiconductor manufacturing apparatus according to a fifth embodiment of the present invention. It is a perspective view for demonstrating.

In this embodiment, the ring-shaped porous material 300 is disposed in the gas distribution chamber 140. In this way, when the gas supplied from the gas supply pipe 136 into the gas distribution chamber 140 is distributed more uniformly, as a result, the flow volume of the gas introduced into the gas introduction pipes 111-114 becomes more uniform.

Sixth Embodiment

9A and 9B are cross-sectional views illustrating reaction tubes used in the semiconductor manufacturing apparatus according to the sixth embodiment of the present invention.

In the present embodiment, eight gas introduction pipes 115 are arranged at equal intervals of 45 ° along the outer circumferential surface of the reaction tube body 10. The gas introduction pipe 115 communicates with the gas distribution chamber 140 through the gas extraction hole 143 provided in the ceiling plate 142. Eight gas extraction holes 143 are provided at equal intervals of 45 ° along the outer circumference of the reaction tube body 10. The inner diameter of the gas introducing pipe 115 and the diameter of the gas extracting hole 143 are the same.

[Example 7]

10A and 10B are cross-sectional views illustrating reaction tubes used in the semiconductor manufacturing apparatus according to the seventh embodiment of the present invention.

In this embodiment, six gas introduction pipes 161 to 166 are arranged at equal intervals of 60 ° along the outer circumferential surface of the reaction tube body 10. The gas introduction pipes 161 to 166 communicate with the gas distribution chamber 140 through the gas extraction holes 171 to 176 provided in the ceiling plate 142. Six gas extraction holes 171 to 176 are provided at equal intervals of 60 degrees along the outer circumference of the reaction tube body 10.

The inner diameter of the gas introduction pipe 161, the inner diameter of the gas introduction pipe 166, and the diameters of the gas introduction holes 171 and 176 are the same. The inner diameter of the gas introduction pipe 162, the inner diameter of the gas introduction pipe 165, and the diameters of the gas introduction holes 172 and 175 are the same. The inner diameter of the gas introducing pipe 163, the inner diameter of the gas introducing pipe 164, and the diameters of the gas introducing holes 173 and 174 are the same.

The inner diameters of the gas introduction pipes 161 to 166 and the diameters of the gas discharge holes 171 to 176 become larger as they move away from the gas supply pipe 136. Therefore, compared to the case where the inner diameters of the gas introduction pipes 161 to 166 are almost the same, and the diameters of the gas discharge holes 171 to 176 are also almost the same, the flow rates of the gas flowing through the gas introduction pipes 161 to 166 are respectively higher. It is more likely to be uniform, and as a result, the temperature distribution in the wafer plane becomes more uniform, thereby improving the uniformity of the wafer in-plane distribution of the oxide film to be developed.

[Example 8]

11A and 11B are cross-sectional views illustrating reaction tubes used in the semiconductor manufacturing apparatus according to the eighth embodiment of the present invention.

In the present embodiment, eight gas introduction pipes 181 to 188 are disposed along the outer circumferential surface of the reaction tube body 10, but as the distance between the gas introduction pipes 181 to 188 increases away from the gas supply pipe 136, Narrows. Accordingly, the cooling effect by the gas flowing in the gas introduction pipes 181 to 188 is more uniform than that around the reaction tube body 10, compared to the case where all the spaces of the gas introduction pipes 181 to 188 are the same. As a result, the temperature distribution in the wafer surface becomes more uniform, and the uniformity of the wafer in-plane distribution of the oxide film formed is further improved.

In addition, the gas introduction pipes 181 to 188 communicate with the gas distribution chamber 140 through the gas extraction holes 191 to 198 provided in the ceiling plate 142, respectively. The intervals of the eight gas extraction holes 191 to 198 also become narrower as they move away from the gas supply pipe 136. In addition, the inner diameters of the gas introduction pipes 181 to 188 and the diameters of the gas discharge holes 191 to 198 are the same.

[Example 9]

12 is a cross-sectional view for explaining a reaction tube used in the semiconductor manufacturing apparatus of the ninth embodiment of the present invention.

In the present embodiment, the reaction tube 100 includes a reaction tube body 10 and two gas introduction tubes 311 and 312. The gas introduction pipes 311 and 312 are spirally wound along the outer circumferential surface of the reaction tube body 10. Gas introduction pipes gas introduction parts 321 and 322 are respectively disposed at the lower end portions upstream of the gas introduction pipes 311 and 312, and upper ends of the gas introduction pipes 311 and 312 are respectively disposed in the upper part of the reaction tube body 10. The circumference of 42) is communicated in two positions. As such, since the gas introduction pipes 311 and 312 are spirally wound along the outer circumferential surface of the reaction tube body 10, the effects of cooling due to the gas flowing in the gas introduction pipes 311 and 312 can be dispersed. As a result, the temperature distribution in the wafer plane becomes more uniform, and the uniformity of the wafer in-plane distribution of the oxide film to be formed is improved.

[Example 10]

13 is a cross-sectional view illustrating a reaction tube used in a semiconductor manufacturing apparatus according to a tenth embodiment of the present invention.

In this embodiment, the gas distribution chamber 340 is provided inside the reaction tube body 10. The gas distribution chamber 340 is installed around the inner side of the reaction tube body 10 along the circumferential surface of the reaction tube body 10 and has a predetermined length in the bus bar direction of the reaction tube body 10. have.

Reaction with the reaction tube main body 10, the inner reaction tube 341 of the columnar shape arranged concentrically with the reaction tube main body 10 inside the reaction tube main body 10, and the upper end of the inner reaction tube 341. The gas distribution chamber 340 is partitioned by a ceiling plate 342 disposed between the tube body 10 and a bottom plate 344 disposed between the lower end of the inner reaction tube 341 and the reaction tube body 10. It is.

The gas introduction pipes 111-114 are arrange | positioned in the ceiling plate 342. The gas introduction pipes 111 to 114 are disposed at equal intervals of 90 ° along the inner circumferential surface of the reaction tube body 10, and are disposed in the vertical direction along the bus bar direction on the inner circumferential surface of the reaction tube body 10, respectively. It is.

Thus, the gas distribution chamber 340 and the gas introduction pipes 111-114 are arrange | positioned inside the reaction tube main body 10, and washing | cleaning of the reaction tube 100 becomes easy. That is, by arranging the gas introduction tubes 111 to 114 inside the reaction tube body 10, the reaction tube 100 is rotated by immersing the sidewall of the reaction tube 100 in a cleaning chemical while supporting the side wall of the reaction tube 100 with a supporting member such as a roller. In the case of cleaning while the gas introduction pipe (111 ~ 114) does not hit or caught the support member, the reaction tube 100 is smoothly rotated, it can also be prevented from being damaged. In addition, when the gas distribution chamber 340 is installed inside the reaction tube main body 10, the step difference between the gas distribution chamber 340 and the reaction tube main body 10 disappears so that the reaction tube 100 rotates smoothly. .

In each of the above embodiments, a predetermined number of gas introduction pipes are arranged, but the number of gas introduction pipes may be two, three, four, or five or more, if necessary, and one gas introduction pipe. A plurality of branches may be branched to allow gas to flow out at equally distributed positions around the gas shower plate 30, or may be introduced directly into the reaction tube body 10 without passing through the gas shower plate 30. In addition, although each of the above embodiments has been described with respect to dry oxidation treatment by oxygen gas, it is similarly effective for various treatments of semiconductor wafers such as wet oxidation, phosphorus diffusion, and various heat treatments by the pyrogenic method.

By arranging a plurality of gas introduction tubes as in the present invention, it is possible to improve the uniformity of the temperature distribution in the reaction tube, particularly in the plane orthogonal to the longitudinal direction.

In addition, since a plurality of gas induction pipes are laid on the reaction tube, the manufacturing cost is low and the weight is not so heavy, so it is easy for the worker to carry them during maintenance.

Claims (16)

A heating means, a gas introducing portion and an exhaust portion disposed in the heating means and spaced a predetermined distance in the longitudinal direction, introducing gas into the reaction tube from the gas introducing portion and exhausting the gas in the reaction tube from the exhaust portion; The tube and each other so as to extend along the side wall of the reaction tube from the exhaust side of the reaction tube to the gas introduction portion, and at the same time the temperature distribution in the direction perpendicular to the longitudinal direction in the reaction tube is uniform. And a plurality of gas introduction pipes which are separated from each other, communicate with each of the gas introduction parts, and allow gas to flow from the exhaust part side of the reaction tube to the gas introduction part and introduce gas into the gas introduction part. Manufacturing equipment. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction tube further includes a substrate supporting means capable of supporting a main surface of the substrate to be processed substantially perpendicularly to the longitudinal direction. 2. The reaction tube according to claim 1, wherein the reaction tube is capable of supporting a plurality of substrates to be stacked in the longitudinal direction therein, and at the same time, a main surface of each of the plurality of substrates to be processed is substantially different from the longitudinal direction. A semiconductor manufacturing apparatus further comprising substrate supporting means each capable of supporting at right angles. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction tube has a circular cross section. The semiconductor manufacturing apparatus according to claim 4, wherein the plurality of gas introduction tubes are disposed at substantially equal intervals around the reaction tube. The semiconductor manufacturing apparatus according to claim 1, further comprising a gas supply device capable of independently controlling the flow rates of the gases respectively supplied to the plurality of gas introduction pipes. The gas supply pipe according to claim 1, further comprising a communication pipe arranged in communication with each of the gas introduction parts of the plurality of gas introduction pipes and arranged along the side wall of the reaction tube, and a gas supply pipe arranged in communication with the communication pipe. The semiconductor manufacturing apparatus characterized by the above-mentioned. The method according to claim 4, wherein the side of the reaction tube is disposed along the side wall of the reaction tube, and is disposed around the reaction tube along the circumferential surface of the reaction tube and has a predetermined length in the longitudinal direction. One end portion in the longitudinal direction is spaced apart from the one end portion of the gas distribution chamber by a predetermined distance toward the other end of the gas distribution chamber from the one end portion of the gas distribution chamber and the gas distribution chamber, respectively. And a gas supply pipe disposed in communication with the gas distribution chamber at the position. The semiconductor manufacturing apparatus according to claim 8, further comprising a porous material disposed in the gas distribution chamber. The internal diameter of the plurality of gas introduction pipes increases as the distance from the gas supply pipe increases, and the diameters of the gas extraction holes respectively provided between the plurality of gas introduction pipes and the distribution chamber also move away from the gas supply pipe. Therefore, the semiconductor manufacturing apparatus characterized in that it becomes large. 9. The semiconductor manufacturing apparatus according to claim 8, wherein the plurality of gas introduction pipe intervals are narrowed away from the gas supply pipe. The semiconductor manufacturing apparatus according to claim 8, wherein the plurality of gas introduction pipes are wound on sidewalls of the reaction tube. The semiconductor manufacturing apparatus according to claim 8, wherein at least one of the plurality of gas introduction tubes and the gas distribution chamber is disposed inside the reaction tube. The semiconductor manufacturing apparatus according to claim 8, wherein at least part of the gas distribution chamber is disposed in the heating means. Heating means; A reaction tube disposed in the heating means and having a gas introduction portion and an exhaust portion spaced apart from each other in a longitudinal direction by the gas introduction portion to introduce gas into the reaction tube and to exhaust the gas in the reaction tube from the exhaust portion; Extends along the side wall of the reaction tube from the exhaust side of the reaction tube to the gas introduction portion and is spaced apart from each other so that the temperature distribution in the direction perpendicular to the longitudinal direction in the reaction tube is uniform; A plurality of gas introduction tubes communicating with each of the gas introduction portions and introducing gas into the gas introduction portions by flowing a gas from the exhaust side to the gas introduction portion of the reaction tube; A substrate processing method for processing a substrate by using a semiconductor manufacturing apparatus having a gas supply device capable of independently controlling a flow rate of gas supplied to each of the plurality of gas introduction pipes, wherein the area of the region having a high in-plane temperature of the substrate is increased. And a gas supply amount to the gas introduction pipe is larger than that to other gas introduction pipes. The semiconductor manufacturing apparatus according to claim 4, wherein the plurality of gas introduction pipes are installed at least 90 ° apart from each other.